CJU12P06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU12P06 P-Channel Power MOSFET ID RDS(on)TYP V(BR)DSS  75mΩ @-10V -60V TO-252-2L -12A  90mΩ@-4.5V GENERAL DESCRIPTION The CJU12P06 provide excellent RDS(ON), low gate charge and 2 1. GATE 2. DRAIN 3. SOURCE operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURE Excellent package for good heat dissipation z Ultra low gate charge z z Low reverse transfer capacitance Fast switching capability z z Avalanche energy specified APPLICATION z Power switching application MARKING EQUIVALENT CIRCUIT U12P06 XXXX 3 U12P06 = Device code. Solid dot = Green molding compound device if none, the normal device. XXXX = Code. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID ① -12 A Pulsed Drain Current IDM ② -30 A EAS ③ 100 mJ PD ① Single Pulsed Avalanche Energy Power Dissipation Thermal Resistance from Junction to Ambient Thermal Resistance from Junction to Case W RθJA 100 ℃/W RθJC ① 2.5 ℃/W -55~+150 ℃ TJ ,Tstg Operating Junction and Storage Temperature Range www.jscj-elec.com 50 ⑥ 1 Rev. - 2.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate-body leakage current IGSS VDS =0V, VGS =±20V Gate-threshold voltage VGS(th) VDS =VGS, ID =-250µA Static drain-source on-sate resistance RDS(on) On characteristics VGS = 0V, ID =-250µA V -60 VDS =-48V, TJ =25℃ -1 VGS =0V TJ =125℃ -50 µA ±100 nA -1.8 -3.0 V VGS =-10V, ID =-8A 75 96 mΩ VGS =-4.5V, ID =-8A 90 150 mΩ 900 1600 115 200 40 78 18 35 3.2 6.0 ④ -1.0 ④⑤ Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Switching characteristics VDS =-25V,VGS =0V, f =1MHz Crss pF ④⑤ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 3.8 7.7 Turn-on delay time td(on) 8 16 Turn-on rise time Turn-off delay time Turn-off fall time VGS=-10V, VDS=-20V, ID=-4A tr VDD=-30V,ID=-1A, 6 12 td(off) VGS=-10V,RG=2.5Ω, 30 60 7 15 RL=15Ω tf nC ns Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD ④ IS ① ISM ② VGS =0V, IS=-12A -1.2 V -12 A -30 A Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=-30V,VGS=-10V, L=0.5mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25℃. www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Transfer Characteristics Output Characteristics -12 -12 TJ=25℃ VGS=-10V,-8V,-6V,-4V Pulsed -10 -10 (A) (A) VGS=-3.5V ID DRAIN CURRENT DRAIN CURRENT ID -8 -6 VGS=-3V -4 -2 0 VDS=-8V Pulsed -8 TJ=25℃ -6 -4 -2 0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE VDS 0 -5 0 -2 (V) -4 GATE TO SOURCE VOLTAGE -6 VGS (V) RDS(ON)—— VGS RDS(ON) —— ID 120 200 TJ=25℃ ID=-8A Pulsed Pulsed 100 (m) VGS= -10V ON-RESISTANCE ON-RESISTANCE 80 RDS(ON) RDS(ON) (m) 160 VGS= -4.5V 60 40 20 -5 -6 -7 DRAIN CURRENT -8 -9 ID 80 TJ=25℃ 40 0 -10 TJ=125℃ 120 0 -2 -4 -6 -8 -10 GATE TO SOURCE VOLTAGE (A) IS —— VSD VGS -12 -14 (V) Threshold Voltage -20 -3 Pulsed Pulsed VTH TJ=125℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) -10 TJ=25℃ -1 -0.1 -1 -0.2 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -2 -1 0 25 -2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 2.0 Typical Characteristics Normalized Maximum Transient Thermal Impedance 10 In descending order Normalized Effective Transient Thermal Impedance D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 RθJC=2.5℃/ W D=Ton/T TJ,PK=TC+PDM×ZθJC×RθJC 0.1 0.01 0.00001 0.0001 0.01 0.001 0.1 1 10 100 Square Wave Pluse Duration (sec) -100 Maximum Forward Biased Safe Operating Area -10 DS ON lim ite d 10us R DRAIN CURRENT ID (A) IDM 100us -1 1ms 10ms -0.1 -0.1 TC=25℃ Mounted on FR4 board (25.4mm×25.4mm×t1.0mm) Single Pulse -1 DRAIN TO SOURCE VOLTAGE www.jscj-elec.com DC BVdss -100 -10 VDS (V) 4 Rev. - 2.0 TO-252-2L Package Outline Dimensions D A D1 c V L3 h E φ L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 1.100 1.300 0° 8° 0.000 0.300 5.250 REF. Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0.043 0.051 0° 8° 0.000 0.012 0.207 REF. TO-252-2L Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 2.0 TO-252-2L Tape and Reel www.jscj-elec.com 6 Rev. - 2.0