PJ6676

PJ6676 25V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@15A=8mΩ • RDS(ON), VGS@4.5V,IDS@13A=12mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request SOIC-08 MECHANICALDATA • Case: SOIC-08 Package • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : 6676 PIN Assignment 8 7 6 5 1 2 3 4 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RθJA Li mi t 25 +20 15 50 2 .5 1 .5 -5 5 to + 1 5 0 400 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=40A, VDD=25V, L=0.5mH Junction-to Ambient Thermal Resistance(PCB mounted)2 C mJ O C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUL.19.2006 PAGE . 1 PJ6676 ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D ynami c V D S = 1 5 V , ID = 1 5 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is V SD IS = 2 . 5 A , V G S = 0 V 0 .7 3 2 .5 1 .2 A V Qgs Qgd T d ( o n) t rr t d (o ff) tf C iss C oss C rss V D S = 1 5 V , V GS = 0 V f=1 .0 MHZ VDD=15V , RL=15Ω ID=1A , VGEN=10V RG=3.6Ω V D S = 1 5 V , ID = 1 5 A V GS = 1 0 V 74 8 .3 1 4 .2 17.2 15 78 30 3750 650 500 nC 21 17 ns 90 42 pF 39 B V DSS V G S ( t h) R D S ( o n) R D S ( o n) ID S S IG S S g fS V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VGS=4.5V, ID=13A VGS=10V, ID=15A VDS=25V, VGS=0V V GS = + 2 0 V , V D S = 0 V V D S = 1 0 V , ID = 1 5 A 25 1 30 9 .6 6.0 3 1 2 .0 mΩ 8.0 1 +100 uA nA S V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s Switching Test Circuit V IN V DD RL V OUT Gate Charge Test Circuit V GS V DD RL RG 1mA RG STAD-JUL.19.2006 PAGE . 2 PJ6676 Typical Characteristics Curves (TA=25 C,unless otherwise noted) O ID - Drain-to-Source Current (A) 60 50 40 30 20 ID - Drain Source Current (A) V GS= 4.5V, 5.0V, 6.0V, 10.0V 4.0V 60 50 40 30 20 10 0 V DS=10V 3.5V T J=25 OC T J=125 OC T J=-55 OC 1.5 2 2.5 3 3.5 4 4.5 3.0V 10 2.5V 0 0 1 2 3 4 5 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic R DS(ON) - On-Resistance (m W ) 16 30 R DS(ON) - On-Resistance (m W ) 25 20 15 10 5 0 ID =15A 12 V GS=4.5V 8 V GS=10V 4 T J=125 OC T J=25 OC 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 0 0 10 20 30 40 50 60 ID - Drain Current (A) FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance (Normalized) 1.7 V GS=10V I D=15A C - Capacitance (pF) 5000 4000 1.5 V GS=0V f=1MH Z Ciss 1.3 3000 2000 1.1 0.9 1000 Coss Crss 0.7 0 -25 0 25 50 75 100 o -50 125 150 0 5 10 15 20 25 TJ - Junction Tem perature ( C) V DS - Drain-to-Source Voltage (V) FIG.5- On Resistance vs Junction Temperature FIG.6- Capacitance STAD-JUL.19.2006 PAGE . 3 PJ6676 VGS - Gate-to-Source Voltage (V) 10 Vgs Qg 8 6 V DS=15V I D=15A 4 2 Vgs(th) Qg(th) Qgs Qsw 0 0 10 20 30 40 50 60 70 80 Qgd Qg Qg - Gate Charge (nC) Fig.7 - Gate Charge Waveform Fig.8 - Gate Charge Vth - G-S Threshold Voltage (NORMALIZED) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 BVDSS - Breakdown Voltage (V) I D=250uA 32 31 30 29 28 27 I D=250uA -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Tem perature (oC) ( TJ - Junction Temperature C) Fig.9 - Threshold Voltage vs Temperature Fig.10 - Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) V GS=0V 10 T J=125 OC 1 0.1 T J=25 OC T J=-55 OC 0.01 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) Fig.11 - Source-Drain Diode Forward Voltage STAD-JUL.19.2006 PAGE . 4 PJ6676 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 3K per 13" plastic Reel LEGALSTATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUL.19.2006 PAGE . 5