FDP6676

FDP6676/FDB6676 April 2001 FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) . Features • 42 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating Applications • Synchronous rectifier • DC/DC converter . D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ± 16 (Note 1) (Note 1) Units V V A W W °C °C 84 240 93 0.48 -65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.6 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDP6676 FDB6676 Device FDP6676 FDB6676 Reel Size Tube 13” Tape width n/a 24mm Quantity 45 800 units 2000 Fairchild Semiconductor Corporation FDP6676/FDB6676 Rev C(W) FDP6676/FDB6676 Electrical Characteristics Symbol W DSS IAR TA = 25°C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Test Conditions VDD = 15 V, ID = 20 A Min Typ Max Units 370 20 mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 16 V, VGS = –16 V, VGS = 0 V VDS = 0 V VDS = 0 V 30 24 1 100 –100 V mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 42 A ID = 39 A VGS = 4.5 V, VGS=10V, ID = 42 A, TJ=125°C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 42 A 1 1.5 –4.5 4.3 4.9 7.0 3 V mV/°C 6 7.5 11 mΩ ID(on) gFS 60 141 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 5324 841 384 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD Notes: Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 15 10 93 37 27 20 149 59 60 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 42 A, 43 13 11 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 42 A Voltage 0.9 84 1.3 A V 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. TO-220 package is supplied in tube / rail @ 45 pieces per rail. 3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A FDP6676/FDB6676 Rev. C(W) FDP6676/FDB6676 Typical Characteristics 150 4.5V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 VGS = 10V ID, DRAIN CURRENT (A) 120 1.6 VGS = 3.0V 1.4 3.5V 1.2 4.0V 4.5V 6.0V 1 10V 3.0V 90 60 30 2.5V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 30 60 90 120 150 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.017 RDS(ON), ON-RESISTANCE (OHM) 1.9 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID =42 A VGS = 10V ID = 21 A 0.014 0.011 TA = 125oC 0.008 0.005 TA = 25oC 0.002 2 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 90 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 75 ID, DRAIN CURRENT (A) 60 45 TA = 125oC 30 15 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 25oC -55oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6676/FDB6676 Rev. C(W) FDP6676/FDB6676 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 42 A 8 CAPACITANCE (pF) 15V 6 VDS = 5V 10V 7000 6000 CISS 5000 4000 3000 2000 COSS 1000 CRSS f = 1MHz VGS = 0 V 4 2 0 0 10 20 30 40 50 60 70 80 90 Qg, GATE CHARGE (nC) 0 0 6 12 18 24 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 1000 SINGLE PULSE RθJC = 1.6°C/W TC = 25°C ID, DRAIN CURRENT (A) 800 100ms 100 RDS(ON) LIMIT 1s 10s DC 10 VGS = 10V SINGLE PULSE RθJC = 1.6o C/W TC = 25o C 1 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 600 400 200 0 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RθJC(t) = r(t) + RθJC RθJC = 1.6 °C/W P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDP6676/FDB6676 Rev. C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ Star* Power™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET  VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1