SCT3060ALGC11

SCT3060AL Datasheet N-channel SiC power MOSFET lOutline VDSS 650V RDS(on) (Typ.) 60mW ID 39A PD 165W TO-247N (1)(2)(3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery 4) Easy to parallel lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating ; RoHS compliant Reel size (mm) - Tape width (mm) - Type lApplication Basic ordering unit (pcs) ・Solar inverters Taping code ・DC/DC converters 30 C11 Marking SCT3060AL ・Switch mode power supplies ・Induction heating ・Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Value Unit VDSS 650 V Tc = 25°C ID *1 39 A Tc = 100°C ID *1 27 A ID,pulse *2 97 A VGSS -4 to +22 V -4 to +26 V 0 / +18 V Tj 175 °C Tstg -55 to +175 °C Pulsed drain current Gate - Source voltage (DC) Gate-Source Surge Voltage (tsurge < 300nsec) VGSS_surge Recommended Drive Voltage VGS_op Junction temperature Range of storage temperature www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 Symbol 1/12 *4 *3 TSQ50211-SCT3060AL 14.Jun.2018 - Rev.005 Datasheet SCT3060AL lThermal resistance Values Parameter Symbol RthJC Thermal resistance, junction - case Unit Min. Typ. Max. - 0.70 0.91 C/W lElectrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions Unit Min. Typ. Max. 650 - - V Tj = 25°C - 1 10 mA Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 650V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA 2.7 - 5.6 V - 60 78 mW Tj = 125°C - 79.2 - f = 1MHz, open drain - 12 - Gate threshold voltage VGS (th) VDS = 10V, ID = 6.67mA VGS = 18V, ID = 13A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 RDS(on) *5 Tj = 25°C RG 2/12 W TSQ50211-SCT3060AL 14.Jun.2018 - Rev.005 Datasheet SCT3060AL lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 13A - 4.9 - Input capacitance Ciss VGS = 0V - 852 - Output capacitance Coss VDS = 500V - 55 - Reverse transfer capacitance Crss f = 1MHz - 24 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 300V - 126 - Turn - on delay time td(on) *5 VDD = 300V, ID = 13A - 19 - VGS = 18V/0V - 37 - td(off) *5 RL = 23W - 34 - tf *5 RG = 0W - 21 - - 70 - Rise time tr Turn - off delay time Fall time Turn - on switching loss Turn - off switching loss *5 Eon *5 Eoff *5 S pF pF ns VDD = 300V, ID=13A VGS = 18V/0V RG = 0W L=500mH *Eon includes diode reverse recovery mJ - 10 - lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *5 VDD = 300V - 58 - Gate - Source charge Qgs *5 ID = 13A - 15 - Gate - Drain charge Qgd VGS = 18V - 23 - VDD = 300V, ID = 13A - 9.6 - Gate plateau voltage www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 *5 V(plateau) 3/12 nC V TSQ50211-SCT3060AL 14.Jun.2018 - Rev.005 Datasheet SCT3060AL lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Inverse diode continuous, forward current Symbol IS Conditions *1 Unit Min. Typ. Max. - - 39 A - - 97 A - 3.2 - V - 15 - ns - 55 - nC - 8 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 Reverse recovery charge Qrr *5 Peak reverse recovery current Irrm VGS = 0V, IS = 13A IF = 13A, VR = 300V di/dt = 1100A/ms *5 *1 Limited only by maximum temperature allowed. *2 PW  10ms, Duty cycle  1% *3 Example of acceptable Vgs waveform *4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50211-SCT3060AL 14.Jun.2018 - Rev.005 Datasheet SCT3060AL lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 180 1000 Operation in this area is limited by RDS(ON) PW = 100µs 140 100 Drain Current : ID [A] Power Dissipation : PD [W] 160 120 100 80 60 40 10 PW = 1ms PW = 10ms PW = 100ms 1 Ta = 25ºC Single Pulse 20 0.1 0 0 50 100 150 0.1 200 Case Temperature : TC [°C] 1 10 100 1000 Drain - Source Voltage : VDS [V] Transient Thermal Resistance : Rth [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 1 0.1 0.01 Ta = 25ºC Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50211-SCT3060AL 14.Jun.2018 - Rev.005 Datasheet SCT3060AL lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 20 40 20V 20V 18V 18V Ta = 25ºC Pulsed 16V Drain Current : ID [A] Drain Current : ID [A] 30 14V 20 12V 10 Ta = 25ºC Pulsed 10V 14V 16V 15 10 12V 10V 5 VGS= 8V VGS= 8V 0 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 150ºC Typical Output Characteristics(I) Fig.7 Tj = 150ºC Typical Output Characteristics(II) 20 40 20V 18V 20V 18V 14V Ta = 150ºC Pulsed 16V 30 12V 10V 20 10 VGS= 8V 14V 16V 15 Drain Current : ID [A] Drain Current : ID [A] 1 10V 12V 10 VGS= 8V 5 Ta = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/12 TSQ50211-SCT3060AL 14.Jun.2018 - Rev.005 Datasheet SCT3060AL lElectrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 40 100 VDS = 10V Pulsed VDS = 10V Pulsed Drain Current : ID [A] Drain Current : ID [A] 10 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 30 20 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 10 0 0.01 0 2 4 6 8 0 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 6 8 10 12 14 16 18 20 Fig.11 Transconductance vs. Drain Current 10 6 VDS = 10V ID = 6.67mA 5 VDS = 10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 4 Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature 4 3 2 1 0 -50 2 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0 50 100 150 0.1 200 Junction Temperature : Tj [ºC] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 10 Drain Current : ID [A] 7/12 TSQ50211-SCT3060AL 14.Jun.2018 - Rev.005 Datasheet SCT3060AL lElectrical characteristic curves Fig.12 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 0.24 Ta = 25ºC Pulsed 0.2 0.16 ID = 26A 0.12 ID = 13A 0.08 0.04 0 6 8 10 12 14 16 18 20 22 Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] 0.24 Gate - Source Voltage : VGS [V] 0.2 VGS = 18V Pulsed 0.16 0.12 ID = 26A 0.08 ID = 13A 0.04 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [W] 1 0.1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC VGS = 18V Pulsed 0.01 1 10 100 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 8/12 TSQ50211-SCT3060AL 14.Jun.2018 - Rev.005 Datasheet SCT3060AL lElectrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 Coss Stored Energy 10 10000 Ciss 1000 Capacitance : C [pF] Coss Stored Energy : EOSS [mJ] Ta = 25ºC Coss 100 Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 5 0 1 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 200 300 400 Drain - Source Voltage : VDS [V] Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 10000 20 1000 Gate - Source Voltage : VGS [V] Ta = 25ºC VDD = 300V VGS = 18V RG = 0W Pulsed tf Switching Time : t [ns] 100 100 td(off) tr 10 td(on) 1 Ta = 25ºC VDD = 300V ID = 13A Pulsed 15 10 5 0 0.1 1 10 100 0 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 20 40 60 Total Gate Charge : Qg [nC] 9/12 TSQ50211-SCT3060AL 14.Jun.2018 - Rev.005 Datasheet SCT3060AL lElectrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 600 Ta = 25ºC ID=13A VGS = 18V/0V RG=0W L=500mH 100 Switching Energy : E [mJ] Switching Energy : E [mJ] 150 Eon 50 Ta = 25ºC VDD=300V VGS = 18V/0V RG=0W L=500mH 400 Eon 200 Eoff Eoff 0 0 100 200 300 400 0 500 Drain - Source Voltage : VDS [V] 20 40 Drain Current : ID [A] Fig.21 Typical Switching Loss vs. External Gate Resistance Switching Energy : E [mJ] 600 Ta = 25ºC VDD=300V ID=13A VGS = 18V/0V L=500mH 400 Eon 200 Eoff 0 0 5 10 15 20 25 30 External Gate Resistance : RG [W] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50211-SCT3060AL 14.Jun.2018 - Rev.005 Datasheet SCT3060AL lElectrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 VGS = 0V Pulsed 10 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0.01 Ta = 25ºC di / dt = 1100A / us VR = 300V VGS = 0V Pulsed 100 10 0 1 2 3 4 5 6 7 8 1 Source - Drain Voltage : VSD [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10 100 Inverse Diode Forward Current : IS [A] 11/12 TSQ50211-SCT3060AL 14.Jun.2018 - Rev.005 Datasheet SCT3060AL lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/12 TSQ50211-SCT3060AL 14.Jun.2018 - Rev.005 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. 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