NTK3134NT5G

NTK3134N MOSFET – Power, Single, N-Channel with ESD Protection, SOT-723 20 V, 890 mA www.onsemi.com Features • • • • • N−Channel Switch with Low RDS(on) 44% Smaller Footprint and 38% Thinner than SC89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS 20 V ID Max 890 mA 0.26 W @ 2.5 V 790 mA 0.43 W @ 1.8 V 700 mA 0.56 W @ 1.5 V 200 mA SOT−723 (3−LEAD) Applications • • • • RDS(on) TYP 0.20 W @ 4.5 V 3 Load/Power Switching Interface Switching Logic Level Shift Battery Management for Ultra Small Portable Electronics MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V ID 890 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 640 t≤5s TA = 25°C 990 Steady State TA = 25°C PD t≤5s Continuous Drain Current (Note 2) Steady State Power Dissipation (Note 2) Pulsed Drain Current ID TA = 85°C TA = 25°C tp = 10 ms Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8” from case for 10 s) mW 450 May, 2019 − Rev. 4 Top View 1 − Gate 2 − Source 3 − Drain KF M SOT−723 CASE 631AA STYLE 5 mA 750 1 KF M = Specific Device Code = Date Code 540 PD 310 mW IDM 1.8 A TJ, TSTG −55 to 150 °C TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface mounted on FR4 board using the minimum recommended pad size © Semiconductor Components Industries, LLC, 2014 2 MARKING DIAGRAM 550 TA = 25°C 1 1 ORDERING INFORMATION Device Package Shipping† NTK3134NT1G SOT−723 4000 / Tape & Reel NTK3134NT5G SOT−723 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTK3134N/D NTK3134N THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 280 °C/W Junction−to−Ambient – t = 5 s (Note 3) RqJA 228 Junction−to−Ambient – Steady State Minimum Pad (Note 4) RqJA 400 3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface mounted on FR4 board using the minimum recommended pad size MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, Reference to 25°C Zero Gate Voltage Drain Current IDSS Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Gate−to−Source Leakage Current VGS = 0 V, VDS = 16 V V 18 mV/°C TJ = 25°C 1.0 TJ = 125°C 2.0 IGSS VDS = 0 V, VGS = ±4.5 V VGS(TH) VGS = VDS, ID = 250 mA ±0.5 mA mA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance 0.45 1.2 2.4 gFS V mV/°C VGS = 4.5 V, ID = 890 mA 0.20 0.35 VGS = 2.5 V, ID = 780 mA 0.26 0.45 VGS = 1.8 V, ID = 700 mA 0.43 0.65 VGS = 1.5 V, ID = 200 mA 0.56 1.2 VDS = 10 V, ID = 800 mA 1.6 VGS = 0 V, f = 1 MHz, VDS = 16 V 79 120 W S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS 13 20 Reverse Transfer Capacitance CRSS 9.0 15 pF SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn On Delay Time Rise Time TurnOff Delay Time Fall Time td(ON) tr VGS = 4.5 V, VDS = 10 V, ID = 500 mA, RG = 10 W ns 6.7 4.8 td(OFF) 17.3 tf 7.4 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR VGS = 0 V, IS = 350 mA TJ = 25°C VGS = 0 V, dISD/dt = 100 A/ms, IS = 1.0 A, VDD = 20 V 0.75 8.1 Charge Time ta Discharge Time tb 1.7 QRR 3.0 Reverse Recovery Charge 1.2 V ns 6.4 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width = 300 ms, duty cycle = 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 NTK3134N TYPICAL CHARACTERISTICS 2.0 2.0 V VDS ≥ 5 V VGS = 4.5 V to 2.2 V 1.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 2.0 1.8 V TJ = 25°C 1.0 1.6 V 1.5 V 0.5 1.5 1.0 TJ = 25°C 0.5 TJ = 125°C 1.4 V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 6 1.25 1.5 1.75 Figure 2. Transfer Characteristics ID = 0.89 A TJ = 25°C 1.00 0.75 0.50 0.25 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE VOLTAGE (V) 2.0 0.30 TJ = 25°C 0.28 0.25 VGS = 2.5 V 0.23 0.20 VGS = 4.5 V 0.18 0.15 0.3 0.6 0.8 1.1 1.3 1.6 1.8 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 0.6 VGS = 0 V VGS = 1.5 V, ID = 200 mA 0.5 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.0 Figure 1. On−Region Characteristics 1.25 1 0.75 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.50 0 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 0.4 VGS = 2.5 V, ID = 710 mA 0.3 TJ = 150°C 1000 VGS = 1.8 V, ID = 710 mA TJ = 125°C 100 0.2 0.1 −60 −35 VGS = 4.5 V, ID = 1 A −10 15 40 65 90 10 140 115 5.0 10 15 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 20 NTK3134N TYPICAL CHARACTERISTICS 140 100 120 100 t, TIME (ns) Ciss 80 60 td(off) 10 td(on) tr 40 0 tf Coss 20 Crss 0 2 4 6 8 10 12 14 16 18 1 20 1 10 100 DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance 1.0 150°C VGS = 0 V 0.9 IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) VDD = 10 V ID = 500 mA VGS = 4.5 V VGS = 0 V TJ = 25°C 0.8 125°C 25°C 0.7 0.6 0.5 0.4 0.3 TJ = −55°C 0.2 0.1 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current www.onsemi.com 4 1.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L GENERIC MARKING DIAGRAM* L2 BOTTOM VIEW STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M 1 XX M RECOMMENDED SOLDERING FOOTPRINT* = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 2X 0.40 2X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12989D SOT−723 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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