MMBTH10M3T5G

MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features http://onsemi.com • Reduces Board Space • This is a Halide−Free Device • This is a Pb−Free Device MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc 1 BASE COLLECTOR 3 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 265 2.1 RqJA PD 470 640 5.1 RqJA TJ, Tstg 195 − 55 to +150 Unit mW mW/°C 1 3 MARKING DIAGRAM SOT−723 CASE 631AA STYLE 1 AJ M 2 °C/W mW mW/°C °C/W °C AJ M = Specific Device Code = Date Code ORDERING INFORMATION Device MMBTH10M3T5G Package Shipping† Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. SOT−723 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 January, 2009 − Rev. 0 1 Publication Order Number: MMBTH10M3/D MMBTH10M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 100 μAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 μAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) Collector−Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) Base−Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Common−Base Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Collector Base Time Constant (IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) fT Ccb Crb rb′Cc MHz 650 − − − − − − − − 0.7 0.65 9.0 pF pF ps hFE VCE(sat) VBE − 60 − − − − − − 0.5 0.95 Vdc Vdc V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 − − − − − − − − − − 100 100 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit http://onsemi.com 2 MMBTH10M3T5G TYPICAL CHARACTERISTICS COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) yib, INPUT ADMITTANCE 80 y ib , INPUT ADMITTANCE (mmhos) 70 60 - bib jb ib (mmhos) 50 40 30 20 10 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 - 50 - 60 - 20 1000 MHz - 30 - 40 700 400 200 100 gib 0 - 10 0 10 20 30 40 50 gib (mmhos) 60 70 80 Figure 1. Rectangular Form Figure 2. Polar Form yfb, FORWARD TRANSFER ADMITTANCE y ib , FORWARD TRANSFER ADMITTANCE (mmhos) 70 60 50 40 30 20 10 0 - 10 - 20 - 30 10 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 70 60 50 40 30 20 10 gfb (mmhos) 0 - 10 - 20 - 30 20 jb fb (mmhos) - gfb 40 bfb 50 100 60 200 400 600 700 30 1000 MHz Figure 3. Rectangular Form Figure 4. Polar Form http://onsemi.com 3 MMBTH10M3T5G TYPICAL CHARACTERISTICS COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) yrb, REVERSE TRANSFER ADMITTANCE y rb , REVERSE TRANSFER ADMITTANCE (mmhos) 5.0 0 100 4.0 MPS H11 jb rb (mmhos) - 1.0 200 3.0 -brb 2.0 MPS H10 -brb - 2.0 400 - 3.0 700 1.0 - 4.0 -grb 1000 MHz 700 1000 - 5.0 -2.0 -1.8 -1.2 -0.8 -0.4 0.4 0 grb (mmhos) 0.8 1.2 1.6 2.0 0 100 200 300 400 500 f, FREQUENCY (MHz) Figure 5. Rectangular Form yob, OUTPUT ADMITTANCE 10 yob, OUTPUT ADMITTANCE (mmhos) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 gob 0 0 2.0 2.0 100 bob jb ob(mmhos) 6.0 8.0 700 10 Figure 6. Polar Form 1000 MHz 4.0 400 200 4.0 6.0 gob (mmhos) 8.0 10 Figure 7. Rectangular Form Figure 8. Polar Form http://onsemi.com 4 MMBTH10M3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− b1 D 3 1 2 A −Y− E b 2X 0.08 (0.0032) X Y L C HE e STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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