STP13N60DM2
Datasheet
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2
Power MOSFET in a TO-220 package
Features
TAB
1
2
•
•
•
•
•
•
3
TO-220
D(2, TAB)
Order code
VDS
RDS(on ) max.
ID
STP13N60DM2
600 V
0.365 Ω
11 A
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
G(1)
•
Switching applications
Description
S(3)
AM01475V1
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined
with low RDS(on), rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status
STP13N60DM2
Product summary
Order code
STP13N60DM2
Marking
13N60DM2
Package
TO-220
Packing
Tube
DS12837 - Rev 1 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STP13N60DM2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VGS
Parameter
Gate-source voltage
Value
Unit
±25
V
Drain current (continuous) at Tcase = 25 °C
11
Drain current (continuous) at Tcase = 100 °C
7
IDM (1)
Drain current (pulsed)
44
A
PTOT
Total power dissipation at Tcase = 25 °C
110
W
dv/dt (2)
Peak diode recovery voltage slope
40
dv/dt(3)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature range
ID
Tj
Operating junction temperature range
A
V/ns
-55 to 150
°C
Value
Unit
1. Pulse width limited by safe operating area.
2. ISD ≤ 11 A, di/dt ≤ 900 A/μs; VDS peak < V(BR)DSS, VDD=400 V.
3. VDS ≤ 480 V.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
1.14
Rthj-amb
Thermal resistance junction-amb
62.5
°C/W
Table 3. Avalanche characteristics
Symbol
DS12837 - Rev 1
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
2.5
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR,
VDD = 50 V)
340
mJ
page 2/13
STP13N60DM2
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. Static
Symbol
V(BR)DSS
Parameter
Drain-source breakdown
voltage
Test conditions
VGS = 0 V, ID = 1 mA
Min.
Typ.
600
Zero gate voltage drain current
IGSS
VGS(th)
RDS(on)
VDS = 0 V, VGS = ±25 V
Gate threshold voltage
VDS = VGS, ID = 250 µA
on-resistance
100
(1)
Gate-body leakage current
Static drain-source
1.5
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
Unit
V
VGS = 0 V, VDS = 600 V
IDSS
Max.
µA
±10
µA
4
5
V
0.310
0.365
Ω
Min.
Typ.
Max.
Unit
-
730
-
-
38
-
-
0.9
-
3
VGS = 10 V, ID = 5.5 A
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Test conditions
VDS = 100 V, f = 1 MHz, VGS = 0 V
Reverse transfer capacitance
(1)
pF
Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0 V
-
70
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID= 0 A
-
5.1
-
Ω
Qg
Total gate charge
-
19
-
Qgs
Gate-source charge
-
4.4
-
Qgd
Gate-drain charge
-
9.9
-
Coss eq.
VDD = 480 V, ID = 11 A, VGS = 0 to 10 V
(see Figure 14. Test circuit for gate
charge behavior)
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
DS12837 - Rev 1
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 5.5 A RG = 4.7 Ω,
VGS = 10 V (see Figure 13. Test circuit
for resistive load switching times and
Figure 18. Switching time waveform)
Min.
Typ.
Max.
-
12.3
-
-
4.8
-
-
42.5
-
-
10.6
-
Unit
ns
page 3/13
STP13N60DM2
Electrical characteristics
Table 7. Source-drain diode
Symbol
ISD
ISDM (1)
VSD
(2)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
11
A
Source-drain current (pulsed)
-
44
A
-
1.6
V
VGS = 0 V, ISD = 11 A
Forward on voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 15. Test circuit for inductive
load switching and diode recovery times)
ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 15. Test circuit
for inductive load switching and diode
recovery times)
-
90
ns
-
252
nC
-
5.6
A
-
170
ns
-
667
nC
-
8.6
A
Min.
Typ.
Max.
Unit
±30
-
-
V
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Table 8. Gate-source Zener diode
Symbol
V(BR)GSO
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 μA, ID = 0 A
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for
additional external componentry.
DS12837 - Rev 1
page 4/13
STP13N60DM2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
ID
(A) Operation in this area
is limited by R DS(on)
Figure 2. Thermal impedance
GIPG131120181354SOA
tp =1 µs
101
tp =10 µs
tp =100 µs
TJ≤150 °C
TC=25 °C
VGS=10 V
single pulse
100
10-1
10-1
100
101
tp =1 ms
tp =10 ms
VDS (V)
102
Figure 3. Output characteristics
ID
(A)
ID
(A)
GIPG070420161613OCH
V GS = 8, 9, 10 V
25
20
15
10
V GS = 6 V
5
5
V GS = 5 V
0
0
4
8
12
16
V DS (V)
Figure 5. Gate charge vs gate-source voltage
V GS
(V)
GIPG070420161614QVG V DS
(V)
12
DS12837 - Rev 1
V DS = 20 V
20
V GS = 7 V
10
600
V DD = 480 V
I D = 11 A
V DS
400
6
300
4
200
2
100
4
8
12
16
0
0
2
20
0
Q g (nC)
4
6
8
10
V GS (V)
Figure 6. Static drain-source on-resistance
R DS(on)
(Ω)
GIPG070420161610RID
0.33
V GS =10 V
500
8
0
0
GIPG070420161613TCH
25
15
10
Figure 4. Transfer characteristics
0.32
0.31
0.3
0.29
0
2
4
6
8
10
I D (A)
page 5/13
STP13N60DM2
Electrical characteristics (curves)
Figure 7. Capacitance variations
C
(pF)
GIPG070420161612CVR
10 3
V GS(th)
(norm.)
C ISS
GIPG060420161230VTH
1.1
I D = 250 µA
1.0
10 2
C OSS
0.9
C RSS
0.8
10 1
f = 1 MHz
10
Figure 8. Normalized gate threshold voltage vs
temperature
0
0.7
10
-1
10 -1
10 0
10 1
V DS (V)
10 2
Figure 9. Normalized on-resistance vs temperature
R DS(on)
(norm.)
GIPG070420161233RON
2.2
0.6
-75
1.04
1.4
1.00
1.0
0.96
0.6
0.92
-25
25
75
125
T j (°C)
Figure 11. Output capacitance stored energy
E OSS
(µJ)
GIPG070420161614EOS
75
V (BR)DSS
(norm.)
T j (°C)
0.88
-75
I D = 1 mA
-25
25
75
125
T j (°C)
Figure 12. Source- drain diode forward characteristics
V SD
(V)
GIPG070420161612SDF
1.1
5
125
GIPG060420161354BDV
1.08
V GS = 10 V
25
Figure 10. Normalized V(BR)DSS vs temperature
1.8
0.2
-75
-25
T j = -50 °C
1.0
4
0.9
T j = 25 °C
3
0.8
2
0.7
1
0
0
DS12837 - Rev 1
T j = 150 °C
0.6
100
200
300
400
500
600
V DS (V)
0.5
0
2
4
6
8
10
I SD (A)
page 6/13
STP13N60DM2
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
Figure 14. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
B
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 16. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 18. Switching time waveform
Figure 17. Unclamped inductive waveform
ton
V(BR)DSS
td(on)
VD
toff
td(off)
tr
tf
90%
90%
IDM
VDD
10%
0
ID
VDD
AM01472v1
VGS
0
VDS
10%
90%
10%
AM01473v1
DS12837 - Rev 1
page 7/13
STP13N60DM2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS12837 - Rev 1
page 8/13
STP13N60DM2
TO-220 type A package information
4.1
TO-220 type A package information
Figure 19. TO-220 type A package outline
0015988_typeA_Rev_22
DS12837 - Rev 1
page 9/13
STP13N60DM2
TO-220 type A package information
Table 9. TO-220 type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
DS12837 - Rev 1
Typ.
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
page 10/13
STP13N60DM2
Revision history
Table 10. Document revision history
DS12837 - Rev 1
Date
Revision
14-Nov-2018
1
Changes
First release.
page 11/13
STP13N60DM2
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
DS12837 - Rev 1
page 12/13
STP13N60DM2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS12837 - Rev 1
page 13/13