STH310N10F7-2,
STH310N10F7-6
N-channel 100 V, 1.9 mΩ typ.,180 A, STripFET™ F7
Power MOSFETs in H2PAK-2 and H2PAK-6 packages
Datasheet - production data
Features
TAB
TAB
Order code
1
2
H PAK-2
STH310N10F7-2
7
2
3
STH310N10F7-6
1
2
H PAK-6
Figure 1: Internal schematic diagram
VDS
RDS(on) max.
ID
100 V
2.3 mΩ
180 A
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onresistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(2,3,4,5,6,7)
Table 1: Device summary
Order code
STH310N10F7-2
STH310N10F7-6
July 2015
Marking
310N10F7
DocID024040 Rev 4
This is information on a product in full production.
Package
H2PAK-2
H2PAK-6
Packing
Tape and reel
1/19
www.st.com
Contents
STH310N10F7-2, STH310N10F7-6
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
5
2/19
4.1
H2PAK-2 package information ........................................................ 10
4.2
H2PAK-6 package information ........................................................ 13
4.3
Packing information ......................................................................... 16
Revision history ............................................................................ 18
DocID024040 Rev 4
STH310N10F7-2, STH310N10F7-6
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
± 20
V
Drain current (continuous) at TC = 25 °C
180
A
ID(1)
Drain current (continuous) at TC = 100 °C
180
A
ID(2)
Drain current (pulsed)
720
A
PTOT
Total dissipation at TC = 25 °C
315
W
EAS(3)
Single pulse avalanche energy (TJ = 25 °C L = 0.55 mH, IAS = 65 A)
1
J
TJ
Operating junction temperature
Tstg
Storage temperature
-55 to 175
°C
°C
Notes:
(1)Current
(2)Pulse
limited by package
width limited by safe operating area
(3)Starting
TJ = 25 °C, ID = 60 A, VDD = 50 V
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Rthj-pcb
(1)
Value
Unit
Thermal resistance junction-case
0.48
°C/W
Thermal resistance junction-pcb
35
°C/W
Notes:
(1)When
mounted on FR-4 board of 1 inch², 2 oz Cu
DocID024040 Rev 4
3/19
Electrical characteristics
2
STH310N10F7-2, STH310N10F7-6
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4: On/off-state
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage (VGS= 0)
Min.
ID = 250 µA
Typ.
Max.
100
Unit
V
1
µA
VDS = 100 V; TC = 125 °C
100
µA
Gate body leakage current
(VDS = 0)
VGS = 20 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3.5
4.5
V
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 60 A
1.9
2.3
mΩ
Max.
Unit
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VDS = 100 V
2.5
Table 5: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Test conditions
Min.
Typ.
VDS = 25 V, f = 1 MHz,
VGS = 0
12800
pF
3500
pF
170
-
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
pF
-
VDD = 50 V, ID = 180 A
VGS = 10 V
See Figure 14: "Gate
charge test circuit"
180
nC
78
nC
34
nC
Table 6: Switching times
Symbol
td(on)
tr
td(off)
tf
4/19
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 50 V, ID = 90 A,
RG = 4.7 Ω, VGS= 10 V
See Figure 13: "Switching
times test circuit for
resistive load"
DocID024040 Rev 4
Min.
Typ.
Max.
62
ns
108
-
148
40
Unit
ns
-
ns
ns
STH310N10F7-2, STH310N10F7-6
Electrical characteristics
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
180
A
ISDM(1)
Source-drain current
(pulsed)
720
A
VSD(2)
Forward on voltage
ISD = 60 A, VGS = 0
1.5
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 180 A,
di/dt = 100 A/µs,
VDD = 80 V, Tj = 150 °C
85
ns
200
nC
4.7
A
Notes:
(1)Pulse
width limited by safe operating area
(2)Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
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5/19
Electrical characteristics
2.1
STH310N10F7-2, STH310N10F7-6
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
AM15430v1
ID
(A)
a
e
ar
280tok
K
is
ᵟ =0.5
)
is DS(on
th
in ax R
it on y m
a
er d b
Op ite
Lim
100
0.2
0.1
10
10
100µs
0.05
-1
0.02
1
Tj= 175 °C
Tc= 25 °C
1ms
Sinlge
pulse
10ms
Zth=k Rthj-c
ᵟ =tp/ t
0.01
Single pulse
tp
t
-2
0.1
0.1
10
1
10 -5
10
V DS(V)
Figure 4: Output characteristics
10
10
-2
10
-1
tp (s)
AM14735v1
ID
(A)
V GS=10V
V DS = 2V
350
300
-3
Figure 5: Transfer characteristics
AM14734v1
ID
(A)
10
-4
8V
7V
250
300
250
200
200
150
150
100
100
6V
50
50
5V
0
0
2
4
6
8
0
0
V DS(V)
Figure 6: Gate charge vs gate-source voltage
V DD=50V
ID=180 A
10
8
2.20
6
2.15
4
2.10
2
2.05
50
100
150
4
5
6
7
8
V GS(V)
AM15431v1
V GS=10V
2
0
3
R DS(on)
(mΩ)
2.25
0
6/19
2
Figure 7: Static drain-source on-resistance
AM14736v1
V GS
(V)
1
Q g(nC)
DocID024040 Rev 4
0
40
80
120
160
ID(A)
STH310N10F7-2, STH310N10F7-6
Electrical characteristics
Figure 8: Normalized V(BR)DSS vs
temperature
Figure 9: Capacitance variations
AM14738v1
C
(pF)
AM14742v1
V (BR)DSS
(norm)
14000
ID = 1m A
1.04
Ciss
12000
1.02
10000
8000
1.00
6000
0.98
4000
0.96
Crss
2000
Coss
0.94
-75
0
-25
25
75
125
T J(°C)
Figure 10: Source-drain diode forward
characteristics
20
40
60
80
100 V DS(V)
Figure 11: Normalized gate threshold voltage
vs temperature
AM14739v1
V SD
(V)
0
AM14741v1
V GS(th)
(norm)
1.05
ID = 250µ A
1.0
T J=-50°C
0.95
0.90
0.85
T J=25°C
0.75
0.80
0.65
0.45
0.70
T J=150°C
0.55
0
40
80
160
120
0.60
-75
ISD(A)
-25
0 25
75
125
T J(°C)
Figure 12: Normalized on-resistance vs temperature
AM14740v1
R DS(on)
(norm)
2.0
ID = 60A
1.6
1.2
0.8
0.4
-75
-25
0 25
75
DocID024040 Rev 4
125
T J(°C)
7/19
Test circuits
3
STH310N10F7-2, STH310N10F7-6
Test circuits
Figure 13: Switching times test circuit for resistive
load
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching
and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
8/19
DocID024040 Rev 4
STH310N10F7-2, STH310N10F7-6
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID024040 Rev 4
9/19
Package information
4.1
STH310N10F7-2, STH310N10F7-6
H2PAK-2 package information
Figure 19: H²PAK-2 package outline
8159712_D
10/19
DocID024040 Rev 4
STH310N10F7-2, STH310N10F7-6
Package information
Table 8: H²PAK-2 package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
4.98
5.18
E
0.50
0.90
F
0.78
0.85
H
10.00
10.40
H1
7.40
L
15.30
L1
1.27
1.40
L2
4.93
5.23
L3
6.85
7.25
L4
1.5
1.7
-
7.80
15.80
M
2.6
2.9
R
0.20
0.60
V
0°
8°
DocID024040 Rev 4
11/19
Package information
STH310N10F7-2, STH310N10F7-6
Figure 20: H²PAK-2 recommended footprint
8159712_D
12/19
DocID024040 Rev 4
STH310N10F7-2, STH310N10F7-6
4.2
Package information
H2PAK-6 package information
Figure 21: H²PAK-6 package outline
8159693_Rev_F
DocID024040 Rev 4
13/19
Package information
STH310N10F7-2, STH310N10F7-6
Table 9: H²PAK-6 package mechanical data
mm
Dim.
Min.
14/19
Typ.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
2.34
2.74
e1
4.88
5.28
e2
7.42
7.82
E
0.45
0.60
F
0.50
0.70
H
10.00
H1
7.40
L
14.75
15.25
L1
1.27
1.40
L2
4.35
4.95
L3
6.85
7.25
L4
1.5
1.75
M
1.90
2.50
R
0.20
0.60
V
0°
8°
DocID024040 Rev 4
-
10.40
7.80
STH310N10F7-2, STH310N10F7-6
Package information
Figure 22: H²PAK-6 recommended footprint
footprint_Rev_F
Dimensions are in mm.
DocID024040 Rev 4
15/19
Package information
4.3
STH310N10F7-2, STH310N10F7-6
Packing information
Figure 23: Tape outline
16/19
DocID024040 Rev 4
STH310N10F7-2, STH310N10F7-6
Package information
Figure 24: Reel outline
T
REE L DIMENS IONS
40 mm min.
Acc ess hole
At slot location
B
D
C
N
A
G measured
Tape slot
In core for
Full radius
At hub
Tape start
Table 10: Tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID024040 Rev 4
Min.
Max.
330
13.2
26.4
30.4
17/19
Revision history
5
STH310N10F7-2, STH310N10F7-6
Revision history
Table 11: Document revision history
Date
Revision
Changes
10-Dec-2012
1
Initial release. Part number(s) previously included in datasheet ID02287
23-Jul-2013
18/19
2
Document status promoted from preliminary to production
data
Modified: IDSS and VGS value in table 4
Added: EAS value in table 2
Minor text changes
Updated: H2PAK-6 package information.
Updated the title, features and description.
Minor text changes.
27-Nov-2014
3
29-Jul-2015
4
Updated Table 2: "Absolute maximum ratings".
DocID024040 Rev 4
STH310N10F7-2, STH310N10F7-6
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DocID024040 Rev 4
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