BAV16W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W SOD-123 FAST SWITCHING DIODES FEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High Conductance + - MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter BAV16W Symbol Non-Repetitive Peak Reverse Voltage VRM Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 1N4148W Unit 100 V 75 V 52.5 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA Peak Forward Surge Current @t=1.0μs @t =1.0s Power Dissipation Thermal Resistance from Junction to Ambient 2.0 IFSM A 1.0 Pd 00 50 mW RθJA 312 357 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature TSTG -55~+150 ℃ Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1.0 V IF=50mA VF4 1.25 V IF=150mA IR1 1 μA VR=75V IR2 25 nA VR=20V Capacitance between terminals CT 2 pF VR=0V,f=1MHz Reverse recovery time trr 4 ns Forward voltage Reverse current IF=IR=10mA Irr=0.1XIR,RL=100Ω %'HF,2011 Typical Characteristics 100 3000 (nA) 10000 T= a 2 5℃ 10 REVERSE CURRENT IR 30 T= a 1 00 ℃ FORWARD CURRENT Characteristics 300 IF (mA) Forward BAV16W/1N4148W 3 1 0.3 Reverse Characteristics Ta=100℃ 1000 300 100 Ta=25℃ 30 10 3 0.1 0.0 1 0.4 0.8 1.2 FORWARD VOLTAGE VF 1.6 0 20 (V) 40 60 REVERSE VOLTAGE 80 VR 100 (V) Power Derating Curve Capacitance Characteristics 1.6 500 (mW) f=1MHz 1.4 BAV16W 400 PD 1N4148W 1.2 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 1.0 0.8 0.6 300 200 100 0 0 4 8 12 REVERSE VOLTAGE 16 VR (V) 20 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta (℃) 150