2SB1188

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE z Low VCE(sat). z Complements the 2SD1766 2. COLLECTOR 1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipation 500 mW RθJA Thermal Resistance From Junction To Ambient 250 ℃/W 45 ℃/W Thermal Resistance From Junction To Case(TC=25℃) RθJC Operation Junction and Storage Temperature Range TJ,Tstg 2 3 3. EMITTER ℃ -55~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA , IE=0 -40 V Collector-emitter breakdown voltage IC= -1mA , IB 0 V(BR)CEO= -32 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -5 V Collector cut-off current ICBO = VCB=-20 V , IE 0 Emitter cut-off current VEB=-4 V , IC 0 IEBO = DC current gain * hFE VCE(sat) Collector-emitter saturation voltage * fT Transition frequency Cob Output capacitance VCE= -3V, IC= -0.5A 82 -1 μA -1 μA 390 IC=-2A, IB= -0.2A -0.8 V VCE=-5V, IC=-0.5A ,f=30MHz 100 MHz VCB=-10V, IE=0 ,f=1MHz 50 pF * Measured using pulse current. CLASSIFICATION OF hFE Rank Range Marking www.jscj-elec.com P Q R 82-180 120-270 180-390 BCP BCQ BCR 1 Rev. - 2.3 Typical Characteristics Static Characteristic -0.7 COMMON EMITTER Ta=25℃ -0.6 -1.6mA -0.4 -1.4mA -1.2mA -0.3 -1.0mA -0.8mA -0.2 —— IC Ta=100℃ hFE -1.8mA DC CURRENT GAIN COLLECTOR CURRENT IC (A) -2.0mA -0.5 hFE 1000 Ta=25℃ 100 -0.6mA -0.4mA -0.1 COMMON EMITTER VCE= -3V IB=-0.2mA -0 -1 -2 VCEsat -1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -3 -4 COLLECTOR-EMITTER VOLTAGE —— VCE (V) -5 10 -6 IC Ta=100 ℃ -10 Ta=25℃ β=10 -1 -10 COLLECTOR CURREMT IC -2000 —— -100 IC -1000 (mA) -1000 VBEsat —— -2000 (mA) IC Ta=100 ℃ β=10 -1 -10 COLLECTOR CURREMT Cob/Cib VBE IC Ta=25℃ -100 -0.1 -2000 —— IC -100 -1000 -2000 (mA) VCB/VEB 300 f=1MHz IE=0/IC=0 Cib (mA) Ta=25 ℃ (pF) 100 CAPACITANCE T= a 25 ℃ ℃ -10 Cob C -100 T= a 10 0 IC COLLECTOR CURRENT -100 -1000 -1000 10 -1 -0.1 COMMON EMITTER VCE= -3V -0 -200 -400 -600 -800 BASE-EMMITER VOLTAGE VBE (mV) PC 600 COLLECTOR POWER DISSIPATION PC (mW) -10 -2000 -100 -1 -5 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -0.0 —— -1000 -1200 125 150 1 -0.1 -1 REVERSE VOLTAGE V (V) -10 -20 Ta 500 400 300 200 100 0 0 www.jscj-elec.com 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) 2 Rev. - 2.3 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout 1.40 0.5 2.8 1.8 1.50 0 . 80 80 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.3 SOT-89-3L Tape and Reel www.jscj-elec.com 4 Rev. - 2.3