2SB1188T100Q

Medium power transistor (32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Dimensions (Unit : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 +0.1 0.4−0.05 0.4±0.1 1.5±0.1 1.5 0.65±0.1 0.75 2.3+0.2 −0.1 0.5±0.1 2.5 (2) C0.5 9.5±0.5 6.5±0.2 5.1+0.2 −0.1 5.5+0.3 −0.1 1.6±0.1 (1) Structure Epitaxial planar type PNP silicon transistor +0.2 1.5 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.5±0.3 2SB1188 0.9 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. 0.9 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 3.0±0.2 (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ∗ Abbreviated symbol: BC 2SB1240 2.5±0.2 0.9 0.65Max. 0.5±0.1 (1) (2) 14.5±0.5 1.0 4.4±0.2 6.8±0.2 (3) 2.54 2.54 1.05 ROHM : ATV 0.45±0.1 (1) Emitter (2) Collector (3) Base ∗ Denotes h FE Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage VCBO −40 V Collector-emitter voltage VCEO −32 V Emitter-base voltage VEBO −5 V Parameter IC Collector current A(DC) A (Pulse)∗1 0.5 W 2 W 2SB1182 10 W (Tc=25°C) 2SB1240 1 W 2SB1188 Collector power dissipation −2 −3 PC Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C ∗1 ∗2 ∗3 ∗2 ∗3 Single pulse, Pw=100ms When mounted on a 40×40×0.7 mm ceramic board. Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.12 - Rev.B 2SB1188 / 2SB1182 / 2SB1240 Data Sheet Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −40 − − V Collector-emitter breakdown voltage BVCEO −32 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50μA Collector cutoff current ICBO − − −1 μA VCB= −20V Emitter cutoff current IEBO − − −1 μA VEB= −4V Collector-emitter saturation voltage VCE(sat) − −0.5 −0.8 V IC/IB= −2A/ −0.2A hFE 120 − 390 − Transition frequency fT − 100 − MHz Output capacitance Cob − 50 − pF DC current transfer ratio Conditions IC= −50μA ∗ ∗ VCE= −3V, IC= −0.5A VCE= −5V, IE=0.5A, f=100MHz VCB= −10V, IE=0A, f=1MHz ∗ Measured using pulse current. Packaging specifications and hFE Package Type hFE Taping Code T100 TL TV2 Basic ordering unit (pieces) 1000 2500 2500 − − 2SB1188 QR 2SB1182 QR − 2SB1240 QR − − − hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 Electrical characteristic curves −200 −100 −50 −20 −10 −5 −2 −1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) −1000 Ta=100°C 25°C −500 −40°C Ta=25°C −2.5mA −2mA −0.4 −1.75mA −1.5mA −0.3 −1.25mA −1mA −0.2 −750μA −500μA −0.1 Ta=25°C 500 −2.25mA DC CURRENT GAIN : hFE −0.5 VCE= −3V VCE= −6V −3V −1V 200 100 50 −250μA 0 0 −0.4 −0.8 −1.2 IB=0A −1.6 −2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics 2/3 20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector curren ( ) 2009.12 - Rev.B 200 100 50 20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 −500 Ta=25°C −200 −100 −50 −5 −10 −20 TRANSITION FREQUENCY : fT (MHz) −1 IC /IB=10 −0.5 −0.2 −0.1 Ta=25°C VCE= −5V 500 200 100 50 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 5 10 COLLECTOR CURRENT : IC (A) s∗ 0m =1 ∗ Pw s m 00 =1 Pw COLLECTOR CURRENT : IC (A) −5 IC Max. (pulse) −0.5 D C −0.2 −0.1 −0.05 Ta=25°C ∗Single nonrepetitive pulse −0.01 −0.1 −0.2 −0.5 −1 −0.02 −2 −5 −10 −20 50 100 200 500 1000 2000 −100 −50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operation area (2SB1188) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ −2 IC Max. (Pulse) Ta=100°C 25°C −40°C −50 −20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 Fig.6 Collector-emitter saturation voltage vs. collector current ( ) 300 Ta=25°C f=1MHz IE=0A IC=0A Cib 200 100 Cob 50 20 10 −0.5 −1 −2 −5 −10 −20 −30 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Gain bandwidth product vs. emitter current Fig.7 Base-emitter saturation voltage vs. collector current −1 20 EMITTER CURRENT : IE (mA) COLLETOR CURRENT : IC (mA) −2 −200 COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation voltage vs. collector current ( ) Ta=25°C −5 −50 −100 −200 −500 −1000 −2000 −500 lC/lB=10 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) BASE SATURATION VOLTAGE : VBE(sat)(V) 20 10 COLLECTOR CURRENT : IC (mA) −0.05 IC/IB=50 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) DC CURRENT GAIN : hFE Ta=100°C 25°C −25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) VCE= −3V 500 Data Sheet COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 2SB1188 / 2SB1182 / 2SB1240 Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage PW=500μs DC −1 −0.5 PW=1ms PW=100ms −0.2 −0.1 −0.05 Ta=25°C ∗Single nonrepetitive pulse −0.01 −0.1 −0.2 −0.5 −1 −0.02 −2 −5 −10 −20 −50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.11 Safe operation area (2SB1182) 3/3 2009.12 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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