RJH65T14DPQ-A0#T0

Data Sheet RJH65T14DPQ-A0 650V - 50A - IGBT Application: Induction Heating Microwave Oven R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 Features  Optimized for current resonance application  Low collector to emitter saturation voltage VCE(sat) = 1.45 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Tc = 25 C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 C Tc = 100 C Collector peak current Collector to emitter diode Tc = 25 C Forward current Tc = 100 C Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Note: Symbol VCES VGES IC Note1 IC Note1 iC(peak) Note1 IDF Ratings 650 30 100 50 180 40 Unit V V A A A A IDF iDF(peak) Note2 PC j-c Note3 j-cd Note3 Tj Note4 Tstg 20 100 250 0.6 1.33 175 –55 to +150 A A W C/W C/W °C °C Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data. R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 Page 1 of 9 RJH65T14DPQ-A0 Electrical Characteristics (Tc = 25 C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Symbol ICES IGES VGE(off) VCE(sat) Min   4  Typ    1.45 Max 100 ±1 7 1.75 Unit A A V V Test Conditions VCE = 650 V, VGE = 0 V VGE = ±30 V, VCE = 0 V VCE = 10 V, IC = 1 mA IC = 50 A, VGE = 15 V Note5 Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on loss energy Turn-off loss energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on loss energy Turn-off loss energy Total switching energy Tail loss Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal Etail — — — — — —  — — — — — —  — — — — — — — 1750 69 34 80 15 35 38 30 125 115 1.3 1.2 2.5 38 30 130 135 1.45 1.45 2.90 560 — — — — — —  — — — — — —  — — — — — — — pF pF pF nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ J VCE = 25 V VGE = 0 V f = 1 MHz C-E diode forward voltage C-E diode reverse recovery time VECF trr   1.2 250 1.6  V ns IF = 20 A Note5 IF = 20 A diFdt = 300 As VGE = 15 V VCE = 300 V IC = 50 A VCC = 400 V VGE = 15 V IC = 50 A Rg = 10  TC = 25 C Inductive load VCC = 400 V VGE = 15 V IC = 50 A Rg = 10  TC = 150 C Inductive load VCC = 300 V, VGE = 20 V IC = 50 A, Rg = 15  Tc = 125 C Current resonance circuit Notes: 1. 2. 3. 4. Pulse width limited by safe operating area. PW  5 s, duty cycle  1% Value at Tc = 25 C Please use this device in the thermal conditions which the junction temperature does not exceed 175 C. Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175 C. 5. Pulse test R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 Page 2 of 9 RJH65T14DPQ-A0 Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 120 Collector Current IC (A) Collector Dissipation PC (W) 300 200 100 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 50 75 100 125 150 175 Case Temperature Tc (C) Maximum Safe Operation Area Typical Transfer Characteristics 120 100 0 s 10 10 =1 Collector Current IC (A) PW 0 s 1 0.1 0.01 1 Tc = 25 C Single pulse Notes 6 VCE = 10 V Pulse Test 90 60 150 C Tc = 25 C 30 0 10 100 1000 0 Collector to Emitter Voltage VCE (V) 120 Pulse Test 2 Tc = 25 C Pulse Test 2 Tc = 150 C 10 V 9.0 V 15 V 90 4 6 8 10 Typical Output Characteristics Collector Current IC (A) 120 2 Gate to Emitter Voltage VGE (V) Typical Output Characteristics Collector Current IC (A) 25 Case Temperature Tc (C) 1000 Collector Current IC (A) 100 60 8.0 V 30 10 V 9.0 V 15 V 90 8.0 V 60 30 VGE = 7.0 V VGE = 7.0 V 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Notes: 6. This data is the designed value on Renesas’s measurement condition, Renesas recommends that operating conditions are designed according to a document “Power MOSFET/IGBT Attention of Handling Semiconductor Devices (R07ZZ0010)”. R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 Page 3 of 9 RJH65T14DPQ-A0 Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Tc = 25 C Pulse Test 4 IC = 100 A 50 A 25 A 3 2 1 0 4 8 12 16 20 IC = 100 A 4 Tc = 150 C Pulse Test 50 A 25 A 3 2 1 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temperature (Typical) Collector to Emitter Saturation Voltage vs. Case Temperature (Typical) 8 IC = 10 mA 6 4 0 25 5 Gate to Emitter Voltage VGE (V) 10 2 Collector to Emitter Saturation Voltage VCE(sat) (V) 5 1.0 mA VCE = 10 V Pulse Test 0 25 50 75 100 125 150 Case Temperature Tc (C) R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 Collector to Emitter Saturation Voltage VCE(sat) (V) Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 3.0 2.5 VGE = 15 V Pulse Test IC = 100 A 2.0 50 A 1.5 25 A 1.0 0.5 0 25 0 25 50 75 100 125 150 Case Temperature Tc (C) Page 4 of 9 RJH65T14DPQ-A0 Switching Characteristics (Typical) (1) Switching Energy Losses E (mJ) Switching Times t (ns) 1000 tf td(off) 100 td(on) tr 10 1 10 Switching Characteristics (Typical) (2) VCC = 400 V, VGE = 15 V Rg = 10 , Tc = 150 C 100 10 VCC = 400 V, VGE = 15 V Rg = 10 , Tc = 150 C Eoff 1 Eon 0.1 10 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) Switching Energy Losses E (mJ) Switching Times t (ns) 1000 VCC = 400 V, VGE = 15 V IC = 50 A, Tc = 150 C tf 100 td(off) td(on) tr 10 1 10 100 10 VCC = 400 V, VGE = 15 V IC = 50 A, Tc = 150 C Eon Eoff 1 1 Switching Energy Losses E (mJ) Switching Times t (ns) VCC = 400 V, VGE = 15 V IC = 50 A, Rg = 10  td(off) tf td(on) tr 10 1 25 50 75 100 125 Case Temperature Tc (C) (Inductive load) R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 100 10 Gate Registance Rg () (Inductive load) Gate Registance Rg () (Inductive load) 1000 100 150 10 VCC = 400 V, VGE = 15 V IC = 50 A, Rg = 10  Eon 1 25 Eoff 50 75 100 125 150 Case Temperature Tc (C) (Inductive load) Page 5 of 9 RJH65T14DPQ-A0 Typical Capacitance vs. Collector to Emitter Voltage Cies 1000 100 Coes 10 Cres 1 0 50 100 150 200 250 300 800 600 VCE 8 200 0 0 Tc = 150 C 400 25 C 200 0 40 60 80 Forward Current IF (A) R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 20 40 IC = 50 A Ta = 25 C 60 80 0 100 100 100 Forward Current IF (A) Reverse Recovery Time trr (ns) VCC = 300 V diF/dt = 300 As 20 4 VCC = 480 V 300 V 120 V Forward Current vs. Forward Voltage (Typical) 1000 0 12 Gate Charge Qg (nC) Reverse Recovery Time vs. Forward Current (Typical) 600 VCC = 480 V 300 V 120 V 400 Collector to Emitter Voltage VCE (V) 800 16 VGE Gate to Emitter Voltage VGE (V) VGE = 0 V, Tc = 25 C f = 1 MHz Collector to Emitter Voltage VCE (V) Capacitance C (pF) 10000 Dynamic Input Characteristics (Typical) Tc = 25 C 80 150 C 60 40 20 0 VCE = 0 V Pulse Test 0 1 2 3 4 C-E Diode Forward Voltage VCEF (V) Page 6 of 9 Normalized Transient Thermal Impedance s (t) RJH65T14DPQ-A0 Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 1 D=1 0.5 j – c(t) = s (t) • j – c j – c = 0.60C/W, Tc = 25C 0.2 0.1 0 .1 0 .0 5 PDM 0.02 0.01 1 shot pulse 0.01 10  100  D= PW T PW T 1m 10 m Pulse Width 100 m 1 10 PW (s) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 1 D=1 0.5 0.2 0.1 0.05 j – c(t) = s (t) • j – c j – c = 1.33C/W, Tc = 25C 0.1 PDM 0.02 0.01 1 shot pulse 0.01 10  R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 100  D= PW T PW T 1m 10 m Pulse Width 100 m 1 10 PW (s) Page 7 of 9 RJH65T14DPQ-A0 Waveform Switching Time Test Circuit VGE Diode clamp 90% 10% L IC 90% D.U.T 90% VCC Rg 10% td(off) Diode Reverse Recovery Time Test Circuit 10% tf td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 0.5 Irr 0.9 Irr Page 8 of 9 RJH65T14DPQ-A0 Package Dimensions JEDEC Package Code RENESAS Code Previous Code MASS (Typ) [g] TO-247A PRSS0003ZH-A — 6.14 Unit: mm 15.94±0.19 5.02±0.19 3.6±0.1 21.13±0.33 17.86 6.15 Pin No. 4 13.26 4.5 max. 20.19±0.38 2.41 Pin No. 1 2 3 1.27 +− 0.13 0.20 3.12 2.10 +− 0.31 0.20 0.71 +− 0.10 0.16 5.45 5.45 + 0.26 − 0.25 © 2018 Renesas Electronics Corporation. All rights reserved. Ordering Information Orderable Part Number RJH65T14DPQ-A0#T0 R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 Quantity 240 pcs Shipping Container Box (Tube) Page 9 of 9 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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