SMG2340NE

SMG2340NE Elektronische Bauelemente 5.2 A, 40 V, RDS(ON) 43 m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. K A 3 3 L Top View 1 2 CB 1 2 E D FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. F G H J REF. A B C D E F PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA=25°C TA=70°C VDS VGS ID IDM IS PD TJ, TSTG 40 ±20 5.2 4.1 30 1.6 1.3 0.8 -55 ~ 150 100 166 Unit V V A A A W °C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 TA=25°C Power Dissipation 1 TA=70°C Operating Junction and Storage Temperature Range t≦5 sec Steady-State Thermal Resistance Data Maximum Junction to Ambient 1 Notes 1. 2. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. RθJA °C/W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Dec-2010 Rev. A Page 1 of 2 SMG2340NE Elektronische Bauelemente 5.2 A, 40 V, RDS(ON) 43 m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage VGS(th) IGSS IDSS ID(ON) RDS(ON) gFS VSD 1 20 40 0.7 ±10 1 25 43 50 V μA μA A mΩ S V VDS = VGS, ID = 250μA VDS = 0V, VGS= 20V VDS = 32V, VGS= 0V VDS = 32V, VGS= 0V, TJ=55°C VDS = 5V, VGS= 10V VGS= 10V, ID = 5.2A VGS= 4.5V, ID = 4.2A VDS= 15V,,ID = 5.2A IS= 2.3A, VGS= 0V Typ Max Unit Test Conditions Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes 1. 2. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf - 4.0 1.1 1.4 16 5 23 3 nS nC ID= 5.2A VDS= 15V VGS= 4.5V ID= 1A, VDD= 25V VGEN= 10V RL= 25Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Dec-2010 Rev. A Page 2 of 2