MMBT5401

MMBT5401 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 160 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * 0.055(1.40) 2 EMITTER 0.006(0.15) 0.003(0.08) 0.047(1.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.019(2.00) 0.071(1.80) 1 3 0.110(2.80) 2 0.118(3.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS (@ TA = 25OC unless otherwise noted) RATINGS Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C o O SYMBOL PD TJ TSTG VALUE 300 150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS (@ TA = 25OC unless otherwise noted) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)". SYMBOL R qJA MIN. TYP. MAX. 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -1.0 mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = -100uAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = -10uAdc, I C = 0) Collector Cutoff Current (V CB = -120Vdc,IE=0) ( V CE = -120Vdc, IE=0, TA= 100 OC) V(BR)CEO V(BR)CBO V(BR)EBO ICES -150 -160 -5.0 -50 -50 Vdc Vdc Vdc nAdc uAdc Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (I C = -1.0mAdc, V CE = -5.0Vdc) (I C = -10mAdc, V CE = -5.0Vdc) ( I C = -50mAdc, V CE = -5.0Vdc) Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) Base-Emitter Saturation Voltage (I C = -10Adc, I B =-1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) VCE(sat) hFE 50 60 50 240 -0.2 -0.5 -1.0 -1.0 Vdc - VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -10Vdc, f= 100MHz) Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz) Small-Signal Current Gain (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) Noise Figure (V CE = -5.0Vdc, I C = -200 uAdc, RS=10 W, f = 1.0kHz) fT Cobo hfe NF 100 40 300 6.0 200 8.0 MHz pF dB RATING AND CHARACTERISTICS CURVES ( MMBT5401 ) 200 150 hFE, CURRENT GAIN 100 70 50 -55 C O TJ=125 C 25 C O O 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 VCE = -1.0V VCE = -5.0V 20 30 50 100 Figure 1. DC Current Gain 1.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA IC, COLLECTOR CURRENT (mA) Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT (uA) 102 101 100 10-1 10-2 10-3 VCE= 30V IC=ICES TJ=125 C 75 C O O IB, BASE CURRENT (mA) 1.0 0.9 0.8 V, VOLTAGE (V) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 TJ=25 C O VBE(sat) @ IC/IB = 10 REVERSE O 25 C FORWARD VCE(sat) @ IC/IB = 10 0.3 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Collector Cut-Off Region Figure 4. "On" Voltages RATING AND CHARACTERISTICS CURVES ( MMBT5401 ) QV, TEMPERATURE COEFFICIENT (mV/ C) 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 QVB for VBE(sat) QVC for VCE(sat) C, CAPACITANCE (pF) TJ = -55 Cto 135 C O O 100 70 50 30 20 10 7.0 5.0 3.0 2.0 Cibo TJ =25 C O O Cobo 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 Figure 5.Temperature Coefficients 1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC/IB = 10 O TJ =25 C 2000 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 6.Capacitances 1000 700 500 t, TIME (ns) 300 200 100 70 50 30 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 tr @ VCC = 120V tr @ VCC = 30V IC/IB = 10 O TJ =25 C tf @ VCC = 30 V tf @ VCC = 120V ts @ VCC = 120V td @ VBE(off) = 1.0 V VCC= 120 V 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) Figure 7.Turn-On Time IC, COLLECTOR CURRENT (mA) Figure 8.Turn-Off Time DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. 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