2SB1189

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 SOT-89-3L TRANSISTOR (PNP) 1. BASE FEATURES z High breakdown voltage z Complements to 2SD1767 2. COLLECTOR 1 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA,IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.5 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 μA DC current gain hFE VCE=-3V,IC=-100mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance 82 390 IC=-500mA,IB=-50mA VCE=-10V,IC=-50mA,f=100MHz -0.4 100 V MHz VCB=-10V,IE=0,f=1MHz 20 pF CLASSIFICATION OF hFE Rank Range Marking P Q R 82-180 120-270 180-390 BDP BDQ BDR B,Aug,2012 Typical Characteristics IC —— 2SB1189 VCE -140 HFE —— IC 1000 COMMON EMITTER Ta=25℃ -0.5mA hFE -0.4mA -0.35mA -80 -0.3mA -0.25mA -60 -0.2mA -40 Ta=25℃ DC CURRENT GAIN COLLECTOR CURRENT Ta=100℃ -0.45mA -100 IC (mA) -120 -0.15mA 100 -0.1mA -20 COMMON EMITTER VCE= -3V IB=-0.05mA -0 10 -0 -1 -2 -3 -4 COLLECTOR-EMITTER VOLTAGE VCEsat —— -5 -6 -1 IC -700 -100 VBEsat —— IC (mA) IC -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -10 COLLECTOR CURRENT VCE (V) -100 Ta=100 ℃ -800 Ta=25℃ -600 Ta=100 ℃ -400 Ta=25℃ β=10 -10 -1 -10 COLLECTOR CURRENT IC —— IC β=10 -700 -100 -1 -10 (mA) COLLECTOR CURREMT VBE Cob/Cib 1000 -700 -700 -100 —— IC (mA) VCB/VEB Ta=25 ℃ (pF) -100 100 Cib CT CAPACITANCE 00 ℃ -10 Ta= 2 5℃ Ta= 1 COLLECTOR CURRENT IC (mA) f=1MHz IC=0/IE=0 -1 Cob 10 COMMON EMITTER VCE= -3V -0.1 -300 1 -400 -500 -600 -700 -800 -900 -1000 -1 Pc IC —— VCB/VEB (V) Ta 600 100 TRANSITION FREQUENCY fT (MHz) —— COLLECTOR POWER DISSIPATION Pc (mW) fT 200 -30 -10 COLLECTOR-BASE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) COMMON EMITTER VCE=-10V Ta=25℃ 10 400 200 0 -10 COLLECTOR CURRENT -100 IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150 B,Aug,2012