NSVT30010MXV6T1G

NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http://onsemi.com These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; Mixers; Detectors and Limiters. SOT−563 CASE 463A PLASTIC Features       Current Gain Matching to 10% Base−Emitter Voltage Matched to 2 mV Drop−In Replacement for Standard Device AEC−Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −30 V Collector −Base Voltage VCBO −30 V Emitter −Base Voltage VEBO −5.0 V IC −100 mAdc Collector Current − Continuous Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (3) (2) (1) Q1 Q2 (4) (5) (6) MARKING DIAGRAMS UU M G G 1 UU = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NST30010MXV6T1G SOT−563 (Pb−Free) 4,000 / Tape & Reel NSVT30010MXV6T1G SOT−563 4,000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 1 1 Publication Order Number: NST30010MXV6/D NST30010MXV6T1G, NSVT30010MXV6T1G THERMAL CHARACTERISTICS Characteristic Parameter Symbol Total Device Dissipation, TA = 25C (Note 1) Derate above 25C (Note 1) TA = 25C (Note 2) Derate above 25C (Note 2) Two Devices Heated Total Package PD Thermal Resistance Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) One Heated Device RqJA Thermal Resistance Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Unheated Device Heated by Heated Device YJA Thermal Resistance Junction-to-Lead (Note 1) Junction-to-Lead (Note 2) Lead Attached to Heated Device YJL Thermal Resistance Junction-to-Lead (Note 1) Junction-to-Lead (Note 2) Heated Device Heating Lead Attached to Unheated Device YJL Junction and Storage Temperature Range One Device Heated Both Devices Heated Unit 357 2.9 429 3.4 500 (250 ea) 4.0 661 (331 ea) 5.3 mW mW/C mW mW/C 350 291 250 189 149 88 − − 128 152 76 85 224 222 − − TJ, Tstg C/W C/W C/W C/W C −55 to +150 1. PCB with 51 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB 76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51. 2. PCB with 250 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB 76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO −30 − − V Collector −Emitter Breakdown Voltage, (IC = −10 mA, VEB = 0) V(BR)CES −30 − − V Collector −Base Breakdown Voltage, (IC = −10 mA) V(BR)CBO −30 − − V Emitter −Base Breakdown Voltage, (IE = −1.0 mA) V(BR)EBO −5.0 − − V ICBO − − − − −15 −4.0 nA mA 270 420 0.9 − 520 1.0 − 800 − − − − − −0.30 −0.60 − − −0.75 −0.90 − − VBE(1) − VBE(2) −0.60 − − − − 1.0 −0.75 −0.82 2.0 mV fT 100 − − MHz Output Capacitance, (VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF Noise Figure, (IC = −0.2 mA, VCE = −5 Vdc, RS = 2 kW, f = 1 kHz, BW = 200Hz) NF − − 10 dB OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage, (IC = −10 mA) Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150C) ON CHARACTERISTICS hFE DC Current Gain (IC = −10 mA, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) (Note 3) hFE(1)/hFE(2) Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −1.0 mA) (IC = −100 mA, IB = −10 mA) VBE(sat) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) (Note 4) VBE(on) − V V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product, (IC = −10 mA, VCE = −5 Vdc, f = 100 MHz) 3. hFE(1)/hFE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller hFE is used as numerator. 4. VBE(1) − VBE(2) is the absolute difference of one transistor compared to the other transistor within the same package. http://onsemi.com 2 NST30010MXV6T1G, NSVT30010MXV6T1G TYPICAL CHARACTERISTICS 4.0 IC/IB = 10 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.25 0.20 150C 0.15 25C 0.10 −55C 0.05 0 0.1 1.0 10 100 IC/IB = 100 3.5 3.0 150C 2.5 2.0 1.5 25C 1.0 0.5 0 −55C 0.1 1.0 IC, COLLECTOR CURRENT (mA) Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1.2 1400 IC/IB = 10 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1200 150C (5.0 V) 1000 800 150C (2.0 V) 400 25C (5.0 V) 25C (2.0 V) 200 0 0.1 −55C (5.0 V) −55C (2.0 V) 1.0 10 −55C 0.8 25C 0.6 150C 0.4 0.2 1.0 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current 3.0 VCE, COLLECTOR−EMITTER VOLTAGE (V) 50 mA 0.9 −55C 0.8 0.7 25C 0.6 0.5 150C 0.4 0.3 0.2 0.1 0 0.1 1.0 0 0.1 100 1.0 VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 100 IC, COLLECTOR CURRENT (mA) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 600 10 IC = 100 mA 2.5 2.0 20 mA 1.5 10 mA 1.0 0.5 VCE = −5.0 V 1.0 10 100 0 0.01 IC, COLLECTOR CURRENT (mA) 0.1 1.0 10 IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region @ 255C http://onsemi.com 3 100 NST30010MXV6T1G, NSVT30010MXV6T1G TYPICAL CHARACTERISTICS 7 12 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 14 Cibo (pF) 10 8 6 4 2 0 0 1 2 3 4 5 6 5 4 3 2 1 0 6 Cobo (pF) 0 5 10 15 20 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance http://onsemi.com 4 25 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE H 6 1 SCALE 4:1 DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD DATE 26 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOT−563, 6 LEAD CASE 463A ISSUE H DATE 26 JAN 2021 GENERIC MARKING DIAGRAM* XX MG 1 XX = Specific Device Code M = Month Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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