NTMFS020N06CT1G

MOSFET- Power, Single N-Channel, SO8FL 60 V, 19.6 mW, 28 A NTMFS020N06C Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 60 V 19.6 mW @ 10 V 28 A • Power Tools, Battery Operated Vacuums • UAV/Drones, Material Handling • BMS/Storage, Home Automation D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit G (4) Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V S (1,2,3) ID 28 A N−CHANNEL MOSFET Continuous Drain Current RqJC (Notes 1, 3) Steady State Power Dissipation RqJC (Note 1) Steady State TC = 25°C TC = 100°C TC = 25°C 19 PD TC = 100°C TA = 25°C Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TA = 100°C Power Dissipation RqJA (Notes 1, 2) Steady State TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms TA = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL = 5.6 Apk) Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) 31 MARKING DIAGRAM W 15 ID 9 D A S SO−8 FLAT LEAD S CASE 488AA S STYLE 1 G 6 PD 3.4 W 1 1.7 IDM 181 A TJ, TSTG −55 to +175 °C IS 25 A EAS 15 mJ TL 260 °C D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION Device Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. D 20N06C AYWZZ Package NTMFS020N06CT1G SO−8 FL (Pb−Free) Shipping† 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction−to−Case – Steady State (Note 2) RqJC 4.8 °C/W Junction−to−Ambient – Steady State (Note 2) RqJA 43.2 © Semiconductor Components Industries, LLC, 2020 January, 2020 − Rev. 0 1 Publication Order Number: NTMFS020N06C/D NTMFS020N06C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, VDS = 60 V V 29 mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V 100 mA nA ON CHARACTERISTICS (Note 4) VGS(TH) VGS = VDS, ID = 20 mA VGS(TH)/TJ ID = 20 mA, ref to 25°C −7.8 RDS(on) VGS = 10 V, ID = 4 A 16.3 Forward Transconductance gFS VDS = 5 V, ID = 4 A 12 S Gate Resistance RG TA = 25°C 1.0 W Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance 2.0 4.0 V mV/°C 19.6 mW CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS 355 Reverse Transfer Capacitance CRSS 4.9 Total Gate Charge QG(TOT) 5.8 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 0 V, f = 1 MHz, VDS = 30 V VGS = 10 V, VDS = 30 V, ID = 4 A 260 pF 1.4 nC 2.3 0.53 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 6.5 VGS = 10 V, VDS = 30 V, ID = 4 A, RG = 6 W tf 1.4 ns 9.7 4.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.81 TJ = 125°C 0.67 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 4 A 1.2 V 24 VGS = 0 V, dIS/dt = 100 A/ms, VDS = 30 V, IS = 4 A QRR 12 ns 12 12 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS020N06C TYPICAL CHARACTERISTICS 70 35 VGS = 10 V to 7 V 30 50 6.0 V 40 30 5.0 V 20 4.5 V 10 3.6 V 20 15 TJ = −55°C 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 TJ = 25°C 0 19 18 17 16 7.5 7.0 8.0 8.5 9.0 9.5 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 20 3.0 2.5 3.5 4.5 5.0 4.0 19 18 VGS = 10 V 17 16 15 14 4 16 20 24 32 28 ID, DRAIN CURRENT (A) TJ = 175°C 10K 1.5 1.0 0.5 TJ = 150°C 1K TJ = 125°C 100 TJ = 85°C 10 TJ = 25°C 1 0 12 100K VGS = 10 V ID = 4 A −25 8 Figure 4. On−Resistance vs. Drain Current and Gate Voltage IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 2.0 TJ = 25°C Figure 3. On−Resistance vs. Gate−to−Source Voltage 0 −50 1.5 Figure 2. Transfer Characteristics 20 2.0 1.0 Figure 1. On−Region Characteristics TJ = 25°C ID = 4 A 2.5 0.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 21 6.5 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 22 15 25 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 60 25 50 75 100 125 150 175 0.1 5 15 25 35 45 55 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTMFS020N06C C, CAPACITANCE (pF) 10K 1K CISS COSS 100 10 1 VGS = 0 V TJ = 25°C f = 1 MHz 0 10 CRSS 20 30 40 50 60 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 10 9 8 7 6 QGD QGS 5 4 3 VDS = 30 V ID = 4 A TJ = 25°C 2 1 0 0 2 1 4 3 5 7 6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 100 IS, SOURCE CURRENT (A) t, TIME (ns) VGS = 0 V td(off) 10 td(on) tf 1 0.1 tr VGS = 10 V VDS = 30 V ID = 4 A 1 10 1 0.1 100 TJ = 125°C 0.3 0.4 TJ = −55°C TJ = 25°C 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 10 ms 100 ms 10 TA = 25°C Single Pulse VGS ≤ 10 V 1 0.1 IPEAK (A) ID, DRAIN CURRENT (A) 100 RDS(on) Limit Thermal Limit Package Limit 1 TJ(initial) = 25°C 10 1 ms 100 ms & 1 sec 10 TJ(initial) = 100°C 10 ms 1 100 0.000001 0.00001 0.0001 0.001 0.01 VDS, DRAIN−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTMFS020N06C TYPICAL CHARACTERISTICS 10 ZqJA (°C/W) 50% Duty Cycle 1 20% 10% 5% 2% 0.1 1% Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 PULSE TIME (sec) Figure 13. Thermal Response www.onsemi.com 5 0.01 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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