RB095T-40_11

Data Sheet Schottky barrier diode RB095T-40 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 6 100 150 40 to 150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=136C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.55 0.1 3 Unit V mA C/W Conditions IF=3A VR=40V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.E RB095T-40 Electrical characteristic curves 　 Data Sheet 10 Ta=150℃ 1000000 100000 Ta=150℃ Ta=125℃ 1000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) Ta=-25℃ 1 Ta=125℃ Ta=75℃ 0.1 Ta=25℃ 10000 1000 100 10 1 0.1 0.01 Ta=-25℃ Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 40 100 Ta=25℃ 10 0.01 0 100 200 300 400 500 600 700 1 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 500 FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 490 Ta=25℃ IF=3A n=30pcs 200 180 160 140 120 100 80 60 40 20 AVE:14.2uA Ta=25℃ VR=40V n=30pcs 650 640 630 620 610 600 590 580 570 560 550 AVE:617.9pF Ta=25℃ f=1MHz VR=0V n=10pcs 480 470 460 AVE:472.9mV 450 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) 250 200 150 100 50 AVE:178.0A 0 1cyc REVERSE RECOVERY TIME:trr(ns) 25 20 15 10 5 0 trr DISPERSION MAP 8.3ms 8.3ms 8.3ms 1cyc 100 AVE:11.40ns 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 100 10 IM=100mA Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IF=3A PEAK SURGE FORWARD CURRENT:I FSM(A) 10 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 1ms time 300us D=1/2 5 Si(=180) DC 100 1 Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 2 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.E RB095T-40 　 Data Sheet 10 15 0A 0V t DC Io VR 15 0A 0V t Io VR D=t/T VR=20V T Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 REVERSE POWER DISSIPATION:PR (W) 6 DC 4 Sin(=180) D=1/2 10 D=1/2 T D=t/T VR=20V Tj=150℃ DC 10 D=1/2 5 Sin(θ=180) 5 Sin(θ=180) 2 0 0 10 20 30 40 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 AVE:15.6kV 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A