STQ1HNK60R

STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH™ MOSFET Table 1: General Features TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 s s s s s s Figure 1: Package ID 1A 1A 0.4 A 0.4 A Pw 30 W 30 W 3W 3.3 W Ω Ω Ω Ω VDSS 600 600 600 600 V V V V RDS(on) < < < < 8.5 8.5 8.5 8.5 3 1 TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92 (Ammopack) DPAK 2 3 2 1 1 2 3 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. SOT-223 IPAK Figure 2: Internal Schematic Diagram APPLICATIONS s LOW POWER BATTERY CHARGERS s SWITH MODE LOW POWER SUPPLIES(SMPS) s LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS) Table 2: Order Codes Part Number STD1NK60T4 STD1NK60-1 STQ1HNK60R STQ1HNK60R-AP STN1HNK60 Marking D1NK60 D1NK60 1HNK60R 1HNK60R 1HNK60 Package DPAK IPAK TO-92 TO-92 SOT-223 Packaging TAPE & REEL TUBE BULK AMMOPAK TAPE & REEL Rev. 2 November 2004 1/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Parameter DPAK / IPAK Value TO-92 SOT-223 Unit V V V 0.4 0.25 1.6 3.3 0.025 A A A W W/°C V/ns °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 1.0 0.63 4 30 0.24 600 600 ± 30 0.4 0.25 1.6 3 0.025 3 -55 to 150 ( ) Pulse width limited by safe operating area (1) ISD ≤ 1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 4: Thermal Data DPAK/IPAK Rthj-case Rthj-amb Rthj-lead Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Junction-lead Max Maximum Lead Temperature For Soldering Purpose 4.16 100 -275 TO-92 -120 40 260 SOT-223 -37.87 (#) -Unit °C/W °C/W °C/W °C (#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 1 25 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 30V VDS = VGS, ID = 250 µA VGS = 10V, ID = 0.5 A 2.25 3 8 Min. 600 1 50 ±100 3.7 8.5 Typ. Max. Unit V µA µA nA V Ω 2/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tr Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID= 0.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1 156 23.5 3.8 6.5 5 19 25 7 1.1 3.7 10 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDD = 300 V, ID = 0.5 A, RG= 4.7 Ω, VGS = 10 V (Resistive Load see, Figure 21) VDD = 480V, ID = 1 A, VGS = 10V, RG= 4.7 Ω (see, Figure 23) Table 8: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, VGS = 0 ISD = 1.0 A, di/dt = 100 A/µs VDD = 25V, Tj = 25°C (see test circuit, Figure 22) ISD = 1.0 A, di/dt = 100 A/µs VDD = 25V, Tj = 150°C (see test circuit, Figure 22) 140 240 3.3 229 377 3.3 Test Conditions Min. Typ. Max. 1 4 1.6 Unit A A V ns µC A ns µC A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 3: .Safe Operating Area For SOT-223 Figure 6: Thermal Impedance For SOT-223 Figure 4: Safe Operating Area For DPAK/IPAK Figure 7: Thermal Impedance For DPAK/IPAK Figure 5: Safe Operating Area For TO-92 Figure 8: Thermal Impedance For TO-92 4/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 9: Output Characteristics Figure 12: Transfer Characteristics Figure 10: Transconductance Figure 13: Gate Charge vs Gate-source Voltage Figure 11: Capacitance Variations Figure 14: Static Drain-source On Resistance 5/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 15: Normalized Gate Thereshold Voltage vs Temperature Figure 18: Normalized On Resistance vs Temperature Figure 16: Source-Drain Forward Characteristics Figure 19: Normalized BVDSS vs Temperature Figure 17: Maximum Avalanche Energy vs Temperature Figure 20: Max Id Current vs Tc 6/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 21: Switching Times Test Circuit For Resistive Load Figure 23: Gate Charge Test Circuit Figure 22: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-92 MECHANICAL DATA mm. DIM. MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5° TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.094 0.044 0.50 0.085 0.036 0.016 5° TYP. MAX. 0.194 0.020 0.194 0.155 0.105 0.055 0.610 0.094 0.060 0.022 inch 8/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-92 AMMOPACK mm. MIN. 4.45 3.30 TYP MAX. 4.95 3.94 1.6 2.3 0.41 12.5 5.65 2.44 -2 17.5 5.7 8.5 18.5 15.5 3.8 16 4 18 6 9 12.7 6.35 2.54 0.56 12.9 7.05 2.94 2 19 6.3 9.25 0.5 20.5 16.5 25 4.2 0.9 11 3 -1 1 0.11 -0.04 0.04 0.15 0.157 0.72 0.61 0.63 0.016 0.49 0.22 0.09 -0.08 0.69 0.22 0.33 0.71 0.23 0.35 0.5 0.25 0.1 MIN. 0.170 0.130 inch TYP. MAX. 0.194 0.155 0.06 0.09 0.022 0.51 0.27 0.11 0.08 0.74 0.24 0.36 0.02 0.80 0.65 0.98 0.16 0.035 0.43 DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W2 H H0 H1 D0 t L l1 delta P 9/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 SOT-223 MECHANICAL DATA mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. inch TYP. MAX. 0.071 0.031 0.122 0.013 0.264 DIM. P008B 10/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 11/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 12/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 * on sales type 13/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Table 9: Revision History Date 22-Nov-2004 Revision 2 Description of Changes Added SOT-223 Package and new stylesheet 14/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 15/15