FDP6676S

FDP6676S/FDB6676S October 2001 FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET™ General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP/B6676S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP/B6676S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP/B6676 in parallel with a Schottky diode. Features • 38 A, 30 V. RDS(ON) = 6.5 mΩ @ VGS = 10 V RDS(ON) = 8.0 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (40nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability • D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±16 (Note 1) (Note 1) Units V V A W W/°C °C °C 76 150 70 0.56 –55 to +150 275 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.8 55 °C/W °C/W Package Marking and Ordering Information Device Marking FDB6676S FDP6676S Device FDB6676S FDP6676S Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 45 2001 Fairchild Semiconductor Corporation FDP6676S/FDB6676S Rev. C (W) FDP6676S/FDB6676S Electrical Characteristics Symbol W DSS IAR TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 25 V, ID=12A Min Typ Max Units 310 12 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 1 mA ID = 1 mA, Referenced to 25°C VDS = 24 V, VGS = 16 V, VGS = –16 V VGS = 0 V VDS = 0 V VDS = 0 V 30 25 500 100 –100 V mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 1 mA ID = 1 mA, Referenced to 25°C VGS = 10 V, ID = 38 A ID = 35 A VGS = 4.5 V, VGS=10 V, ID =38A, TJ=125°C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 38 A 1 1.3 –8.4 4.7 5.2 7.3 3 V mV/°C 6.5 8.0 11 mΩ ID(on) gFS 60 145 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 4853 850 316 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDS = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 14 11 89 31 25 20 142 50 56 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 38 A, 40 10 11 Drain–Source Diode Characteristics and Maximum Ratings VSD trr Qrr Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. See “SyncFET Schottky body diode characteristics” below. Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/µs (Note 1) (Note 1) 0.4 0.5 28.5 57 0.7 V nS nC (Note 2) FDP6676S/FDB6676S Rev C (W) FDP6676S/FDB6676S Typical Characteristics 150 125 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V 100 1.8 3.5V 3.0V VGS = 2.5V 1.6 2.5V 75 50 25 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 3.0V 3.5V 1.2 4.5V 1 10V 0.8 0 25 50 75 100 125 150 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.016 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 38A VGS =10V 1.4 ID = 19A 0.014 0.012 1.2 0.01 1 TA = 125oC 0.008 0.8 0.006 TA = 25oC 0.6 -55 -35 -15 5 25 45 65 o 0.004 85 105 120 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 90 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V IS, REVERSE DRAIN CURRENT (A) VGS = 0V 75 ID, DRAIN CURRENT (A) 10 60 TA = 125oC 1 45 TA = 125oC 30 25oC 0.1 15 25oC -55oC -55oC 0 1 1.5 2 2.5 3 0.01 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6676S/FDB6676S Rev C (W) FDP6676S/FDB6676S Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) 6400 ID = 38A 8 VDS = 10V 20V 15V CAPACITANCE (pF) 5600 CISS 4800 4000 3200 2400 1600 800 f = 1MHz VGS = 0 V 6 4 COSS 2 CRSS 0 5 10 15 20 25 30 0 0 20 40 Qg, GATE CHARGE (nC) 60 80 0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 1000 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 800 SINGLE PULSE R θ JC = 1 .8°C/W T A = 2 5°C 100 R DS(ON) L IMIT 10ms 100m 1s 10s DC 600 400 10 V GS = 10V SINGLE PULSE o R θJC = 1 .8 C/W T A = 25 C o 200 1 0.1 1 10 V DS , DRAIN-SOURCE VOLTAGE (V) 100 0 1 10 t1 , TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJC(t) = r(t) * RθJC RθJC = 1.8 °C/W P(pk t1 t2 SINGLE 0.1 0.1 0.05 0.02 0.01 0.01 TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. FDP6676S/FDB6676S Rev C (W) FDP6676S/FDB6676S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6676S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 TA = 100 C 0.01 o IDSS, REVERSE LEAKAGE CURRENT (A) Current :0.8A/div 0.001 TA = 25 C 0.0001 o 0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V) Time : 12.5ns/div Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDP6676S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP6676). Current : 0.8A/div Time : 12.5ns/div Figure 13. Non-SyncFET (FDP6676) body diode reverse recovery characteristic. FDP6676S/FDB6676S Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4