NVBLS0D7N04M8
MOSFET – Power, Single,
N-Channel
40 V, 240 A, 0.75 mW
Features
•
•
•
•
•
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Typical RDS(on) = 0.59 mW at VGS = 10 V, ID = 80 A
Typical Qg(tot) = 144 nC at VGS = 10 V, ID = 80 A
UIS Capability
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS TJ = 25°C unless otherwise noted
Parameter
Symbol
Ratings
Units
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
240
A
Drain Current − Continuous (VGS = 10)
(Note 1)
TC = 25°C
Pulsed Drain Current
TC = 25°C
EAS
737
mJ
Power Dissipation
PD
357
W
2.38
W/°C
TJ, TSTG
−55 to +175
°C
Thermal Resistance, Junction−to−Case
RqJC
0.42
°C/W
Maximum Thermal Resistance,
Junction−to−Ambient
(Note 3)
RqJA
43
°C/W
Derate Above 25°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
2. Starting TJ = 25°C, L = 0.36 mH, IAS = 64 A, VDD = 40 V during inductor
charging and VDD = 0 V during time in avalanche.
3. RqJA is the sum of the junction−to−case and case−to−ambient thermal
resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA
is determined by the board design. The maximum rating presented here is
based on mounting on a 1 in2 pad of 2 oz copper.
© Semiconductor Components Industries, LLC, 2018
June, 2019 − Rev. 0
D (9)
See
Figure 4
Single Pulse Avalanche Energy (Note 2)
Operating and Storage Temperature
MO−299A
CASE 100CU
1
G (1)
S (2−8)
ORDERING INFORMATION
Device
Package
NVBLS0D7N04M8TXG MO−299A
(Pb−Free)
Marking
0D7N04M8
Publication Order Number:
NVBLS0D7N04M8/D
NVBLS0D7N04M8
Table 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
ID = 250 mA, VGS = 0 V
40
−
−
V
TJ = 25°C
−
−
1
mA
TJ = 175°C (Note 4)
OFF CHARACTERISTICS
BVDSS
Drain−to−Source Breakdown Voltage
IDSS
Drain−to−Source Leakage Current
IGSS
Gate−to−Source Leakage Current
VDS = 40 V,
VGS = 0 V
−
−
1
mA
VGS = ±20 V
−
−
±100
nA
VGS = VDS, ID = 250 mA
2.0
3.3
4.0
V
TJ = 25°C
−
0.59
0.75
mW
VDS = 25 V, VGS = 0 V, f = 1 MHz
ON CHARACTERISTICS
VGS(th)
Gate−to−Source Threshold Voltage
RDS(on)
Drain−to−Source On Resistance
ID = 80 A, VGS = 10 V
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
−
12000
−
pF
Coss
Output Capacitance
−
3300
−
pF
Crss
Reverse Transfer Capacitance
−
440
−
pF
−
3.3
−
W
−
144
188
nC
−
22
26
nC
Rg
Qg(ToT)
Qg(th)
Gate Resistance
f = 1 MHz
Total Gate Charge at 10 V
VGS = 0 to 10 V
Threshold Gate Charge
VGS = 0 to 2 V
VDD = 32 V
ID = 80 A
Qgs
Gate−to−Source Gate Charge
−
66
−
nC
Qgd
Gate−to−Drain “Miller” Charge
−
16
−
nC
−
−
162
ns
−
42
−
ns
Rise Time
−
73
−
ns
Turn−Off Delay
−
83
−
ns
Fall Time
−
50
−
ns
Turn−Off Time
−
−
279
ns
ISD = 80 A, VGS = 0 V
−
−
1.25
V
ISD = 40 A, VGS = 0 V
−
−
1.2
V
IF = 80 A, dISD/dt = 100 A/ms,
VDD = 32 V
−
111
129
ns
−
178
214
nC
SWITCHING CHARACTERISTICS
ton
Turn−On Time
td(on)
Turn−On Delay
tr
td(off)
tf
toff
VDD = 20 V, ID = 80 A,
VGS = 10 V, RGEN = 6 W
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Source−to−Drain Diode Voltage
trr
Reverse−Recovery Time
Qrr
Reverse−Recovery Charge
4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVBLS0D7N04M8
1.2
600
1.0
500
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
Typical Characteristics
0.8
0.6
0.4
0.2
0.0
0
25
50
75 100 125 150
TC, CASE TEMPERATURE(o C)
VGS = 10V
CURRENT LIMITED
BY SILICON
400
300
200
100
0
175
Figure 1. Normalized Power Dissipation vs. Case
Temperature
CURRENT LIMITED
BY PACKAGE
25
50
75 100 125 150 175
TC, CASE TEMPERATURE( o C)
200
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
NORMALIZED THERMAL
IMPEDANCE, Z qJC
2
1
0.1
DUTY CYCLE − DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z qJA x RqJA + TC
SINGLE PULSE
0.01
−5
10
−4
10
−3
−2
−1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
VGS = 10V
T C = 25 oC
IDM, PEAK CURRENT (A)
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
I = I2
175 − T C
150
100
10
−5
10
SINGLE PULSE
−4
10
−3
−2
−1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
0
10
1
10
NVBLS0D7N04M8
Typical Characteristics
100
100us
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(on)
1
0.1
1ms
SINGLE PULSE
TJ = MAX RATED
10ms
100ms
TC = 25 o C
0.1
1
10
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ = 25 oC
TJ = 175 oC
2
TJ = −55 o C
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
10
100 1000 10000
TJ = 175 o C
10
TJ = 25o C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Forward Diode Characteristics
300
300
VGS
250
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1
VGS = 0 V
100
0.1
7
Figure 7. Transfer Characteristics
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
200
150
100
80 ms PULSE WIDTH
Tj=25oC
50
0
0.1
400
180
60
STARTING TJ = 150oC
Figure 6. Unclamped Inductive Switching
Capability
VDD = 5V
120
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
240
STARTING TJ = 25oC
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
300
100
1
0.001 0.01
100 200
Figure 5. Forward Bias Safe Operating Area
0
If R = 0
tAV = (L)(IAS)/(1.3*RATED BV DSS − VDD)
If R ! 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS − VDD) +1]
1000
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
2000
1000
0
5V
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
250
Figure 9. Saturation Characteristics
VGS
5.5V
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
150
100
50
0
5
5V
200
80 ms PULSE WIDTH
Tj=175 oC
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Saturation Characteristics
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4
5
NVBLS0D7N04M8
rDS(on), DRAIN TO SOURCE
ON−RESISTANCE (mW)
10
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
Typical Characteristics
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
ID = 80A
8
6
TJ =
175 o C
TJ
= 25 oC
4
2
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 11. RDSON vs. Gate Voltage
0.9
0.6
0.3
0.0
−80
−40
0
40
80 120 160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
CAPACITANCE (pF)
Ciss
Coss
1000
Crss
100
f = 1MHz
VGS = 0V
10
0.1
1.4
1.2
1.0
0.8
ID = 80A
VGS = 10V
0.6
0.4
−80
−40
0
40
80 120 160
TJ, JUNCTION TEMPERATURE(oC)
200
ID = 1mA
1.05
1.00
0.95
0.90
−80
−40
0
40
80 120 160
TJ, JUNCTION TEMPERATURE ( oC)
200
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
100000
10000
1.6
1.10
VGS = VDS
ID = 250 mA
1.2
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
1.8
Figure 12. Normalized RDSON vs. Junction
Temperature
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.5
2.0
10
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE ( V)
Figure 15. Capacitance vs. Drain to Source
Voltage
ID = 80A
8
VDD = 20V
VDD =16V
6
VDD = 24V
4
2
0
0
30
60
90
120
Qg, GATE CHARGE(nC)
150
Figure 16. Gate Charge vs. Gate to Source
Voltage
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE A
DATE 06 JAN 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
WW
ZZ
XXXX
DOCUMENT NUMBER:
DESCRIPTION:
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
= Specific Device Code
98AON13813G
H−PSOF8L 11.68x9.80
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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