RB095T-60_11

Data Sheet Schottky barrier diode RB095T-60 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 6 (1) (2) (3) Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage(DC) Average rectified forward current (*1) Fprward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 60 60 6 100 150 40 to 150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.58 300 3.0 Unit V A C/W Conditions IF=3A VR=60V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.D RB095T-60 Electrical characteristic curves 10 Ta=150°C 1000000 100000 　 Data Sheet Ta=150°C Ta=125°C Ta=75C 1000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) Ta=125C 1 Ta=75C Ta=25°C Ta=-25°C 10000 1000 100 10 1 0.1 0.01 Ta=-25C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 60 100 Ta=25C 0.1 10 0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 0 10 20 30 40 50 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 550 200 Ta=25C IF=3A n=30pcs 180 Ta=25C VR=60V n=30pcs 800 750 Ta=25C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE : V F(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 540 160 140 120 100 80 60 40 20 AVE:20.8uA 700 650 600 550 500 450 400 350 300 AVE:514.4pF 530 AVE:532.4mV 520 510 500 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) 200 150 AVE:73.0A 100 50 0 8.3ms 20 15 10 5 0 trr DISPERSION MAP AVE:8.30ns PEAK SURGE FORWARD CURRENT:I FSM(A) 250 Ifsm 1cyc 25 1cyc 100 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 Ifsm 100 IM=100mA 10 IF=3A time 300us PEAK SURGE FORWARD CURRENT:I FSM(A) t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1ms FORWARD POWER DISSIPATION:Pf(W) 10 Rth(j-a) D=1/2 5 Sin(θ=180) DC 100 1 Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 2 4 6 8 10 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.D RB095T-60 　 Data Sheet 15 15 0A 0V 15 Io D=t/T VR=30V Tj=150℃ 0A 0V t T Io VR D=t/T VR=30V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC 10 D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t T VR 10 DC D=1/2 REVERSE POWER DISSIPATION:PR (W) 10 Sin(θ=180) D=1/2 5 DC 5 5 Sin(θ =180) Sin(θ =180) 0 0 10 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 60 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(℃) Derating Curve"(Io-Ta) 150 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve"(Io-Tc) 30 No break at 30kV 25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:12.7kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A