M8050

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T M8050 SOT-23 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 800 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 μA Collector cut-off current ICEO VCE= 20V, IB=0 0.1 μA hFE(1) VCE=1V, IC=5mA 45 hFE(2) VCE=1V, IC=100mA 80 hFE(3) VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V DC current gain Transition frequency fT VCE=6V, IC= 20mA , f=30MHz 400 150 MHz * Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%. CLASSIFICATION OF hFE(2) Rank Range www.cj-elec.com L H 80-300 300-400 1 C,Oct,2014 A,Jun,2014 Typical Characteristics Static Characteristic 400 COMMON EMITTER Ta=25℃ COLLECTOR CURRENT DC CURRENT GAIN 640uA 560uA 480uA 200 IC —— Ta=100℃ hFE 720uA IC (mA) 800uA 300 hFE 1000 400uA 320uA Ta=25℃ 100 240uA 100 160uA COMMON EMITTER VCE=1V IB=80uA 0 10 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCE 5 1 10 100 COLLECTOR CURRENT (V) VBEsat —— (mA) IC 1200 1000 1000 IC β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 100 Ta=100℃ Ta 10 1 1 10 100 COLLECTOR CURRENT Cob / Cib 100 —— IC 800 Ta=25℃ 600 Ta=100℃ 400 200 0.1 1000 VCB / VEB 10 fT 1000 100 —— IC 1000 (mA) IC (MHz) Ta=25℃ C TRANSITION FREQUENCY (pF) fT Cib 1 COLLECTOR CURRENT (mA) f=1MHz IE=0 / IC=0 CAPACITANCE 1000 10 Cob 100 VCE=6V Ta=25℃ 1 0.1 1 10 REVERSE BIAS VOLTAGE PC COLLECTOR POWER DISSIPATION PC (mW) 250 —— V 10 20 1 (V) 40 10 COLLECTOR CURRENT IC (mA) Ta 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 C,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 C,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 C,Oct,2014 A,Jun,2014