NVBLS0D5N04M8TXG

NVBLS0D5N04M8 MOSFET – Power, Single, N-Channel 40 V, 300 A, 0.57 mW Features • • • • • www.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Parameter Symbol Ratings Units Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 300 A Drain Current − Continuous (VGS = 10) (Note 1) TC = 25°C Pulsed Drain Current TC = 25°C EAS 1064 mJ Power Dissipation PD 429 W 2.86 W/°C TJ, TSTG −55 to +175 °C Thermal Resistance, Junction−to−Case RqJC 0.35 °C/W Maximum Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 43 °C/W Derate Above 25°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting TJ = 25°C, L = 0.3 mH, IAS = 84 A, VDD = 40 V during inductor charging and VDD = 0 V during time in avalanche. 3. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2 oz copper. © Semiconductor Components Industries, LLC, 2018 June, 2019 − Rev. 0 D (9) See Figure 4 Single Pulse Avalanche Energy (Note 2) Operating and Storage Temperature MO−299A CASE 100CU 1 G (1) S (2−8) ORDERING INFORMATION Device Package NVBLS0D5N04M8TXG MO−299A (Pb−Free) Marking 0D5N04M8 Publication Order Number: NVBLS0D5N04M8/D NVBLS0D5N04M8 Table 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units ID = 250 mA, VGS = 0 V 40 − − V TJ = 25°C − − 1 mA TJ = 175°C (Note 4) OFF CHARACTERISTICS BVDSS Drain−to−Source Breakdown Voltage IDSS Drain−to−Source Leakage Current IGSS Gate−to−Source Leakage Current VDS = 40 V, VGS = 0 V − − 1 mA VGS = ±20 V − − ±100 nA VGS = VDS, ID = 250 mA 2.0 3.0 4.0 V TJ = 25°C − 0.46 0.57 mW VDS = 25 V, VGS = 0 V, f = 1 MHz ON CHARACTERISTICS VGS(th) Gate−to−Source Threshold Voltage RDS(on) Drain−to−Source On Resistance ID = 80 A, VGS = 10 V DYNAMIC CHARACTERISTICS Ciss Input Capacitance − 15900 − pF Coss Output Capacitance − 4000 − pF Crss Reverse Transfer Capacitance − 600 − pF − 2.6 − W − 220 296 nC − 29 39 nC Rg Qg(ToT) Qg(th) Gate Resistance f = 1 MHz Total Gate Charge at 10 V VGS = 0 to 10 V Threshold Gate Charge VGS = 0 to 2 V VDD = 20 V ID = 80 A Qgs Gate−to−Source Gate Charge − 73 − nC Qgd Gate−to−Drain “Miller” Charge − 41 − nC − − 221 ns − 54 − ns Rise Time − 82 − ns Turn−Off Delay − 106 − ns Fall Time − 52 − ns Turn−Off Time − − 215 ns ISD = 80 A, VGS = 0 V − − 1.25 V ISD = 40 A, VGS = 0 V − − 1.2 V IF = 80 A, dISD/dt = 100 A/ms, VDD = 32 V − 119 133 ns − 228 274 nC SWITCHING CHARACTERISTICS ton Turn−On Time td(on) Turn−On Delay tr td(off) tf toff VDD = 20 V, ID = 80 A, VGS = 10 V, RGEN = 6 W DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source−to−Drain Diode Voltage trr Reverse−Recovery Time Qrr Reverse−Recovery Charge 4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NVBLS0D5N04M8 1.2 700 1.0 600 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Characteristics 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(o C) Figure 1. Normalized Power Dissipation vs. Case Temperature VGS = 10V CURRENT LIMITED BY SILICON 500 400 300 200 100 0 175 CURRENT LIMITED BY PACKAGE 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, Z qJC 2 1 DUTY CYCLE − DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z qJA x RqJA + TC SINGLE PULSE 0.01 −5 −4 10 10 −3 −2 −1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 VGS = 10V T C = 25 oC IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25o C DERATE PEAK CURRENT AS FOLLOWS: I = I2 175 − T C 150 1000 SINGLE PULSE 100 −5 10 −4 10 −3 −2 −1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 NVBLS0D5N04M8 Typical Characteristics 10000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 2000 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms 100ms 0.1 TJ = 25 oC TJ = −55 oC TJ = 175 oC 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 100 1000 10000 350 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 300 250 200 TJ = 175 oC 10 TJ = 25oC 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 350 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 Figure 8. Forward Diode Characteristics VGS 5V 100 0 0.0 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 400 50 0.1 VGS = 0 V 100 0.1 6 Figure 7. Transfer Characteristics 150 0.001 0.01 400 180 60 STARTING TJ = 150 o C Figure 6. Unclamped Inductive Switching Capability VDD = 5V 120 10 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 240 STARTING TJ = 25 oC tAV, TIME IN AVALANCHE (ms) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 300 100 1 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 0 1000 TC = 25 o C 0.1 If R = 0 tAV = (L)(IAS)/(1.3*RATED BV DSS − V DD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BV DSS − VDD) +1] 80 ms PULSE WIDTH Tj=25 oC 300 5V 250 200 150 0 2.0 Figure 9. Saturation Characteristics 15V Top 10V 8V 5.5V 7V 6V 5.5V 5V Bottom 100 80 ms PULSE WIDTH Tj=175 oC 50 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS 0.0 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 NVBLS0D5N04M8 rDS(on), DRAIN TO SOURCE ON−RESISTANCE ( mW) 5 ID = 80A NORMALIZED DRAIN TO SOURCE ON−RESISTANCE Typical Characteristics PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 4 3 TJ = 175 oC TJ = 25oC 2 1 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 0.9 0.6 0.3 0.0 −80 −40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 1.6 1.4 1.2 1.0 0.8 ID = 80A VGS = 10V 0.6 0.4 −80 40 80 120 160 −40 0 TJ, JUNCTION TEMPERATURE(oC) 200 ID = 1mA 1.05 1.00 0.95 0.90 −80 −40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 100000 10000 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 1.10 VGS = VDS ID = 250 mA 1.2 1.8 Figure 12. Normalized RDSON vs. Junction Temperature NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.5 2.0 10 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 15. Capacitance vs. Drain to Source Voltage ID = 80A VDD =16V 8 VDD = 20V VDD = 24V 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 220 Qg, GATE CHARGE(nC) Figure 16. Gate Charge vs. Gate to Source Voltage PowerTrench is a registered trademark of Semiconductor Components Industries, LLC. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS H−PSOF8L 11.68x9.80 CASE 100CU ISSUE A DATE 06 JAN 2020 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXXX XXXXXXXX A Y WW ZZ XXXX DOCUMENT NUMBER: DESCRIPTION: = Assembly Location = Year = Work Week = Assembly Lot Code = Specific Device Code 98AON13813G H−PSOF8L 11.68x9.80 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 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