HGTG20N60B3D

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40 A, 600 V HGTG20N60B3D www.onsemi.com The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The diode used in anti−parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly developmental type TA49016. G E E C G COLLECTOR (BOTTOM SIDE METAL) Features • • • • • • C 40 A, 600 V at TC = 25°C Typical Fall Time 140 ns at 150°C Short Circuit Rated Low Conduction Loss Hyperfast Anti−Parallel Diode This is a Pb−Free Device TO−247−3LD SHORT LEAD CASE 340CK JEDEC STYLE MARKING DIAGRAM $Y&Z&3&K G20N60B3D $Y &Z &3 &K G20N60B3D = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2001 April, 2020 − Rev. 2 1 Publication Order Number: HGTG20N60B3D/D HGTG20N60B3D ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) Parameter Symbol HGTG20N60B3D Unit Collector to Emitter Voltage BVCES 600 V Collector to Gate Voltage, RGE = 1 MW BVCGR 600 V Collector Current Continuous At TC = 25°C At TC = 110°C IC25 IC110 40 20 A A Average Diode Forward Current at 110°C I(AVG) 20 A ICM 160 A Gate to Emitter Voltage Continuous Collector Current Pulsed (Note 1) VGES ±20 V Gate to Emitter Voltage Pulsed VGEM ±30 V Switching Safe Operating Area at TC = 150°C SSOA 30 A at 600 V PD 165 W 1.32 W/°C Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C TJ, TSTG −40 to 150 °C Maximum Lead Temperature for Soldering Operating and Storage Junction Temperature Range TL 260 °C Short Circuit Withstand Time (Note 2) at VGE = 15 V tSC 4 ms Short Circuit Withstand Time (Note 2) at VGE = 10 V tSC 10 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE = 360 V, TC =125°C, RG = 25 W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Parameter Symbol Collector to Emitter Breakdown Voltage BVCES Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On−State Gate Charge Current Turn−On Delay Time Current Rise Time Current Turn−Off Delay Time ICES VCE(SAT) VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I Test Condition Min Typ Max Unit 600 − − V TC = 25°C − − 250 mA TC = 150°C − − 2.0 mA TC = 25°C − 1.8 2.0 V TC = 150°C − 2.1 2.5 V 3.0 5.0 6.0 V IC = 250 mA, VGE = 0 V VCE = BVCES IC = IC110, VGE = 15 V IC = 250 mA, VCE = VGE VGE = ±20 V − − ±100 nA VCE = 480 V 100 − − A VCE = 600 V 30 − − A IC = IC110, VCE = 0.5 BVCES − 8.0 − V IC = IC110, VCE = 0.5 BVCES VGE = 15 V − 80 105 nC VGE = 20 V − 105 135 nC − 25 − ns − 20 − ns − 220 275 ns − 140 175 ns TC = 150°C, VGE = 15 V, RG = 10 W, L = 45 mH TC = 150°C, ICE = IC110, VCE = 0.8 BVCES, VGE = 15 V, RG = 10 W, L = 100 mH Current Fall Time tfI Turn−On Energy EON − 475 − mJ Turn−Off Energy (Note 3) EOFF − 1050 − mJ Diode Forward Voltage VEC Diode Reverse Recovery Time trr IEC = 20 A − 1.5 1.9 V IEC = 20 A, dIEC/dt = 100 A/ms − − 55 ns IEC = 1 A, dIEC/dt = 100 A/ms − − 45 ns www.onsemi.com 2 HGTG20N60B3D ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) (continued) Parameter Symbol Thermal Resistance RqJC Test Condition Min Typ Max Unit IGBT − − 0.76 °C/W Diode − − 1.2 °C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A) The HGTG20N60B3D was tested per JEDEC standard No. 24−1 Method for Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss. Turn−On losses include diode losses. TYPICAL PERFORMANCE CURVES PULSE DURATION = 250 ms DUTY CYCLE < 0.5%, VCE = 10 V ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 100 80 TC = 150°C 60 TC = 25°C 40 TC = −40°C 20 0 4 6 8 10 VGE, GATE TO EMITTER VOLTAGE (V) 80 VGE = 10 V PULSE DURATION = 250 ms, DUTY CYCLE < 0.5%, TC = 25°C 60 VGE = 9 V VGE = 8.5 V 40 VGE = 8.0 V VGE = 7.5 V 20 VGE = 7.0 V 12 0 2 4 6 8 Figure 2. SATURATION CHARACTERISTICS 100 50 40 VGE = 15 V 30 20 10 25 50 75 100 125 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, DC COLLECTOR CURRENT (A) 12 V VGE = 15 V 0 Figure 1. TRANSFER CHARACTERISTICS 0 100 80 60 TC = −40°C 40 TC = 150°C 20 0 150 TC = 25°C PULSE DURATION = 250 ms DUTY CYCLE < 0.5%, VGE = 15 V 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 3. DC COLLECTOR CURRENT vs. CASE TEMPERATURE Figure 4. COLLECTOR TO EMITTER ON−STATE VOLTAGE www.onsemi.com 3 5 HGTG20N60B3D FREQUENCY = 1 MHz C IES 4000 VCE, COLLECTOR TO EMITTER VOLTAGE (V) C, CAPACITANCE (pF) 5000 3000 2000 C OES 1000 C RES 0 0 5 10 15 20 15 600 480 360 9 VCE = 400 V 240 TC = 25°C Ig(REF) = 1.685 mA RL = 30 W 120 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) td(OFF)I, TURN−OFF DELAY TIME (ns) td(ON)I, TURN−ON DELAY TIME (ns) 50 40 VCE = 480 V, VGE = 15 V 20 10 0 10 20 40 30 500 60 80 0 100 TJ = 150°C, RG = 10 W, L = 100 mH 400 300 VCE = 480 V, VGE = 15 V 200 100 0 ICE, COLLECTOR TO EMITTER CURRENT (A) 10 20 30 40 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 7. TURN−ON DELAY TIME vs. COLLECTOR TO EMITTER CURRENT Figure 8. TURN−OFF DELAY TIME vs. COLLECTOR TO EMITTER CURRENT 1000 100 TJ = 150°C, RG = 10 W, L = 100 mH TJ = 150°C, RG = 10 W, L = 100 mH TfI, FALL TIME (ns) trI, TURN−ON RISE TIME (ns) 40 Figure 6. GATE CHARGE WAVEFORMS TJ = 150°C, RG = 10 W, L = 100 mH 30 20 3 QG, GATE CHARGE (nC) Figure 5. CAPACITANCE vs. COLLECTOR TO EMITTER VOLTAGE 100 6 VCE = 200 V 0 25 12 VCE = 600 V VCE = 480 V, VGE = 15 V 10 1 0 10 20 30 10 40 VCE = 480 V, VGE = 15 V 100 0 ICE, COLLECTOR TO EMITTER CURRENT (A) 10 20 30 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 9. TURN−ON RISE TIME vs. COLLECTOR TO EMITTER CURRENT Figure 10. TURN−OFF FALL TIME vs. COLLECTOR TO EMITTER CURRENT www.onsemi.com 4 40 VGE, GATE TO EMITTER VOLTAGE (V) TYPICAL PERFORMANCE CURVES (continued) HGTG20N60B3D EOFF, TURN−OFF ENERGY LOSS (mJ) EON, TURN−ON ENERGY LOSS (mJ) TYPICAL PERFORMANCE CURVES (continued) 1400 TJ = 150°C, RG = 10 W, L = 100 mH 1200 1000 800 VCE = 480 V, VGE = 15 V 600 400 200 0 0 10 20 30 40 2500 TJ = 150°C, RG = 10 W, L = 100 mH 2000 1500 1000 500 0 0 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) fMAX, OPERATING FREQUENCY (kHz) TJ = 150°C, TC = 75°C, VGE = 15 V RG = 10 W, L = 100 mH 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD − PC) / (EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RqJC = 0.76°C/W 10 5 20 30 120 40 TC = 150°C, VGE = 15 V, RG = 10 W 80 60 40 20 0 40 0 100 200 300 400 500 600 700 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 13. OPERATING FREQUENCY vs. COLLECTOR TO EMITTER CURRENT ZqJC, NORMALIZED THERMAL RESPONSE 30 100 ICE, COLLECTOR TO EMITTER CURRENT (A) 100 20 Figure 12. TURN−OFF ENERGY LOSS vs. COLLECTOR TO EMITTER CURRENT VCE = 480 V 10 10 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 11. TURN−ON ENERGY LOSS vs. COLLECTOR TO EMITTER CURRENT 500 VCE = 480 V, VGE = 15 V Figure 14. SWITCHING SAFE OPERATING AREA 0.5 0.2 10−1 0.1 0.05 0.02 10−2 t1 PD 0.01 t2 SINGLE PULSE 10−3 10−5 10−4 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD x ZqJC x RqJC) + TC 10−3 10−2 10−1 100 t1, RECTANGULAR PULSE DURATION (s) Figure 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE www.onsemi.com 5 101 HGTG20N60B3D TYPICAL PERFORMANCE CURVES (continued) 50 tr, RECOVERY TIMES (ns) IEC, FORWARD CURRENT (A) 100 80 150°C 60 100°C 40 20 0 0 25°C 0.5 1.0 1.5 2.0 40 TC = 25°C, dIEC/dt = 100 A/ms trr 30 ta 20 tb 10 0 2.5 1 VEC, FORWARD VOLTAGE (V) 5 10 Figure 16. DIODE FORWARD CURRENT vs. FORWARD VOLTAGE DROP Figure 17. RECOVERY TIMES vs. FORWARD CURRENT TEST CIRCUIT AND WAVEFORMS 90% L = 100 mH RHRP3060 10% VGE EOFF EON VCE RG = 10 W 90% + − 20 VEC, FORWARD CURRENT (A) VDD = 480 V 10% ICE t d(OFF)I t fI t rI t d(ON)I Figure 18. INDUCTIVE SWITCHING TEST CIRCUIT Figure 19. SWITCHING TEST WAVEFORMS www.onsemi.com 6 HGTG20N60B3D OPERATING FREQUENCY INFORMATION Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (td(OFF)I td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on− state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn−off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD − PC) / (EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM − TC) / RqJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE) / 2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn−on and EOFF is the integral of the instantaneous power loss during turn−off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). HANDLING PRECAUTIONS FOR IGBTs Insulated Gate Bipolar Transistors are susceptible to gate−insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and discharge procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBDt LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means − for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. 1. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating − Never exceed the gate−voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination − The gates of these devices are essentially capacitors. Circuits that leave the gate open− circuited or floating should be avoided. These conditions can result in turn−on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. ORDERING INFORMATION Part Number HGTG20N60B3D NOTE: Package Brand Shipping TO−247 G20N60B3D 450 Units / Tube When ordering, use the entire part number. All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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