RB095T-90_11

Data Sheet Schottky barrier diode RB095T-90 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 9 (1) (2) (3) Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 6 100 150 40 to 150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=127C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.75 150 1.75 Unit V A C/W Conditions IF=3A VR=90V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.D RB095T-90 Electrical characteristic curves 　 Data Sheet 10 100000 10000 Ta=125C Ta=75C Ta=25C Ta=-25C 1000 100 Ta=150C Ta=125C 1000 f=1MHz Ta=75°C CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150C 1 REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) 100 Ta=25C 10 1 0.1 0.01 Ta=-25°C 0.1 10 0.01 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 40 50 60 70 80 90 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 750 Ta=25C IF=10A n=30pcs 200 180 Ta=25C VR=90V n=30pcs 400 390 Ta=25C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(uA) 140 120 100 80 60 40 20 0 AVE:13.7uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 740 160 380 370 360 350 340 330 320 310 300 AVE:357.9pF 730 720 710 AVE:715.7mV 700 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:I FSM(A) 200 150 AVE:86.0A 100 50 0 8.3ms 20 15 10 5 0 AVE:8.30ns PEAK SURGE FORWARD CURRENT:I FSM(A) 250 Ifsm 1cyc REVERSE RECOVERY TIME:trr(ns) 25 1cyc 100 10 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 100 IM=100mA 10 IF=6A 8 1ms PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (C/W) time FORWARD POWER DISSIPATION:Pf(W) 10 300us Rth(j-a) D=1/2 6 Sin(θ=180) 4 DC 100 1 Rth(j-c) 2 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 0 0 2 4 6 8 10 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.D RB095T-90 　 Data Sheet 5 15 0A 0V t T D=1/2 Io 15 0A 0V t T Io VR D=t/T VR=45V Tj=150C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 REVERSE POWER DISSIPATION:PR (W) DC 10 D=t/T VR=45V Tj=150C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR 10 DC D=1/2 3 DC 2 Sin(θ=180) D=1/2 5 Sin(θ=180) 5 Sin(θ=180) 1 0 0 10 20 30 40 50 60 70 80 90 0 0 25 50 75 100 125 150 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(C) Derating Curve"(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(C) Derating Curve"(Io-Tc) 30 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:26.70kV 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:9.60kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A