NGTB40N60IHLWG

NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 40 A, 600 V VCEsat = 2.0 V Eoff = 0.4 mJ Features • • • • • Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices C Typical Applications • Inductive Heating • Soft Switching G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 200 Gate−emitter voltage VGE $20 Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 80 40 200 A G C TO−247 CASE 340AL E A 80 40 A MARKING DIAGRAM V W 250 50 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 40N60IHL AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB40N60IHLWG © Semiconductor Components Industries, LLC, 2012 September, 2016 − Rev. 1 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB40N60IHLW/D NGTB40N60IHLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.87 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.46 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 150°C VCEsat − − 2.0 2.6 2.4 − V VGE = VCE, IC = 150 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 3100 − pF Coes − 120 − Cres − 80 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 40 A, VGE = 15 V Gate to collector charge nC Qg 130 Qge 29 Qgc 67 td(on) 70 tr 40 td(off) 140 tf 70 Eoff 0.4 mJ td(on) 70 ns tr 40 td(off) 140 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V Turn−off switching loss Turn−on delay time Rise time Turn−off delay time Fall time TJ = 150°C VCC = 400 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V ns tf 90 Eoff 0.8 VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 150°C VF 1.3 1.35 TJ = 25°C IF = 40 A, VR = 200 V diF/dt = 200 A/ms trr 400 ns Qrr 5500 nc Irrm 25 A Turn−off switching loss mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current 1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB40N60IHLWG TYPICAL CHARACTERISTICS 140 TJ = 25°C VGE = 17 V to 15 V 120 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 140 13 V 100 80 60 11 V 40 10 V 20 9V 7 V to 8 V 0 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 150°C 120 VGE = 17 V to 13 V 100 80 60 11 V 10 V 40 9V 20 8V 7V 0 8 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 140 TJ = −55°C 140 VGE = 17 V to 13 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 120 100 80 60 11 V 40 10 V 20 9V 7 V to 8 V 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) 0 0 120 100 TJ = 25°C 80 TJ = 150°C 60 40 20 0 8 0 Figure 3. Output Characteristics 4 8 12 VGE, GATE−EMITTER VOLTAGE (V) 16 Figure 4. Typical Transfer Characteristics 4.50 10000 4.00 Cies IC = 80 A 3.50 CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 8 3.00 IC = 40 A 2.50 2.00 IC = 20 A 1.50 IC = 5 A 1.00 1000 100 Coes Cres 0.50 0 −75 −25 25 75 125 175 10 0 10 20 30 40 50 60 70 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 90 100 NGTB40N60IHLWG TYPICAL CHARACTERISTICS 20 TJ = 25°C 80 40 20 0 0.5 1 1.5 2 15 VCE = 480 V 10 5 0 2.5 VF, FORWARD VOLTAGE (V) 40 60 80 100 QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 20 0 120 140 1000 1.2 VCE = 400 V VGE = 15 V IC = 40 A Rg = 10 W 1 SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ) TJ = 150°C 60 0 0.8 0.6 0.4 td(off) 100 tf td(on) tr 10 VCE = 400 V VGE = 15 V IC = 40 A Rg = 10 W 0.2 1 0 0 Eoff, TURN−OFF SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 100 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 2.5 160 1000 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 2 SWITCHING TIME (ns) IF, FORWARD CURRENT (A) 120 1.5 1 0.5 0 tf 100 td(off) td(on) tr 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 1 4 16 28 40 52 64 76 88 4 20 32 44 56 68 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. Temperature www.onsemi.com 4 80 NGTB40N60IHLWG 1000 1.6 VCE = 400 V VGE = 15 V IC = 40 A TJ = 150°C 1.4 1.2 SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ) TYPICAL CHARACTERISTICS 1 0.8 0.6 0.4 td(off) tf 100 td(on) tr 10 VCE = 400 V VGE = 15 V IC = 40 A TJ = 150°C 0.2 0 1 15 5 25 35 45 55 65 75 5 85 35 45 55 65 75 Figure 13. Switching Loss vs. RG Figure 14. Switching Time vs. RG 85 1000 1.2 SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ) 25 RG, GATE RESISTOR (W) 1.4 1 0.8 0.6 0.4 VGE = 15 V IC = 40 A RG = 10 W TJ = 150°C 0.2 0 175 225 275 325 375 425 475 td(off) tf 100 td(on) tr 10 1 175 525 575 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE VGE = 15 V IC = 40 A RG = 10 W TJ = 150°C 225 275 325 375 425 475 525 575 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 16. Switching Time vs. VCE 1000 1000 50 ms 100 10 dc operation IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 15 RG, GATE RESISTOR (W) 100 ms 1 ms 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 100 10 VGE = 15 V, TC = 125°C 0.01 1 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 18. Reverse Bias Safe Operating Area Figure 17. Safe Operating Area www.onsemi.com 5 NGTB40N60IHLWG TYPICAL CHARACTERISTICS 1 50% Duty Cycle RqJC = 0.87 20% R(t) (°C/W) 0.1 10% Junction R1 R2 Rn C2 Cn Case 2% Ci = ti/Ri 0.01 1% C1 Single Pulse 0.001 0.000001 ti (sec) Ri (°C/W) 5% 0.00001 0.04077 0.09054 0.16141 0.21558 0.24842 1.0E−4 5.48E−5 0.002 0.03 0.1 0.11759 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance 10 RqJC = 1.46 R(t) (°C/W) 1 0.1 50% Duty Cycle 20% 10% 5% Junction R1 2% 0.01 Rn Ci = ti/Ri 1% C1 0.00001 C2 Cn Case Ri (°C/W) 0.18019 0.37276 0.45472 0.33236 0.11759 ti (sec) 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 R2 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 20. Diode Transient Thermal Impedance www.onsemi.com 6 10 100 1000 NGTB40N60IHLWG Figure 21. Test Circuit for Switching Characteristics www.onsemi.com 7 NGTB40N60IHLWG Figure 22. Definition of Turn On Waveform www.onsemi.com 8 NGTB40N60IHLWG Figure 23. Definition of Turn Off Waveform www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative