CJU30P10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU30P10 P-Channel Power MOSFET ID RDS(on)TYP V(BR)DSS 38mΩ@-10V -100V TO-252-2L -30A 41mΩ@-4.5V GENERAL DESCRIPTION The CJU30P10 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. FEATURE  Advanced trench process technology  Reliable and rugged  High density cell design for ultra low On-Resistance 1 3 APPLICATION  Power management in notebook computer  Portable equipment and battery powered systems EQUIVALENT CIRCUIT MARKING  2 1. GATE 2. DRAIN 3. SOURCE U30P10 = Device code. Solid dot = Green molding compound device. if none, the normal device. XXXX = Code. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V ① Continuous Drain Current ID -30 A Pulsed Drain Current IDM② -120 A Single Pulsed Avalanche Energy EAS③ 240 mJ Power Dissipation PD 108 W 100 ℃/W 1.15 ℃/W -55 ~+150 ℃ RθJA⑥ Thermal Resistance from Junction to Ambient Thermal Resistance from Junction to Case RθJC Junction Temperature and Storage Temperature Range www.jscj-elec.com ① ① TJ Tstg 1 Rev. - 2.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Test Condition Symbol Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA V VDS =-80V, TJ =25℃ -1.0 VGS =0V TJ =125℃ -100 Zero gate voltage drain current IDSS Gate-body leakage current IGSS VDS =0V, VGS =±20V VGS(th) VDS =VGS, ID =-250µA RDS(on) RDS(on) On characteristics -100 µA ±100 nA -1.5 -2.5 V VGS =-10V, ID =-15A 38 45 mΩ VGS =-4.5V, ID =-15A 41 55 mΩ 6315 12630 220 440 50 100 ④ Gate-threshold voltage Static drain-source on-sate resistance -1 ④⑤ Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VDS =-20V,VGS =0V, f =1MHz f =1MHz 5.7 pF Ω ④⑤ Switching characteristics Total gate charge Qg VDS=-20V, VGS=-10V, 98 196 16.2 32 28 Gate-source charge Qgs Gate-drain charge Qgd 13.8 Turn-on delay time td(on) 10 Turn-on rise time Turn-off delay time Turn-off fall time ID=-12A tr td(off) VDD=-20V,VGS=-10V, 18 RG=3Ω, ID=-20A 38 nC ns 24 tf Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current ④ VSD IS VGS =0V, IS=-10A -1.2 V -30 A -120 A ① ② ISM Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=-50V,VGS=-10V, L=0.5mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25℃. www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Transfer Characteristics Output Characteristics -40 -20 TJ=25℃ VDS=-5V Pulsed Pulsed VGS=-10V,-8V,-6V,-4V,-3.5V (A) -15 ID DRAIN CURRENT DRAIN CURRENT ID (A) -30 VGS=-3V -20 -10 TJ=25℃ -10 -5 0 0 0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE -5 VDS -6 0 (V) -1 -2 -3 -4 GATE TO SOURCE VOLTAGE VGS RDS(ON)—— VGS RDS(ON) —— ID 100 45 TJ=25℃ Pulsed VGS= -4.5V (m) VGS= -10V RDS(ON) (m) ON-RESISTANCE RDS(ON) ID=-15A Pulsed 90 40 ON-RESISTANCE -5 (V) 35 80 70 TJ=125℃ 60 50 TJ=25℃ 40 30 30 20 -5 -6 -8 -10 DRAIN CURRENT -12 ID -14 0 -15 (A) -2 -4 -6 -8 GATE TO SOURCE VOLTAGE IS —— VSD VGS Threshold Voltage -2.5 -60 (V) Pulsed -2.0 VTH -10 TJ=125℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) Pulsed TJ=25℃ -1 -0.1 -0.1 -1 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -10 (V) -1.5 -1.0 -0.5 0.0 25 -2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 2.0 TO-252-2L Package Outline Dimensions D A D1 c V L3 h E φ L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 1.100 1.300 0° 8° 0.000 0.300 5.250 REF. Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0.043 0.051 0° 8° 0.000 0.012 0.207 REF. TO-252-2L Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 TO-252-2L Tape and Reel www.jscj-elec.com 5 Rev. - 2.0