STH315N10F7-6

STH315N10F7-2, STH315N10F7-6 Datasheet Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET F7 Power MOSFETs in an H²PAK‑2 and H²PAK‑6 packages Features Order code TAB TAB STH315N10F7-2 7 2 3 1 H 2 PAK-2 1 H2 PAK-6 D(TAB) G(1) STH315N10F7-6 D(TAB) RDS(on) max. ID 100 V 2.3 mΩ 180 A • • AEC-Q101 qualified Among the lowest RDS(on) on the market • • Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications G(1) • S(2, 3) VDS Switching applications S(2, 3, 4, 5, 6, 7) for H2PAK-2 for 2 H PAK-6 N-CHG1DTABS23_2_6 Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status STH315N10F7-2 STH315N10F7-6 Product summary Order code STH315N10F7-2 Marking 315N10F7 Package H²PAK-2 Packing Tape and reel Order code STH315N10F7-6 Marking 315N10F7 Package H²PAK-6 Packing Tape and reel DS9870 - Rev 5 - May 2021 For further information contact your local STMicroelectronics sales office. www.st.com STH315N10F7-2, STH315N10F7-6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 180 A Drain current (continuous) at Tc = 100 °C 180 A IDM (2) Drain current (pulsed) 720 A PTOT Total dissipation at TC = 25 °C 315 W Derating factor 2.1 W/°C 1 J -55 to 175 °C ID (1) ID (1) EAS (3) Tj Tstg Single pulse avalanche energy Operating junction temperature range Storage temperature range 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting Tj=25 °C, ID=60 A, VDD=50 V Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance, junction-to-case 0.48 °C/W RthJB (1) Thermal resistance, junction-to-board 35 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. DS9870 - Rev 5 page 2/17 STH315N10F7-2, STH315N10F7-6 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On/Off states Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Test conditions Min. ID = 250 µA, VGS = 0 V 100 Static drain-source Unit V 1 µA VGS = 0 V, VDS = 100 V, TC=125 °C (1) 100 µA VGS = ±20 V, VDS = 0 V 100 nA 3.5 4.5 V 2.1 2.3 mΩ 2.5 VGS = 10 V, ID= 60 A on-resistance Max. VGS = 0 V, VDS = 100 V VDS = VGS , ID = 250 μA Gate threshold voltage Typ. 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 12800 - pF - 3500 - pF - 170 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge VDD = 50 V, ID = 180 A, - 180 - nC Qgs Gate-source charge VGS = 0 to 10 V - 78 - nC Gate-drain charge (see Figure 15. Test circuit for gate charge behavior) - 34 - nC Qgd VDS = 25 V, f = 1 MHz, VGS = 0 V Table 5. Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 50 V, ID = 90 A, - 62 - ns Rise time RG = 4.7 Ω, VGS = 10 V (see Figure 14. Test circuit for resistive load switching times and Figure 19. Switching time waveform) - 108 - ns - 148 - ns - 40 - ns Min. Typ. Max. Unit Turn-off delay time Fall time Table 6. Source-drain diode Symbol ISD DS9870 - Rev 5 Parameter Test conditions Source-drain current - 180 A ISDM (1) Source-drain current (pulsed) - 720 A VSD(2) Source-drain curren - 1.5 V ISD = 60 A, VGS = 0 V page 3/17 STH315N10F7-2, STH315N10F7-6 Electrical characteristics Symbol trr Parameter Test conditions Min. Typ. Max. Unit Reverse recovery time ISD = 180 A, di/dt = 100 A/µs - 85 ns Qrr Reverse recovery charge - 200 nC IRRM Reverse recovery current VDD = 80 V, TJ = 150 °C (see Figure 16. Test circuit for inductive load switching and diode recovery times) - 4.7 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300 μs, duty cycle 1.5%. DS9870 - Rev 5 page 4/17 STH315N10F7-2, STH315N10F7-6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance AM15430v1 ID (A) is ea n) ar is DS(o h t in ax R ion m at by r e d Op ite Lim 100 280tok K ᵟ=0.5 0.2 0.1 10 100µs 1 Tj= 175 °C Tc= 25 °C 1ms Sinlge pulse 10ms 0.05 -1 10 0.02 Zth=k Rthj-c ᵟ=tp/t 0.01 Single pulse tp t -2 0.1 0.1 10 1 VDS(V) Figure 3. Output characteristics ID (A) 300 -4 -2 -3 10 10 10 -1 tp (s) 10 Figure 4. Transfer characteristics AM14734v1 VGS=10V 8V 7V 250 10 -5 10 AM14735v1 ID (A) 350 VDS = 2V 300 250 200 200 150 150 100 6V 50 50 0 0 5V 2 4 6 8 VDS(V) Figure 5. Gate charge vs gate-source voltage AM14736v1 VGS (V) VDD=50V ID=180A 10 0 0 2.25 6 2.15 4 2.10 2 2.05 50 100 150 Qg(nC) 2 3 4 5 6 7 8 VGS(V) AM15431v1 RDS(on) (mΩ) 2.20 0 1 Figure 6. Static drain-source on-resistance 8 0 DS9870 - Rev 5 100 2 0 VGS=10V 40 80 120 160 ID(A) page 5/17 STH315N10F7-2, STH315N10F7-6 Electrical characteristics (curves) Figure 7. Normalized V(BR)DSS vs temperature Figure 8. Capacitance variations AM14742v1 V(BR)DSS (norm) ID = 1mA 1.04 AM14738v1 C (pF) 14000 Ciss 12000 1.02 10000 1.00 8000 6000 0.98 4000 0.96 0.94 -75 Crss 2000 -25 25 75 125 0 TJ(°C) Coss 0 20 40 60 80 Figure 10. Normalized gate threshold voltage vs temperature Figure 9. Source-drain diode forward characteristics AM14739v1 VSD (V) 100 VDS(V) AM14741v1 VGS(th) (norm) 1.05 TJ=-50°C ID = 250µA 1.0 0.95 0.85 0.90 TJ=25°C 0.75 0.80 0.65 TJ=150°C 0.55 0.45 0 40 80 120 0.70 160 0.60 -75 ISD(A) -25 0 25 75 125 TJ(°C) Figure 11. Normalized on-resistance vs temperature RDS(on) (norm) 2.0 AM14740v1 ID = 60A 1.6 1.2 0.8 0.4 -75 DS9870 - Rev 5 -25 0 25 75 125 TJ(°C) page 6/17 STH315N10F7-2, STH315N10F7-6 Test circuits 3 Test circuits Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 14. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 15. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 17. Switching time waveform Figure 16. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD VGS AM01472v1 0 VDS 10% 90% 10% AM01473v1 DS9870 - Rev 5 page 7/17 STH315N10F7-2, STH315N10F7-6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 H²PAK-2 package information Figure 18. H²PAK-2 package outline 8159712_9 DS9870 - Rev 5 page 8/17 STH315N10F7-2, STH315N10F7-6 H²PAK-2 package information Table 7. H²PAK-2 package mechanical data Dim. mm Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 D 8.95 9.35 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 F2 1.14 1.70 H 10.00 10.40 H1 7.40 J1 2.49 2.69 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.50 1.70 M 2.60 2.90 R 0.20 0.60 V 0° 8° - 7.80 Figure 19. H²PAK-2 recommended footprint 8159712_9 Note: DS9870 - Rev 5 Dimensions are in mm. page 9/17 STH315N10F7-2, STH315N10F7-6 H²PAK-6 package information 4.2 H²PAK-6 package information Figure 20. H²PAK-6 package outline 8159693_Rev_8 DS9870 - Rev 5 page 10/17 STH315N10F7-2, STH315N10F7-6 H²PAK-6 package information Table 8. H²PAK-6 package mechanical data Dim. DS9870 - Rev 5 mm Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 e 2.34 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 H1 7.40 7.80 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 L4 1.50 1.75 M 1.90 2.50 R 0.20 0.60 V 0° 8° 1.37 2.54 2.74 page 11/17 STH315N10F7-2, STH315N10F7-6 H²PAK-6 package information Figure 21. H²PAK-6 recommended footprint footprint_Rev_8 Note: DS9870 - Rev 5 Dimensions are in mm. page 12/17 STH315N10F7-2, STH315N10F7-6 Packing information 4.3 Packing information Figure 22. Tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm P0 Top cover tape T P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 23. Reel outline T REEL DIMENSIONS 40 mm min. Access hole At slot location B D C N A Tape slot In core for Full radius DS9870 - Rev 5 Tape start G measured At hub page 13/17 STH315N10F7-2, STH315N10F7-6 Packing information Table 9. Tape and reel mechanical data Tape Dim. DS9870 - Rev 5 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 14/17 STH315N10F7-2, STH315N10F7-6 Revision history Table 10. Document revision history Date Version 02-Aug-2013 1 03-Sep-2013 2 Changes Initial release. – Modified: Table 1, RDS(on) typical value in Table 4 – Minor text changes – Modified: title and Features in cover page 27-May-2014 3 – Updated: Section 4: Package mechanical data – Minor text changes DS9870 - Rev 5 12-Sep-2014 4 03-May-2021 5 – Modified: title, features and description in cover page. Updated Table 1. Absolute maximum ratings. Minor text changes. page 15/17 STH315N10F7-2, STH315N10F7-6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 H²PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 H²PAK-6 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.3 H²PAK-2 and H²PAK-6 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 DS9870 - Rev 5 page 16/17 STH315N10F7-2, STH315N10F7-6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS9870 - Rev 5 page 17/17