RGW00TS65DGC11

RGW00TS65D Datasheet 650V 50A Field Stop Trench IGBT Outline VCES 650V IC (100℃) 50A VCE(sat) (Typ.) 1.5V PD 254W Features TO-247N (1)(2)(3) Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching *1 3) Low Switching Loss & Soft Switching (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating ; RoHS Compliant Applications Packaging Specifications PFC Packaging UPS Reel Size (mm) - Tape Width (mm) - Welding Type Solar Inverter IH Tube Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGW00TS65D Absolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 96 A TC = 100°C IC 50 A 200 A Collector Current Pulsed Collector Current Diode Forward Current ICP TC = 25°C IF 56 A TC = 100°C IF 30 A IFP*1 200 A TC = 25°C PD 254 W TC = 100°C PD 127 W Tj 40 to +175 °C Tstg 55 to +175 °C Diode Pulsed Forward Current Power Dissipation *1 Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 1/11 2017.10 - Rev.A Datasheet RGW00TS65D Thermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.59 °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.17 °C/W IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10μA, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA VGE(th) VCE = 5V, IC = 33.0mA 5.0 6.0 7.0 V Tj = 25°C - 1.5 1.9 V Tj = 175°C - 1.85 - Gate - Emitter Threshold Voltage IC = 50A, VGE = 15V Collector - Emitter Saturation Voltage www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/11 2017.10 - Rev.A Datasheet RGW00TS65D IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V - 4200 - Output Capacitance Coes VGE = 0V - 104 - Reverse Transfer Capacitance Cres f = 1MHz - 79 - Total Gate Charge Qg VCE = 400V - 141 - Gate - Emitter Charge Qge IC = 50A - 30 - Gate - Collector Charge Qgc VGE = 15V - 52 - Turn - on Delay Time td(on) IC = 50A, VCC = 400V - 52 - tr VGE = 15V, RG = 10Ω - 21 - Tj = 25°C - 180 - Inductive Load - 33 - Rise Time Turn - off Delay Time Fall Time td(off) tf Turn - on Switching Loss Eon *Eon includes diode - 1.18 - Turn - off Switching Loss Eoff reverse recovery - 0.96 - Turn - on Delay Time td(on) IC = 50A, VCC = 400V - 49 - tr VGE = 15V, RG = 10Ω - 23 - Tj = 175°C - 201 - Inductive Load - 72 - Rise Time Turn - off Delay Time Fall Time td(off) tf Turn - on Switching Loss Eon *Eon includes diode - 1.18 - Turn - off Switching Loss Eoff reverse recovery - 1.18 - Unit pF nC ns mJ ns mJ IC = 200A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 100Ω, Tj = 175°C www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 3/11 2017.10 - Rev.A Datasheet RGW00TS65D FRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.45 1.9 Tj = 175°C - 1.55 - - 95 - ns - 8.1 - A - 0.42 - μC IF = 30A Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 19.3 - μJ Diode Reverse Recovery Time trr - 155 - ns Diode Peak Reverse Recovery Current Irr - 10.4 - A Diode Reverse Recovery Charge Qrr - 0.95 - μC Diode Reverse Recovery Energy Err - 62.5 - μJ www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. IF = 30A VCC = 400V diF/dt = 200A/μs Tj = 25°C IF = 30A VCC = 400V diF/dt = 200A/μs Tj = 175°C 4/11 2017.10 - Rev.A Datasheet RGW00TS65D Electrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 110 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 100 Collector Current : IC [A] Power Dissipation: PD [W] Fig.1 Power Dissipation vs. Case Temperature 90 80 70 60 50 40 30 20 Tj≦175ºC VGE≧15V 10 0 0 25 50 75 100 125 150 0 175 Case Temperature : TC [ºC] 50 75 100 125 150 175 Case Temperature : TC [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 1000 240 1µs 220 200 100 Collector Current : IC [A] Collector Current : IC [A] 25 10µs 10 100µs 1 0.1 Tc=25ºC Single Pulse 10 100 140 120 100 80 60 40 Tj≦175ºC VGE≧15V 0 1000 0 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 160 20 0.01 1 180 200 400 600 800 Collector To Emitter Voltage : VCE[V] 5/11 2017.10 - Rev.A Datasheet RGW00TS65D Electrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 200 180 Tj=25ºC 160 VGE=20V 140 VGE=15V VGE=10V 100 80 VGE=8V 60 40 80 60 4 VGE=8V 40 0 3 VGE=10V 100 0 2 VGE=12V VGE=15V 120 20 0 5 1 2 3 4 5 Collector To Emitter Voltage : VCE [V] Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 100 Collector To Emitter Saturation Voltage : VCE (sat) [V] VCE=10V 90 Collector Current : IC [A] 140 20 1 VGE=20V 160 VGE=12V 120 0 Tj=175ºC 180 Collector Current : IC [A] Collector Current : IC [A] 200 80 70 60 50 40 30 Tj=175ºC 20 Tj=25ºC 10 0 0 2 4 6 8 10 3 IC=100A 2 IC=50A IC=25A 1 0 25 12 Gate to Emitter Voltage : VGE [V] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. VGE=15V 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 6/11 2017.10 - Rev.A Datasheet RGW00TS65D Electrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Collector To Emitter Saturation Voltage : VCE (sat) [V] Collector To Emitter Saturation Voltage : VCE (sat) [V] 20 Tj=25ºC 15 IC=100A 10 IC=50A IC=25A 5 0 5 10 15 Tj=175ºC 15 IC=100A 10 IC=50A IC=25A 5 0 20 5 10 Gate to Emitter Voltage : VGE [V] 20 Gate to Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current Fig.12 Typical Switching Time vs. Gate Resistance 1000 1000 td(off) 100 Switching Time [ns] td(off) Switching Time [ns] 15 tf td(on) 10 tr tf 100 td(on) tr 10 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive load VCC=400V, IC=50A VGE=15V, Tj=175ºC Inductive load 1 1 0 0 10 20 30 40 50 60 70 80 90 100 Collector Current : IC [A] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Resistance : RG [Ω] 7/11 2017.10 - Rev.A Datasheet RGW00TS65D Electrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Eoff 1 Eon 0.1 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive load Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 Eoff 1 Eon 0.1 VCC=400V, IC=50A VGE=15V, Tj=175ºC Inductive load 0.01 0.01 0 0 10 20 30 40 50 60 70 80 90 100 10 30 40 50 Gate Resistance : RG [Ω] Collector Current : IC [A] Fig.15 Typical Capacitance vs. Collector To Emitter Voltage Fig.16 Typical Gate Charge 15 Cies 1000 Coes 100 Cres 10 f=1MHz VGE=0V Tj=25ºC 1 0.01 Gate to Emitter Voltage : VGE [V] 10000 Capacitance [pF] 20 10 5 VCC=400V IC=50A Tj=25ºC 0 0.1 1 10 0 100 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 20 40 60 80 100 120 140 160 Gate Charge : Qg[nC] 8/11 2017.10 - Rev.A Datasheet RGW00TS65D Electrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current 200 400 Reverse Recovery Time : trr [ns] Forward Current : IF [A] 180 160 140 120 100 80 Tj=25ºC 60 40 Tj=175ºC 20 0 0 1 2 3 4 300 Tj=175ºC 200 100 Tj=25ºC 0 5 0 10 20 30 40 50 60 70 80 90 100 Forward Current : IF [A] Forward Voltage : VF[V] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current Fig.20 Typical Diode Reverse Recovery Charge 2.5 15 Tj=175ºC 10 Tj=25ºC 5 VCC=400V diF/dt=200A/μs Inductive load Reverse Recovery Charge : Qrr [μC] 20 Reverse Recovery Curren : Irr [A] VCC=400V diF/dt=200A/μs Inductive load VCC=400V diF/dt=200A/μs Inductive load 2 1.5 Tj=175ºC 1 0.5 Tj=25ºC 0 0 0 0 10 20 30 40 50 60 70 80 90 100 Forward Current : IF [A] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 60 70 80 90 100 Forward Current : IF [A] 9/11 2017.10 - Rev.A Datasheet RGW00TS65D Electrical Characteristic Curves Fig.21 Typical IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 1 D= 0.5 0.2 0.1 0.1 Single Pulse PDM 0.01 0.01 t1 0.02 C1 389.3u 0.05 0.001 1E-6 1E-5 1E-4 C2 765.9u C3 R1 R2 R3 1.563m 75.09m 65.80m 228.9m 1E-3 t2 Duty=t1/t2 Peak Tj=PDM×ZthJCTC 1E-2 1E-1 1E+0 Pulse Width : t1[s] Fig.22 Typical Diode Transient Thermal Impedance 1 Transient Thermal Impedance : ZthJC [ºC/W] D= 0.5 0.2 0.1 0.1 Single Pulse 0.01 PDM 0.01 t1 0.02 0.05 0.001 1E-6 C1 C2 356.0u 1.250m 1E-5 1E-4 C3 R1 R2 R3 6.974m 172.8m 273.3m 273.9m 1E-3 1E-2 t2 Duty=t1/t2 Peak Tj=PDM×ZthJCTC 1E-1 1E+0 Pulse Width : t1[s] www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 10/11 2017.10 - Rev.A Datasheet RGW00TS65D Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% Fig.23 Inductive Load Circuit IC 10% td(on) tr ton IF td(off) tf toff trr , Qrr VCE diF/dt 10% Eon Irr Fig.25 Diode Reverce Recovery Waveform www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. Eoff VCE(sat) Fig.24 Inductive Load Waveform 11/11 2017.10 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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