NVBLS0D7N06C

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, TOLL V(BR)DSS RDS(ON) MAX ID MAX 60 V 0.75 mW @ 10 V 470 A 60 V, 0.75 mW, 470 A D NVBLS0D7N06C Features • • • • • Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant G S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V ID 470 A Parameter Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) TC = 25°C Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 2) 332 PD TC = 100°C TA = 25°C Steady State Pulsed Drain Current ID Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 40 A) Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) A 54 PD ORDERING INFORMATION Device 38 TA = 100°C TA = 25°C, tp = 10 ms W 314 157 TA = 100°C TA = 25°C H−PSOF8L CASE 100CU W 4.2 2.1 IDM 900 A TJ, Tstg −55 to +175 °C IS 260 A EAS 800 mJ TL 260 °C NVBLS0D7N06C Package Shipping† H−PSOF8L (Pb−Free) 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case − Steady State (Note 2) Junction−to−Ambient − Steady State (Note 2) Symbol Value Unit RqJC 0.48 °C/W RqJA 36 in2 1. Surface−mounted on FR4 board using a 1 pad size, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2019 November, 2021 − Rev. 1 1 Publication Order Number: NVBLS0D7N06C/D NVBLS0D7N06C Table 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Min Drain−to−Source Breakdown Voltage V(BR)DSS ID = 250 mA, VGS = 0 V 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 661 mA, ref to 25°C Parameter Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VDS = 60 V, VGS = 0 V V 26.5 mV/°C TJ = 25°C 10 mA TJ = 125°C 100 mA 100 nA 4.0 V IGSS VDS = 0 V, VGS = 20 V VGS(th) VGS = VDS, ID = 661 mA VGS(th)/TJ ID = 661 mA, ref to 25°C 9.8 RDS(on) VGS = 10 V, ID = 80 A 0.56 gFS VDS = 10 V, ID = 80 A 310 S Input Capacitance Ciss VGS = 0 V, VDS = 30 V, f = 10 kHz 13730 pF Output Capacitance Coss 6912 pF Reverse Transfer Capacitance Crss 92 pF 170 nC 39 nC ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance 2.0 2.8 mV/°C 0.75 mW CHARGES & CAPACTIANCES VGS = 10 V, VDS = 30 V, ID = 80 A Total Gate Charge QG(tot) Threshold Gate Charge QG(th) Gate−to−Source Charge Qgs 62 nC Gate−to−Drain Charge Qgd 16 nC 37 ns 57 ns td(off) 146 ns tf 105 ns SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr VGS = 10 V, VDS = 30 V, ID = 80 A, RG = 6 W DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD IS = 80 A, VGS = 0 V TJ = 25°C 0.79 1.2 V IS = 80 A, VGS = 0 V TJ = 125°C 0.66 V 132 ns 64 ns Reverse Recovery Time trr Charge Time ta Discharge Time tb 68 ns Reverse Recovery Charge Qrr 386 nC VGS = 0 V, dIS/dt = 100 A/ms, IS = 66 A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 NVBLS0D7N06C TYPICAL CHARACTERISTICS 1200 1100 10 V & 8 V 7.0 V 600 6.0 V ID, DRAIN CURRENT (A) 800 700 600 500 VGS = 5.0 V 400 300 200 100 0 0.0 4.5 V 0.5 1.0 1.5 2.5 2.0 3.0 400 300 TJ = 25°C 200 100 TJ = 125°C 4.5 5.0 Figure 2. Transfer Characteristics TJ = 25°C ID = 80 A 2.25 2.0 1.75 1.5 1.25 1.0 0.75 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 2.75 2.5 2.25 2.0 1.75 VGS = 5 V 1.25 VGS = 6 V 1.0 VGS = 7 V 0.75 0.5 VGS = 10 V 0 50 100 150 200 250 300 350 400 ID, DRAIN CURRENT (A) 1M IDSS, LEAKAGE CURRENT (nA) VGS = 10 V ID = 80 A 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 VGS = 5.5 V 1.5 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.9 0.7 −50 −25 5.5 3.0 Figure 3. On−Resistance vs. VGS RDS(on), NORMALIZED DRAIN− SOURCE ON−RESISTANCE 4.0 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 2.5 1.7 1.6 3.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2.75 1.8 TJ = −55°C Figure 1. On−Region Characteristics 3.0 0.5 4.5 500 0 2.5 RDS(on), DRAIN−SOURCE RESISTANCE (mW) RDS(on), DRAIN−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 1000 900 VDS = 10 V 25 50 75 100 125 150 TJ = 150°C 10K TJ = 125°C 1K TJ = 85°C 100 10 175 TJ = 175°C 100K VGS = 0 V 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 60 NVBLS0D7N06C TYPICAL CHARACTERISTICS Ciss Coss 1K 100 10 Crss VGS = 0 V TJ = 25°C f = 10 kHz 0 10 20 30 40 50 60 t, TIME (ns) QGS 5 QGD 4 3 VDS = 30 V ID = 80 A TJ = 25°C 2 1 0 0 20 40 60 80 100 120 140 160 180 1000 td(off) VGS = 0 V tf td(on) 100 1 100 10 TJ = 175°C 1 TJ = 150°C 0.1 0.2 100 10 0.3 0.4 0.5 TJ = 25°C 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 100 10 ms 10 0.5 ms 1 ms Single Pulse TC = 25°C VGS ≤ 10 V RDS(on) Limit Thermal Limit Package Limit 0.1 100 1 10 TJ(initial) = 25°C IPEAK (A) ID, DRAIN CURRENT (A) 7 6 Figure 8. Gate−to−Source Voltage vs. Total Gate Charge tr 0.1 9 8 Figure 7. Capacitance Variation VGS = 10 V VDS = 30 V ID = 80 A 1 QT QG, TOTAL GATE CHARGE (nC) 1000 10 11 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) CAPACITANCE (pF) 10K VGS, GATE−TO−SOURCE VOLTAGE (V) 100K TJ(initial) = 100°C 10 10 ms 100 1000 1 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVBLS0D7N06C TYPICAL CHARACTERISTICS 100 R(t) (°C/W) 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 0.01 0.001 0.000001 RqJA Steady State = 36°C/W Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 13. Thermal Characteristics (Junction−to−Ambient) www.onsemi.com 5 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS H−PSOF8L 11.68x9.80 CASE 100CU ISSUE A DATE 06 JAN 2020 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXXX XXXXXXXX A Y WW ZZ XXXX DOCUMENT NUMBER: DESCRIPTION: = Assembly Location = Year = Work Week = Assembly Lot Code = Specific Device Code 98AON13813G H−PSOF8L 11.68x9.80 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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