NVBLS1D7N08H

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Other names and brands may be claimed as the property of others. MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 mW, 241.3 A NVBLS1D7N08H Features • • • • • Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable Lowers Switching Noise/EMI These Devices are Pb−Free and are RoHS Compliant www.onsemi.com MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State Pulsed Drain Current Value Unit VDSS 80 V VGS ±20 V ID 241.3 A TC = 100°C TC = 25°C 170.6 PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1, 2) Symbol Steady State ID PD 241.3 A D N−CHANNEL MOSFET W 4.4 2.2 900 A TJ, Tstg −55 to +175 °C IS 197.9 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 21 A) EAS 1172 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) 1.7 mW @ 10 V S IDM Operating Junction and Storage Temperature Range 80 V 23.3 TA = 100°C TA = 25°C, tp = 10 ms ID MAX W A 33 RDS(ON) MAX G 118.7 TA = 100°C TA = 25°C 237.5 V(BR)DSS Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TOLL CASE 100CU MARKING DIAGRAM AYWWZZ 1D7N08H THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State (Note 1) Parameter RqJC 0.63 °C/W Junction−to−Ambient − Steady State (Notes 1, 2) RqJA 33.8 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2018 January, 2021 − Rev. 1 1 A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability 1D7N08H = Specific Device Code ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NVBLS1D7N08H/D NVBLS1D7N08H ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 57 VGS = 0 V, VDS = 80 V mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 479 mA VGS(TH)/TJ ID = 479 mA, ref to 25°C 100 mA nA ON CHARACTERISTICS Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance RDS(on) VGS = 10 V gFS ID = 80 A VDS =5 V, ID = 80 A 2.0 2.9 4.0 −7.3 1.29 V mV/°C 1.7 271 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS 7675 Output Capacitance COSS Reverse Transfer Capacitance CRSS 41 Total Gate Charge QG(TOT) 121 Threshold Gate Charge QG(TH) 19 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 29 Plateau Voltage VGP 4.5 td(ON) 29 VGS = 0 V, f = 1 MHz, VDS = 40 V VGS = 10 V, VDS = 40 V; ID = 80 A 1059 pF nC 32 V SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 40 V, ID = 80 A, RG = 6 W tf 25 ns 89 35 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 80 A TJ = 25°C 0.82 TJ = 125°C 0.69 VGS = 0 V, dIS/dt = 100 A/ms, IS = 43 A 1.2 V 73 ns 138 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVBLS1D7N08H TYPICAL CHARACTERISTICS 250 5.0 V 10 V 8 V 6 V VDS = 5 V 150 ID, DRAIN CURRENT (A) 200 VGS = 4.5 V 100 50 0 4.0 V 0 1 3 2 4 5 RDS(on), ON−RESISTANCE (mW) TJ = 25°C 100 50 TJ = 175°C 2 20 10 TJ = 25°C TJ = 150°C 5 4 6 7 8 10 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 5 6 4.0 3.0 2.0 VGS = 10 V 1.0 0.5 0 50 100 150 200 250 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.4 1E−03 VGS = 10 V ID = 80 A IDSS, REVERSE LEAKAGE CURRENT (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 4 Figure 2. Transfer Characteristics 30 2.0 3 VGS, GATE−TO−SOURCE VOLTAGE (V) 40 2.2 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 80 A 3 150 Figure 1. On−Region Characteristics 50 0 200 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 250 TJ = 175°C TJ = 150°C 1E−04 1.8 TJ = 125°C 1E−05 1.6 TJ = 100°C TJ = 85°C 1E−06 1.4 1.2 1E−07 1.0 TJ = 25°C 1E−08 0.8 0.6 −75 −50 −25 0 25 50 75 100 125 150 175 1E−09 0 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 80 NVBLS1D7N08H TYPICAL CHARACTERISTICS CISS C, CAPACITANCE (pF) 10K COSS 1K 100 CRSS 10 1 VGS, GATE−TO−SOURCE VOLTAGE (V) 100K VGS = 0 V f = 1 MHz 0.1 1 10 8 VDD = 30 V VDD = 50 V 6 4 2 0 0 26 78 52 104 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 130 250 IS, REVERSE DRAIN CURRENT (A) t, SWITCHING TIME (ns) VDD = 40 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) td(off) tf tr 100 td(on) 0 5 10 15 20 25 30 40 35 45 50 150 100 50 0 TJ = 175°C 0 0.2 TJ = 25°C 0.4 0.6 TJ = −55°C 0.8 1.0 1.2 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 10 ms IPEAK (A) 100 10 0.1 0.1 200 VSD, BODY DIODE FORWARD VOLTAGE (V) 100 1 VGS = 0 V RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (A) ID = 80 A 80 1000 10 10 TC = 25°C Single Pulse VGS ≤ 10 V 1 0.5 ms 1 ms RDS(on) Limit Thermal Limit Package Limit 10 TJ(initial) = 25°C TJ(initial) = 100°C 10 10 ms 100 1000 1 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVBLS1D7N08H TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 0.2 0.1 0.05 1 0.02 0.01 R(t) (°C/W) 10 0.1 0.01 Single Pulse 0.001 0.00001 0.000001 0.0001 0.001 0.01 1 0.1 10 100 1000 PULSE TIME (s) Figure 13. Transient Thermal Impedance DEVICE ORDERING INFORMATION Device NVBLS1D7N08H Marking Package Shipping† 1D7N08H H−PSOF8L (Pb−Free) 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVBLS1D7N08H PACKAGE DIMENSIONS H−PSOF8L 11.68x9.80 CASE 100CU ISSUE A www.onsemi.com 6 NVBLS1D7N08H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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