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GP10NC60H

GP10NC60H

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    GP10NC60H - N-channel 10A - 600V - TO-220 Very fast PowerMESH TM IGBT - STMicroelectronics

  • 数据手册
  • 价格&库存
GP10NC60H 数据手册
STGP10NC60H N-channel 10A - 600V - TO-220 Very fast PowerMESH™ IGBT General features Type STGP10NC60H ■ ■ ■ VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V 10A Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode TO-220 3 1 2 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. Internal schematic diagram Applications ■ ■ ■ High frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drivers Order codes Part number STGP10NC60H Marking GP10NC60H Package TO-220 Packaging Tube October 2006 Rev 2 1/13 www.st.com 13 Contents STGP10NC60H Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits ............................................... 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STGP10NC60H Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC(1) IC(1) ICL(2) VGE PTOT Tstg Tj Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25°C Collector current (continuous) at TC = 100°C Collector current (pulsed) Gate-emitter voltage Total dissipation at TC = 25°C Storage temperature – 55 to 150 Operating junction temperature °C Value 600 20 10 40 ±20 60 Unit V A A A V W 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R ×V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp=480V, Tj=150°C, RG=10Ω, VGE=15V Table 2. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Value 2.08 62.5 Unit °C/W °C/W 3/13 Electrical characteristics STGP10NC60H 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) gfs Static Parameter Collector-emitter breakdown voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Gate threshold voltage Test conditions IC= 1mA, VGE= 0 VCE= Max rating,TC= 25°C VCE=Max rating,TC= 125°C VGE= ±20V , VCE= 0 VCE= VGE, IC= 250 µA 5 1.9 1.7 3.5 Min. 600 150 1 ±100 5.75 2.5 Typ. Max. Unit V µA mA nA V V V S Collector-emitter saturation VGE= 15V, IC= 5A voltage VGE= 15V, IC= 5A, Tc= 125°C Forward transconductance VCE = 15V, IC= 5A Table 4. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 5A, VGE = 15V, (see Figure 16) Min. Typ. 365 43 8.3 19.2 4.5 7 Max. Unit pF pF pF nC nC nC 4/13 STGP10NC60H Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390V, IC = 5A , RG= 10Ω VGE= 15V, (see Figure 17) VCC = 390V, IC = 5A , RG= 10Ω VGE= 15V, Tj=125°C (see Figure 17) Vcc = 390V, IC = 5A, RGE = 10Ω , VGE = 15V, (see Figure 17) Vcc = 390V, IC = 5A, RGE=10Ω , VGE =15V, Tj=125°C (see Figure 17) Min. Typ. 14.2 5 1000 14 5 920 27 72 85 50 108 139 Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 75A , RG= 10Ω VGE=15V, Tj=25°C (see Figure 17) VCC = 390V, IC = 5A , RG= 10Ω VGE= 15V, Tj= 125°C (see Figure 17) Min. Typ. 31.8 95 126.8 Max. Unit µJ µJ µJ Turn-on switching losses Turn-off switching Losses Total switching losses 61.8 173 234.8 µJ µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in (see Figure 16). If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/13 Electrical characteristics STGP10NC60H 2.1 Figure 1. Electrical characteristics (curves) Output characterisics Figure 2. Transfer charactristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations 6/13 STGP10NC60H Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Electrical characteristics Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/13 Electrical characteristics Figure 13. Thermal Impedance Figure 14. Turn-off SOA STGP10NC60H 8/13 STGP10NC60H Test circuits 3 Test circuits Figure 16. Gate charge test circuit Figure 15. Test circuit for inductive load switching Figure 17. Switching waveform 9/13 Package mechanical data STGP10NC60H 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGP10NC60H Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 11/13 Revision history STGP10NC60H 5 Revision history Table 7. Date 18-Nov-2005 12-Oct-2006 Revision history Revision 1 2 Initial release. New template, complete version Changes 12/13 STGP10NC60H Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13
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