0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SB1188

2SB1188

  • 厂商:

    RUBYCON(红宝石)

  • 封装:

    SOT89-3

  • 描述:

    晶体管类型:PNP;集射极击穿电压(Vceo):32V;集电极电流(Ic):2A;功率(Pd):500mW;集电极截止电流(Icbo):1uA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):...

  • 数据手册
  • 价格&库存
2SB1188 数据手册
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE 2. COLLECTOR 1 z Low VCE(sat). z Complements the 2SD1766 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -5 V Collector cut-off current ICBO VCB=-20 V , IE=0 -1 μA Emitter cut-off current IEBO VEB=-4 V , IC=0 -1 μA DC current gain * hFE VCE=-3V, IC= -0.5A Collector-emitter saturation voltage * VCE(sat) fT Transition frequency Cob Output capacitance 82 390 IC=-2A, IB= -0.2A -0.8 V VCE=-5V, IC=-0.5A ,f=30MHz 100 MHz VCB=-10V, IE=0 ,f=1MHz 50 pF * Measured using pulse current. CLASSIFICATION OF hFE Rank Range Marking P Q R 82-180 120-270 180-390 BCP BCQ BCR B,Mar,2012 Typical Characteristics Static Characteristic -0.7 —— IC COMMON EMITTER Ta=25℃ DC CURRENT GAIN -1.8mA -0.5 -1.6mA -0.4 -1.4mA -1.2mA -0.3 -1.0mA -0.8mA -0.2 Ta=100℃ hFE -2.0mA (A) IC hFE 1000 -0.6 COLLECTOR CURRENT 2SB1188 Ta=25℃ 100 -0.6mA -0.4mA -0.1 COMMON EMITTER VCE= -3V IB=-0.2mA -0.0 10 -0 -1 -2 -3 -4 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— -6 IC Ta=100 ℃ -10 Ta=25℃ β=10 -1 -10 -100 COLLECTOR CURREMT IC -2000 —— IC -10 -100 VBEsat —— -2000 -100 -1 -5 -1000 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat -1000 -5 VCE (V) -1000 IC Ta=25℃ Ta=100 ℃ (mA) β=10 -1 -10 COLLECTOR CURREMT Cob/Cib VBE —— IC -100 VCB/VEB 300 f=1MHz IE=0/IC=0 Cib (mA) Ta=25 ℃ (pF) 100 CAPACITANCE T= a 25 ℃ ℃ -10 Cob C -100 T= a 10 0 IC -1000 -2000 (mA) -1000 COLLECTOR CURRENT -2000 (mA) -1000 -100 -0.1 -2000 IC 10 -1 COMMON EMITTER VCE= -3V -0.1 -0 -200 -400 -600 -800 -1000 -1200 BASE-EMMITER VOLTAGE VBE (mV) PC COLLECTOR POWER DISSIPATION PC (mW) 600 —— 1 -0.1 -1 REVERSE VOLTAGE -10 V -20 (V) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) 125 150 B,Mar,2012
2SB1188 价格&库存

很抱歉,暂时无法提供与“2SB1188”相匹配的价格&库存,您可以联系我们找货

免费人工找货