STPS3H100-Y
Datasheet
Automotive 3 A - 100 V power Schottky rectifier
Features
•
•
•
•
•
•
•
•
•
AEC-Q101 qualified revision C
Negligible switching losses
High junction temperature capability
Low leakage current
Good trade-off between leakage current and forward voltage drop
Avalanche capability specified
ECOPACK2 compliant
PPAP capable
VRRM guaranteed from -40 to +175 °C
Applications
•
•
•
•
DC/DC converter
Reverse polarity protection
Freewheeling diodes
Switching diode
Description
Product status link
STPS3H100-Y
This Schottky rectifier is packaged in SMB Flat designed for high frequency miniature
switched mode power supplies such as adaptors and on board DC to DC converters
for automotive applications.
Product summary
IF(AV)
3A
VRRM
100 V
Tj (max.)
175 °C
VF (typ.)
0.63 V
DS11461 - Rev 2 - January 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
STPS3H100-Y
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
100
V
VRRM
Repetitive peak reverse voltage, Tj = -40 °C to +175 °C
IF(AV)
Average forward current, δ = 0.5 square wave
Tl = 125 °C
3
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
25
A
PARM
Repetitive peak avalanche power
170
W
Storage temperature range
-65 to +175
°C
Maximum operating junction temperature range(1)
-40 to +175
°C
Tstg
Tj
tp = 10 µs,
Tj = 125 °C
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol
Rth(j-l)
Parameter
Typ. value
Unit
15
°C/W
Junction to lead
For more information, please refer to the following application note:
•
AN5088: Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Tj = 25 °C
IR
(1)
Reverse leakage current
Tj = 125 °C
VF(2)
Forward voltage drop
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Typ.
VR = VRRM
Tj = 150 °C
Tj = 25 °C
Min.
IF = 3 A
IF = 6 A
-
0.40
Max.
Unit
1.00
µA
1.00
-
3.3
-
0.84
-
0.63
-
0.68
0.94
0.71
mA
V
0.80
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.56 x IF(AV) + 0.04 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses on a power diode
DS11461 - Rev 2
page 2/9
STPS3H100-Y
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current
3.0
PF(AV) (W)
Figure 2. Average forward current versus ambient
temperature (δ = 0.5)
IF(AV) (A)
10
δ = 0.05
2.5
δ = 0.1
δ = 0.5
δ = 0.2
δ=1
8
2.0
6
Rth(j-a) = Rth(j-l)
1.5
4
1.0
T
δ = tp/T
IF(AV)(A)
T
2
0.5
tp
δ = tp/T
Tam b (°C)
tp
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Figure 3. Normalized avalanche power derating versus
junction temperature (Tj = 125 °C)
0
50
75
100
125
150
175
Figure 4. Relative variation of thermal impedance junction
to lead versus pulse duration
PARM (t p )
PARM (10 µs)
1
25
1.0
0.9
Zth(j-l)/R th(j-l)
SMB-Flat
0.8
0.1
0.7
0.6
0.5
0.4
0.01
0.3
0.2
t p(µs)
1
DS11461 - Rev 2
10
100
Single pulse
0.1
0.001
1000
0.0
1.E-04
t p (s)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
page 3/9
STPS3H100-Y
Characteristics (curves)
Figure 5. Reverse leakage current versus reverse voltage
applied (typical values)
1.E+04
Figure 6. Junction capacitance versus reverse voltage
applied (typical values)
IR(µA)
C(pF)
1000
F = 1 MHz
1.E+03
= 30 mV
V
OSC
RMS
T = 25 °C
j
Tj = 150 °C
Tj = 125 °C
1.E+02
Tj = 100 °C
1.E+01
100
Tj = 75 °C
1.E+00
Tj = 50 °C
1.E-01
Tj = 25 °C
VR(V)
VR(V)
10
1.E-02
0
10
20
30
40
50
60
70
80
90
1
100
Figure 7. Forward voltage drop versus forward current
(typical values)
10.00
10
100
Figure 8. Forward voltage drop versus forward current
(maximum values)
IF(A)
10.00
IF(A)
1.00
1.00
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
0.10
0.10
VF(V)
VF(V)
0.01
0.0
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.0
Figure 9. Thermal resistance junction to ambient versus copper surface under each lead (SMB flat, typical
values)
200
Rth(j-a)(°C/W)
SMB flat
Epoxy printed board FR4, copper thickness: 35 μm
150
100
50
SCu (cm²)
0
0.0
DS11461 - Rev 2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
page 4/9
STPS3H100-Y
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
2.1
SMB Flat package information
•
•
Epoxy meets UL94, V0
Lead-free package
Figure 10. SMB Flat package outline
A
c
D
L 2x
L1 2 x
E
E1
L2 2 x
b
Table 4. SMB Flat mechanical data
Dimensions
Ref.
Millimeters
Min.
DS11461 - Rev 2
Typ.
Inches (for reference only)
Max.
Min.
Typ.
Max.
A
0.90
1.10
0.035
0.043
b
1.95
2.20
0.077
0.087
c
0.15
0.40
0.006
0.016
D
3.30
3.95
0.130
0.156
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.159
0.181
L
0.75
1.50
0.030
0.059
L1
0.40
0.016
L2
0.60
0.024
page 5/9
STPS3H100-Y
SMB Flat package information
Figure 11. Footprint recommendations, dimensions in mm (inches)
1.20
(0.047)
3.44
(0.136)
1.20
(0.047)
2.07
(0.082)
5.84
(0.230)
millimeters
(inches)
DS11461 - Rev 2
page 6/9
STPS3H100-Y
Ordering Information
3
Ordering information
Table 5. Ordering information
DS11461 - Rev 2
Order code
Marking
Package
Weight
Base qty.
Delivery mode
STPS3H100UFY
3H100Y
SMB Flat
0.050 g
5000
Tape and reel
page 7/9
STPS3H100-Y
Revision history
Table 6. Document revision history
DS11461 - Rev 2
Date
Version
Changes
07-Nov-2016
1
Initial release.
14-Jan-2020
2
Updated Figure 3. Minor text changes to improve readability.
page 8/9
STPS3H100-Y
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS11461 - Rev 2
page 9/9
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