STD3NK80Z

STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-channel 800V - 3.8Ω - 2.5A - TO-220/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™ Power MOSFET General features Type STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1 ■ ■ ■ ■ ■ VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 4.5 Ω < 4.5 Ω < 4.5 Ω < 4.5 Ω ID 2.5 A 2.5 A 2.5 A 2.5 A 3 1 1 3 2 3 1 2 TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility DPAK IPAK Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number STP3NK80Z STF3NK80Z STD3NK80ZT4 STD3NK80Z-1 Marking P3NK80Z F3NK80Z D3NK80Z D3NK80Z Package TO-220 TO-220FP DPAK IPAK Packaging Tube Tube Tape & reel Tube August 2006 Rev 4 1/18 www.st.com 18 Contents STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value TO-220 / DPAK IPAK TO-220FP V V V 2.5 (1) 1.57 (1) 10 (1) 25 0.2 2 4.5 -55 to 150 2500 A A A W W/°C V V/ns V °C Unit VDS VDGR VGS ID ID IDM(2) PTOT Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20KΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 2.5 1.57 10 70 0.56 800 800 ± 30 VESD(G-S) dv/dt (3) VISO TJ Tstg Gate source ESD (HBM-C=100pF, R=1.5ΚΩ) Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤2.5A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 2. Symbol Thermal data Parameter TO-220 Value TO-220FP 5 62.5 300 DPAK IPAK 1.78 100 °C/W °C/W °C Unit Rthj-case Rthj-a Tl Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1.78 3/18 Electrical ratings STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 2.5 170 Unit A mJ Table 4. Symbol BVGSO Gate-source zener diode Parameter Test conditions Min. 30 Typ. Max. Unit V Gate-source breakdown voltage Igs=± 1mA (Open Drain) 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/18 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Electrical characteristics 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc = 125°C Min. 800 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω IDSS IGSS VGS(th) RDS(on) Gate body leakage current VGS = ± 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 50µA VGS = 10V, ID = 1.25 A 3 3.75 3.8 4.5 4.5 Table 6. Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Test conditions Min. Typ. 2.1 485 57 11 22 17 27 36 40 19 3.2 10.8 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Forward transconductance VDS =15V, ID = 1.25A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge VDS =25V, f=1 MHz, VGS=0 VGS=0, VDS =0V to 640V VDD=400 V, ID= 1.25 A, RG=4.7Ω, VGS=10V (see Figure 18) VDD=640V, ID = 2.5 A VGS =10V 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/18 Electrical characteristics STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5 A, VGS=0 ISD= 2.5A, di/dt = 100A/µs, VDD=50V, Tj=25°C (see Figure 20) ISD= 2.5 A, di/dt = 100A/µs, VDD=50V, Tj=150°C (see Figure 20) 384 1600 8.4 474 2100 8.8 Test conditions Min Typ. Max 2.5 10 1.6 Unit A A V ns µC A ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/18 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO220/DPAK/IPAK Figure 2. Thermal impedance for TO220/DPAK/IPAK Figure 3. Safe operating area for TO-220FP (HV19050) Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 7/18 Electrical characteristics Figure 7. Transconductance STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 8/18 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Figure 13. Source-drain diode forward characteristics Electrical characteristics Figure 14. Normalized BVDSS vs temperature Figure 15. Maximum avalanche energy vs temperature 9/18 Test circuit STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 3 Test circuit Figure 17. Unclamped Inductive waveform Figure 16. Unclamped Inductive load test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load switching and diode recovery times 10/18 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/18 Package mechanical data STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 12/18 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Package mechanical data TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 G 13/18 Package mechanical data STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 DPAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0° 8° 0° 1 0.023 0.008 8° 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 14/18 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Package mechanical data TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 15/18 Packing mechanical data STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 16/18 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Revision history 6 Revision history Table 8. Date 09-Sep-2004 10-Aug-2006 Revision history Revision 3 4 Complete document New template, no content change Changes 17/18 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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