GP19NC60S

STGP19NC60S N-channel 600V - 20A - TO-220 Medium frequency PowerMESH™ IGBT Features Type STGP19NC60S ■ ■ ■ ■ ■ VCES 600V VCE(sat) (typ)@150°C < 1.35V IC @100°C 20A 3 1 2 Very low on-voltage drop (VCE(sat)) High input impedance (voltage driven) IGBT co-packaged with ultrafast freewheeling diode. Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies. Figure 1. TO-220 Application ■ Internal schematic diagram Medium frequency motor control Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order code Marking GP19NC60S Package TO-220 Packaging Tube STGP19NC60S September 2007 Rev 3 1/14 www.st.com Contents STGP19NC60S Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/14 STGP19NC60S Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC(1) IC(1) ICP (2) VGE PTOT Tj Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25°C Collector current (continuous) at TC = 100°C Pulsed collector current Gate-emitter voltage Total dissipation at TC = 25°C Operating junction temperature Value 600 50 20 80 ±20 125 – 55 to 150 Unit V A A A V W °C 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R ×V (T , I ) THJ – C CESAT ( MAX ) C C 2. Pulsed: width limited by max junction temperature allowed Table 2. Symbol Rthj-case Rthj -amb Thermal resistance Parameter Thermal resistance junction-case max IGBT Thermal resistance junction-ambient max Value 1 62.5 Unit °C/W °C/W 3/14 Electrical characteristics STGP19NC60S 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs Static Parameter Collector-emitter breakdown voltage Test conditions IC= 1mA, VGE= 0 Min. 600 1.55 1.35 3.75 1.9 Typ. Max. Unit V V V V µA mA nA S Collector-emitter saturation VGE= 15V, IC= 12A voltage VGE= 15V, IC=12A,Tc=150°C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250 µA VCE= Max rating,TC= 25°C VCE= Max rating,TC= 150°C VGE= ±20V, VCE= 0 VCE = 15V, IC= 12A 5.75 150 1 ±100 10 Table 4. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 480V, IC = 12A, VGE = 15V, Figure 17 Min. Typ. 1190 135 28.5 54.5 8.7 25.8 Max. Unit pF pF pF nC nC nC 4/14 STGP19NC60S Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(Voff) tf tr(Voff) td(Voff) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 480V, IC = 12A , RG= 10Ω VGE= 15V, Figure 18 VCC = 480V, IC = 12A , RG= 10Ω VGE= 15V, Tj = 125°C Figure 18 VCC = 480V, IC = 12A RG= 10Ω VGE= 15V, , Figure 18 VCC = 480V, IC = 12A , RG= 10Ω VGE= 15V, Tj = 125°C Figure 18 90 175 215 155 245 290 ns ns ns ns ns ns Min. Typ. 17.5 6.2 1870 17 6.5 1700 Max. Unit ns ns A/µs ns ns A/µs Table 6. Symbol Eon Eoff(1) Ets Eon Eoff(1) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 480V, IC = 12A RG= 10Ω VGE= 15V, , Figure 16 VCC = 480V, IC = 12A , RG= 10Ω VGE= 15V, Tj = 125°C Figure 16 Min. Typ. 135 815 995 200 1175 1375 Max. Unit µJ µJ µJ µJ µJ µJ 1. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics STGP19NC60S 2.1 Figure 1. Electrical characteristics (curves) Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations 6/14 STGP19NC60S Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Electrical characteristics Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/14 Electrical characteristics Figure 13. Turn-off SOA Figure 14. Thermal impedance STGP19NC60S Figure 15. IC vs. frequency 8/14 STGP19NC60S Electrical characteristics 2.2 Frequency applications For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) ● The maximum power dissipation is limited by maximum junction to case thermal resistance: Equation 1 PD = ∆T / RTHJ-C considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C ● The conduction losses are: Equation 2 PC = IC * VCE(SAT) * δ with 50% of duty cycle, VCESAT typical value @125°C. ● Power dissipation during ON & OFF commutations is due to the switching frequency: Equation 3 PSW = (EON + EOFF) * freq. Typical values @ 125°C for switching losses are used (test conditions: VCE = 480V, VGE=15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see Note 1), while the tail of the collector current is included in the EOFF measurements. 9/14 Test circuit STGP19NC60S 3 Test circuit Figure 17. Gate charge test circuit Figure 16. Test circuit for inductive load switching Figure 18. Switching waveform Figure 19. Diode recovery time waveform 10/14 STGP19NC60S Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGP19NC60S TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 12/14 STGP19NC60S Revision history 5 Revision history Table 7. Date 02-Jul-2007 13-Aug-2007 18-Sep-2007 Document revision history Revision 1 2 3 First release From target to preliminary version Added new section: Electrical characteristics (curves) Changes 13/14 STGP19NC60S Please Read Carefully: Information in this document is provided solely in connection with ST products. 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