STD15P6F6AG

STD15P6F6AG Automotive-grade P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Features  Figure 1: Internal schematic diagram D(2, TAB)     Order code VDSS RDS(on) max. ID STD15P6F6AG -60 V 0.16 Ω -10 A Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. G(1) S(3) AM11258v1 Table 1: Device summary Order code Marking Package Packaging STD15P6F6AG 15P6F6 DPAK Tape and Reel October 2015 DocID028450 Rev 1 This is information on a product in full production. 1/15 www.st.com Contents STD15P6F6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/15 4.1 DPAK package information ............................................................... 9 4.2 Packing information ......................................................................... 12 Revision history ............................................................................ 14 DocID028450 Rev 1 STD15P6F6AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -60 V VGS Gate-source voltage ± 20 V (1) ID Drain current (continuous) at TC = 25 °C -10 A ID Drain current (continuous) at TC = 100 °C -7.2 A (2) IDM Drain current (pulsed) -40 A PTOT Total dissipation at TC = 25 °C 35 W EAS Single pulse avalanche energy (starting TJ=25 °C, ID=-3 A, VDD=-40 V) 80 mJ VDG Drain-gate voltage -20 V -55 to 175 °C 175 °C Tstg Storage temperature Tj Maximum junction temperature Notes: (1) (2) Limited by package Pulse width limited by safe operating area. Table 3: Thermal data Symbol Rthj-case Rthj-pcb Parameter Thermal resistance junction-case max (1) Thermal resistance junction-pcb max Value Unit 4.29 °C/W 50 °C/W Notes: (1) 2 When mounted on 1 inch FR-4, 2 Oz copper board DocID028450 Rev 1 3/15 Electrical characteristics 2 STD15P6F6AG Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter V(BR)DSS Drain-source breakdown voltage IDSS Zero gate voltage Drain current IGSS Test conditions Min. VGS = 0 V, ID = -250 µA -60 Typ. Max. Unit V VGS = 0 V, VDS = -60 V -1 µA VGS = 0 V, VDS = -60 V, TC = 125 °C -10 µA Gate-body leakage current VDS = 0 V, VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = -250 µA -4 V RDS(on) Static drain-source onresistance VGS = -10 V, ID = -5 A 0.13 0.16 Ω Min. Typ. Max. Unit - 340 - pF - 40 - pF - 20 - pF - 6.4 - nC - 1.7 - nC - 1.7 - nC -2 Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Test conditions VDS = -48 V, f = 1 MHz, VGS = 0 V VDD = -30 V, ID = -10 A, VGS = -10 V (see Figure 14: "Gate charge test circuit") Qgs Gate-source charge Qgd Gate-drain charge Table 6: Switching times Symbol Parameter td(on) Turn-on delay time tr td(off) tf 4/15 Rise time Turn-off-delay time Test conditions VDD = -48 V, ID = -5 A RG = 4.7 Ω, VGS = -10 V (see Figure 13: "Switching times test circuit for resistive load") Fall time Min. Typ. Max. Unit - 64 - ns - 5.3 - ns - ns - ns - DocID028450 Rev 1 14 3.7 STD15P6F6AG Electrical characteristics Table 7: Source drain diode Symbol ISD (1) ISDM VSD (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - -10 A Source-drain current (pulsed) - -40 A - -1.1 V Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current VGS = 0 V, ISD = -5 A ISD = -10 A, di/dt = 100 A/µs, VDD = -48 V, (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 20 ns - 17.8 nC - -1.8 A Notes: (1) (2) Pulse width limited by safe operating area. Pulse test: pulse duration = 300 µs, duty cycle 1.5% DocID028450 Rev 1 5/15 Electrical characteristics 2.2 STD15P6F6AG Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance K GIPG180420141107SA δ=0.5 0.2 0.1 0.05 10 -1 0.02 0.01 Single pulse 10 -2 10 -5 6/15 10 -4 10 -3 10 -2 10 -1 t p(s) Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Stati drain-source on-resistance DocID028450 Rev 1 STD15P6F6AG Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized V(BR)DSS vs temperature C (pF) 400 Ciss 300 200 100 0 0 10 20 30 40 Coss Crss 50 VDS(V) Figure 10: Normalized gate threshold voltage vs temperature Figure 11: Normalized on-resistance vs. temperature Figure 12: Source-drain diode forward characteristics For the P-channel Power MOSFET, current and voltage polarities are reversed. DocID028450 Rev 1 7/15 Test circuits 3 STD15P6F6AG Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times 8/15 DocID028450 Rev 1 STD15P6F6AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 4.1 DPAK package information Figure 16: DPAK (TO-252) type A package outline DocID028450 Rev 1 9/15 Package information STD15P6F6AG Table 8: DPAK (TO-252) type A mechanical data mm Dim. Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 10/15 Typ. 5.10 5.25 6.60 1.00 0.20 0° DocID028450 Rev 1 8° STD15P6F6AG Package information Figure 17: DPAK (TO-252) recommended footprint (dimensions are in mm) DocID028450 Rev 1 11/15 Package information 4.2 STD15P6F6AG Packing information Figure 18: DPAK (TO-252) tape outline 12/15 DocID028450 Rev 1 STD15P6F6AG Package information Figure 19: DPAK (TO-252) reel outline Table 9: DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 B1 D 1.5 D1 1.5 E 1.65 F 1.6 Min. Max. 330 13.2 D 20.2 G 16.4 1.85 N 50 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID028450 Rev 1 18.4 22.4 13/15 Revision history 5 STD15P6F6AG Revision history Table 10: Document revision history 14/15 Date Revision 20-Oct-2015 1 DocID028450 Rev 1 Changes First release. STD15P6F6AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID028450 Rev 1 15/15