STD95N4LF3

STD95N4LF3 N-channel 40 V, 5.0 mΩ typ., 80 A STripFET™ III Power MOSFET in a DPAK package Datasheet — production data Features Type VDSS STD95N4LF3 40 V RDS(on) max ID PD TAB < 6.0 mΩ 80 A(1) 110 W 3 1. Value limited by wire bonding ■ 100% avalanche tested ■ Logic level drive 1 DPAK Applications ■ Switching application – Automotive Description Figure 1. Internal schematic diagram This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. D (TAB or 2) G(1) S(3) AM01474v1 Table 1. Device summary Order codes Marking Package Packaging STD95N4LF3 95N4LF3 DPAK Tape and reel July 2012 This is information on a product in full production. Doc ID 15372 Rev 3 1/15 www.st.com 15 Contents STD95N4LF3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 8 Doc ID 15372 Rev 3 STD95N4LF3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 16 V Drain current (continuous) at TC = 25 °C 80 A Drain current (continuous) at TC = 100 °C 65 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 110 W Derating factor 0.73 W/°C 8 V/ns Single pulse avalanche energy 400 mJ Operating junction temperature Storage temperature -55 to 175 °C Value Unit ID (1) ID IDM (2) PTOT dv/dt (3) EAS (4) Tj Tstg Peak diode recovery voltage slope 1. Value limited by wire bonding 2. Pulse width limited by safe operating area 3. ISD ≤ 80 A, di/dt ≤ 40 A/µs, VDS ≤ V(BR)DSS, TJ ≤ TJMAX 4. Starting TJ = 25 °C, ID = 40 A, VDD = 35 V Figure 16 and Figure 17 Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-pcb (1) Thermal resistance junction-pcb max 50 °C/W 1. When mounted on 1inch² FR-4 2Oz Cu board Doc ID 15372 Rev 3 3/15 Electrical characteristics 2 STD95N4LF3 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 250 μA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 40 V VDS = 40 V, TC= 125 °C 10 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 16 V ±200 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 40 A VGS = 5 V, ID = 40 A 5.0 6.0 9.0 mΩ mΩ Min. Typ. Max. Unit - 2500 560 50 pF pF pF ns ns ns ns V(BR)DSS Table 5. Symbol 4/15 On/off states 40 V 1 Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 20 V, ID = 40 A RG = 4.7 Ω VGS = 10 V (see Figure 13 and Figure 18) - 7.5 45 45 11 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 20 V, ID = 80 A, VGS = 10 V (see Figure 14) - 50 7 9.5 Doc ID 15372 Rev 3 70 nC nC nC STD95N4LF3 Electrical characteristics Table 6. Symbol Source drain diode Parameter Test conditions ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM ISD = 80 A, VGS = 0 ISD = 80 A, di/dt = 100 A/µs, Reverse recovery time VDD = 20 V, Tj = 150 °C Reverse recovery charge (see Figure 15 and Reverse recovery current Figure 19) Min. Max. Unit - 80 320 A A - 1.5 V - Typ. 40 55 3 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 15372 Rev 3 5/15 Electrical characteristics STD95N4LF3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM01528v1 ID (A) is ea ar (on) s i S D th in ax R on ati by m r e d Op ite Lim 100 100µs 1ms 10 10ms 1 TJ=175°C TC=25°C Single pulse 0.1 0.1 Figure 4. 10 1 VDS(V) Output characteristics AM01529v1 ID (A) VGS=10V 300 AM01530v1 ID (A) 300 250 250 VDS=10V 4V 200 200 150 150 100 100 3V 50 0 0 Figure 6. 50 1 2 3 4 5 6 7 8 0 0 VDS(V) Static drain-source on-resistance AM01532v1 RDS(on) (mΩ) 6.6 9 Figure 7. 2 4 8 6 VGS(V) Normalized BVDSS vs temperature AM01531v1 BVDSS (norm) VGS=5V 1.1 6.4 6.2 6.0 1.0 5.8 0.9 5.6 5.4 0.8 5.2 5.0 0 6/15 10 20 30 40 50 60 70 80 ID(A) Doc ID 15372 Rev 3 -50 0 50 100 150 TJ(°C) STD95N4LF3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM01533v1 VGS (V) VDD=20V VGS=10V ID=80A 12 10 Capacitance variations AM01534v1 C (pF) f=1MHz VDS=25V VGS=0 5000 4500 4000 8 3500 6 2500 3000 Ciss 2000 4 1500 1000 2 0 0 10 20 30 40 50 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM01535v1 VGS(th) (norm) 500 0 0 Coss Crss 5 15 10 20 25 30 35 VDS(V) Figure 11. Normalized on resistance vs temperature AM01536v1 RDS(on) (norm) 1.6 1.6 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 -50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C) Figure 12. Source-drain diode forward characteristics Doc ID 15372 Rev 3 7/15 Test circuits 3 STD95N4LF3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/15 0 Doc ID 15372 Rev 3 10% AM01473v1 STD95N4LF3 Test circuits Figure 19. Diode reverse recovery waveform Doc ID 15372 Rev 3 9/15 Package mechanical data 4 STD95N4LF3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 7. DPAK (TO-252) mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R V2 10/15 Max. 0.20 0° 8° Doc ID 15372 Rev 3 STD95N4LF3 Package mechanical data Figure 20. DPAK (TO-252) drawing 0068772_I Figure 21. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 a. All dimensions are in millimeters Doc ID 15372 Rev 3 11/15 Packing mechanical data 5 STD95N4LF3 Packing mechanical data Table 8. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 12/15 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 15372 Rev 3 18.4 22.4 STD95N4LF3 Packing mechanical data Figure 22. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 23. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 15372 Rev 3 13/15 Revision history 6 STD95N4LF3 Revision history Table 9. Document revision history Date Revision 11-Feb-2009 1 First release 23-Jul-2009 2 Marking on device summary has been corrected. 3 Updated title on the cover page. Minor text changes. Updated Section 4: Package mechanical data and Section 5: Packing mechanical data. 13-Jul-2012 14/15 Changes Doc ID 15372 Rev 3 STD95N4LF3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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