STH240N10F7-2, STH240N10F7-6
Datasheet
N-channel 100 V, 2 mΩ typ., 180 A STripFET™ F7 Power MOSFETs in an
H²PAK-2 and H²PAK-6 packages
Features
Order code
TAB
TAB
STH240N10F7-2
7
2
3
1
H 2 PAK-2
1
H2 PAK-6
D(TAB)
G(1)
D(TAB)
RDS(on) max.
ID
100 V
2.5 mΩ
180 A
•
Among the lowest RDS(on) on the market
•
•
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
•
High avalanche ruggedness
Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an
enhanced trench gate structure that results in very low on-state resistance, while also
reducing internal capacitance and gate charge for faster and more efficient switching.
G(1)
S(2, 3)
STH240N10F7-6
VDS
S(2, 3, 4, 5, 6, 7)
for
H2PAK-2
for
2
H PAK-6
N-CHG1DTABS23_2_6
Product status
STH240N10F7-2
STH240N10F7-6
Product summary
Order code
STH240N10F7-2
Marking
240N10F7
Package
H²PAK-2
Packing
Tape and reel
Order code
STH240N10F7-6
Marking
240N10F7
Package
H²PAK-6
Packing
Tape and reel
DS10259 - Rev 3 - February 2018
For further information contact your local STMicroelectronics sales office.
www.st.com/
STH240N10F7-2, STH240N10F7-6
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
±20
V
ID (1)
Drain current (continuous) at TC = 25 °C
180
A
Drain current (continuous) at Tc = 100 °C
120
A
IDM (2)
Drain current (pulsed)
720
A
PTOT
Total dissipation at TC = 25 °C
300
W
Single pulse avalanche energy
500
mJ
-55 to 175
°C
ID
(1)
EAS
(3)
Tj
Tstg
Operating junction temperature range
Storage temperature range
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting Tj=25 °C, ID=45 A, VDD=50 V
Table 2. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.5
°C/W
Rthj-pcb (1)
Thermal resistance junction-pcb
35
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
DS10259 - Rev 3
page 2/18
STH240N10F7-2, STH240N10F7-6
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 3. On/Off states
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Parameter
Drain-source breakdown
voltage
Zero gate voltage
drain current
Gate-body leakage
current
Test conditions
Min.
ID = 250 µA, VGS = 0 V
100
Static drain-source
Unit
V
1
µA
VGS = 0 V, VDS = 100 V,
TC=125 °C (1)
100
µA
VGS = ±20 V, VDS = 0 V
100
nA
4.5
V
2.5
mΩ
2.5
VGS = 10 V, ID= 60 A
on-resistance
Max.
VGS = 0 V, VDS = 100 V
VDS = VGS , ID = 250 μA
Gate threshold voltage
Typ.
2
1. Defined by design, not subject to production test.
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
11550
-
pF
-
2950
-
pF
-
217
-
pF
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Qg
Total gate charge
VDD = 50 V, ID = 180 A,
-
160
-
nC
Qgs
Gate-source charge
VGS = 0 to 10 V
-
48
-
nC
Qgd
Gate-drain charge
(see Figure 15. Test circuit for
gate charge behavior)
-
38
-
nC
VDS = 25 V, f = 1 MHz,
VGS = 0 V
Table 5. Switching times
Symbol
td(on)
tr
td(off)
tf
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
VDD = 50 V, ID = 90 A,
-
49
-
ns
Rise time
RG = 4.7 Ω, VGS = 10 V (see
Figure 14. Test circuit for
resistive load switching times
and Figure 19. Switching time
waveform)
-
139
-
ns
-
110
-
ns
-
112
-
ns
Min.
Typ.
Max.
Unit
Turn-off delay time
Fall time
Table 6. Source-drain diode
Symbol
ISD
ISDM
DS10259 - Rev 3
(1)
Parameter
Test conditions
Source-drain current
-
180
A
Source-drain current (pulsed)
-
720
A
page 3/18
STH240N10F7-2, STH240N10F7-6
Electrical characteristics
Symbol
VSD(2)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
1.2
V
Source-drain curren
ISD = 180 A, VGS = 0 V
-
Reverse recovery time
ISD = 180 A, di/dt = 100 A/µs
-
108
ns
Qrr
Reverse recovery charge
-
315
nC
IRRM
Reverse recovery current
VDD = 64 V, TJ = 150 °C (see
Figure 16. Test circuit for
inductive load switching and
diode recovery times)
-
5.8
A
trr
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300 μs, duty cycle 1.5%.
DS10259 - Rev 3
page 4/18
STH240N10F7-2, STH240N10F7-6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 3. Safe operating area
ID
(A)
Figure 4. Thermal impedance
GIPG020220181234SOA
10 2
tp =100 µs
Operation in this area is
limited by R DS(on)
10 1
tp =400 µs
tp =1 ms
10 0
10
tp =10 ms
T j ≤175 °C
T c = 25°C
single pulse
10 -1
tp =200 ms
-2
10-1
100
VDS (V)
101
Figure 5. Output characteristics
Figure 6. Transfer characteristics
GIPG080720141111SA
ID (A)
VGS=8, 9, 10V
350
6V
7V
300
250
200
150
5V
100
50
0
0
1
2
3
VDS(V)
Figure 7. Gate charge vs gate-source voltage
Figure 8. Static drain-source on-resistance
GIPG080720141135SA
RDS(on)
(mΩ)
VGS=10V
2.10
2.00
1.90
1.80
20
DS10259 - Rev 3
40
60
80 100 120 140 160 ID(A)
page 5/18
STH240N10F7-2, STH240N10F7-6
Electrical characteristics (curves)
Figure 9. Capacitance variations
GIPG040620141429SA
C
(pF)
Figure 10. Normalized gate threshold voltage vs.
temperature
GIPG070720141441SA
VGS(th)
(norm)
ID=250µA
Ciss
10000
1
Coss
1000
0.8
100
0.6
Crss
10
0
20
40
60
80
VDS(V)
Figure 11. Normalized V(BR)DSS vs. temperature
0.4
-75
-25
25
75
125
TJ(°C)
Figure 12. Normalized on-resistance vs. temperature
GIPG070720141455SA
RDS(on)
(norm)
VGS=10V
ID=60A
1.8
1.4
1
0.6
-75
-25
25
75
125 TJ(°C)
Figure 13. Source-drain diode forward characteristics
DS10259 - Rev 3
page 6/18
STH240N10F7-2, STH240N10F7-6
Test circuits
3
Test circuits
Figure 14. Test circuit for resistive load switching times
Figure 15. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 16. Test circuit for inductive load switching and
diode recovery times
Figure 17. Unclamped inductive load test circuit
L
D
G
A
D.U.T.
S
25 Ω
A
A
100 µH
fast
diode
B
B
B
VD
3.3
µF
D
G
+
RG
1000
+ µF
2200
+ µF
3.3
µF
VDD
ID
VDD
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
V(BR)DSS
ton
VD
td(on)
IDM
toff
td(off)
tr
90%
tf
90%
10%
ID
VDD
10%
0
VDD
VGS
0
VDS
90%
10%
AM01472v1
AM01473v1
DS10259 - Rev 3
page 7/18
STH240N10F7-2, STH240N10F7-6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS10259 - Rev 3
page 8/18
STH240N10F7-2, STH240N10F7-6
H²PAK-2 package information
4.1
H²PAK-2 package information
Figure 20. H²PAK-2 package outline
8159712_6
DS10259 - Rev 3
page 9/18
STH240N10F7-2, STH240N10F7-6
H²PAK-2 package information
Table 7. H²PAK-2 package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.30
4.70
A1
0.03
0.20
C
1.17
1.37
e
4.98
5.18
E
0.50
0.90
F
0.78
0.85
H
10.00
10.40
H1
7.40
L
15.30
L1
1.27
1.40
L2
4.93
5.23
L3
6.85
7.25
L4
1.5
1.7
M
2.6
2.9
R
0.20
0.60
V
0°
8°
-
7.80
15.80
Figure 21. H²PAK-2 recommended footprint
8159712_6
Note:
DS10259 - Rev 3
Dimensions are in mm.
page 10/18
STH240N10F7-2, STH240N10F7-6
H²PAK-6 package information
4.2
H²PAK-6 package information
Figure 22. H²PAK-6 package outline
8159693_Rev_8
DS10259 - Rev 3
page 11/18
STH240N10F7-2, STH240N10F7-6
H²PAK-6 package information
Table 8. H²PAK-6 package mechanical data
Dim.
mm
Min.
DS10259 - Rev 3
Typ.
Max.
A
4.30
4.70
A1
0.03
0.20
C
1.17
1.37
e
2.34
e1
4.88
5.28
e2
7.42
7.82
E
0.45
0.60
F
0.50
0.70
H
10.00
10.40
H1
7.40
7.80
L
14.75
15.25
L1
1.27
1.40
L2
4.35
4.95
L3
6.85
7.25
L4
1.50
1.75
M
1.90
2.50
R
0.20
0.60
V
0°
8°
2.54
2.74
page 12/18
STH240N10F7-2, STH240N10F7-6
H²PAK-6 package information
Figure 23. H²PAK-6 recommended footprint
footprint_Rev_8
Note:
DS10259 - Rev 3
Dimensions are in mm.
page 13/18
STH240N10F7-2, STH240N10F7-6
Packing information
4.3
Packing information
Figure 24. Tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
K0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
DS10259 - Rev 3
page 14/18
STH240N10F7-2, STH240N10F7-6
Packing information
Figure 25. Reel outline
T
REEL DIMENSIONS
40 mm min.
Access hole
At slot location
B
D
C
N
A
G measured
Tape slot
In core for
Full radius
At hub
Tape start
Table 9. Tape and reel mechanical data
Tape
Dim.
DS10259 - Rev 3
Reel
mm
mm
Dim.
Min.
Max.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
330
13.2
26.4
30.4
page 15/18
STH240N10F7-2, STH240N10F7-6
Revision history
Table 10. Document revision history
Date
Version
07-May-2014
1
Changes
Initial release.
– Modified: title and description
23-Jul-2014
2
– Added: Section 2.1: Electrical characteristics (curves)
– Minor text changes
Removed maturity status indication from cover page. Production data.
06-Feb-2018
3
Modified Figure 3. Safe operating area.
Minor text changes.
DS10259 - Rev 3
page 16/18
STH240N10F7-2, STH240N10F7-6
Contents
Contents
1
Electrical ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.1
H²PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
H²PAK-6 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.3
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
DS10259 - Rev 3
page 17/18
STH240N10F7-2, STH240N10F7-6
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS10259 - Rev 3
page 18/18