STF2HNK60Z

STD2HNK60Z, STD2HNK60Z-1 Datasheet N-channel 600 V, 3.5 Ω typ., 2 A SuperMESH Power MOSFETs in DPAK and IPAK packages Features Order codes TAB STD2HNK60Z TAB STD2HNK60Z-1 3 1 12 DPAK 3 IPAK • • • • VDS RDS(on) max. ID 600 V 4.8 Ω 2A 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected Applications D(2, TAB) • Switching applications Description G(1) S(3) AM01476v1_tab These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in onresistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status links STD2HNK60Z STD2HNK60Z-1 Product summary Order code STD2HNK60Z Marking D2HNK60Z Package DPAK Packing Tape and reel Order code STD2HNK60Z-1 Marking D2HNK60Z Package IPAK Packing Tube DS3646 - Rev 7 - October 2021 For further information contact your local STMicroelectronics sales office. www.st.com STD2HNK60Z, STD2HNK60Z-1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ±30 V Drain current (continuous) at TC = 25 °C 2.0 Drain current (continuous) at TC = 100 °C 1.26 ID A IDM (1) Drain current (pulsed) 8 A PTOT Total power dissipation at TC = 25 °C 45 W ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) 2 kV 4.5 V/ns dv/dt(2) TSTG TJ Peak diode recovery voltage slope Storage temperature range Operating junction temperature range -55 to 150 °C °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 2 A, di/dt ≤ 200 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient RthJB (1) Thermal resistance, junction-to-board Value DPAK IPAK °C/W 2.77 100 50 Unit °C/W °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol DS3646 - Rev 7 Parameter IAR Avalanche current, repetitive or not repetitive (tp limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR; VDD = 50 V) Value Unit 2 A 120 mJ page 2/21 STD2HNK60Z, STD2HNK60Z-1 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 600 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 μA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 1 A VGS = 0 V, VDS = 600 V, TC = 125 °C Unit V VGS = 0 V, VDS = 600 V IDSS Max. 1 (1) 50 μA ±10 μA 3.75 4.5 V 3.5 4.8 Ω Min. Typ. Max. Unit - 280 pF - 38 pF - 7 pF pF 3 1. Specified By Design – Not tested in production. Table 5. Dynamic characteristics Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 30 Qg Total gate charge VDD = 480 V, ID = 2 A, - 11 Qgs Gate-source charge - 2.25 nC Qgd Gate-drain charge VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) - 6 nC VDS = 25 V, f = 1 MHz, VGS = 0 V 15 (2) nC 1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2. Specified By Design – Not tested in production. Table 6. Switching times Symbol td(on) tr td(off) tf DS3646 - Rev 7 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 1 A, - 10 - ns Rise time RG = 4.7 Ω , VGS = 10 V - 30 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 23 - ns - 50 - ns Fall time page 3/21 STD2HNK60Z, STD2HNK60Z-1 Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 2 A Source-drain current (pulsed) - 8 A - 1.6 V Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current VGS = 0 V, ISD = 2 A - 178 ns (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 445 nC - 5 A ISD = 2 A, di/dt = 100 A/μs, VDD = 20 V trr Reverse recovery time ISD = 2 A, di/dt = 100 A/μs, - 200 ns Qrr Reverse recovery charge VDD = 20 V, TJ = 150 °C - 500 nC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 5 A 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS3646 - Rev 7 page 4/21 STD2HNK60Z, STD2HNK60Z-1 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area ID (A) Figure 2. Thermal impedance GADG280920211324SOA K IDM GADG280920211324ZTH duty=0.5 on ) 2 DS ( O is pera lim tio ite n i db nt y R his a rea tp=10µs 100 tp=100µs 10 -1 RDS(on) max. 101 02 V(BR)DSS TC = 25 °C TJ ≤ 150 °C single pulse 10-1 100 05 tp=1ms 0.01 Zth = KRthJ-c duty = tp / T Single pulse tp=10ms VDS (V) 102 tp 10 T -2 10 -5 10 -4 10 -3 10 -2 tp (s) Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Normalized V(BR)DSS vs temperature Figure 6. Static drain-source on-resistance V(BR)DSS (norm.) 1.10 GADG280920211325BDV ID = 1 mA 1.05 1.00 0.95 0.90 0.85 -75 DS3646 - Rev 7 -25 25 75 125 Tj (°C) page 5/21 STD2HNK60Z, STD2HNK60Z-1 Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on-resistance vs temperature RDS(on) (norm.) 2.5 GADG280920211325RON VGS = 10 V 2.0 1.5 1.0 0.5 0.0 -75 Figure 11. Source-drain diode forward characteristics -25 25 75 125 Tj (°C) Figure 12. Maximum avalanche energy vs temperature ID = 2 A VDD = 50 V DS3646 - Rev 7 page 6/21 STD2HNK60Z, STD2HNK60Z-1 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A L 100 µH fast diode B B B G RG VD 3.3 µF D + Figure 16. Unclamped inductive load test circuit 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD VDD VGS 0 AM01472v1 DS3646 - Rev 7 10% 0 ID VDS 10% 90% 10% AM01473v1 page 7/21 STD2HNK60Z, STD2HNK60Z-1 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 DPAK (TO-252) type A package information Figure 19. DPAK (TO-252) type A package outline 0068772_A_30 DS3646 - Rev 7 page 8/21 STD2HNK60Z, STD2HNK60Z-1 DPAK (TO-252) type A package information Table 8. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS3646 - Rev 7 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 9/21 STD2HNK60Z, STD2HNK60Z-1 DPAK (TO-252) type C package information 4.2 DPAK (TO-252) type C package information Figure 20. DPAK (TO-252) type C package outline 0068772_C_29 DS3646 - Rev 7 page 10/21 STD2HNK60Z, STD2HNK60Z-1 DPAK (TO-252) type C package information Table 9. DPAK (TO-252) type C mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.25 E 6.50 E1 4.70 e 5.46 6.10 6.20 6.60 6.70 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 2.90 REF 0.90 L3 L4 1.25 0.51 BSC 0.60 L6 DS3646 - Rev 7 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 11/21 STD2HNK60Z, STD2HNK60Z-1 DPAK (TO-252) type C package information Figure 21. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_30 DS3646 - Rev 7 page 12/21 STD2HNK60Z, STD2HNK60Z-1 DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 22. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS3646 - Rev 7 page 13/21 STD2HNK60Z, STD2HNK60Z-1 DPAK (TO-252) packing information Figure 23. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS3646 - Rev 7 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 14/21 STD2HNK60Z, STD2HNK60Z-1 IPAK (TO-251) type A package information 4.4 IPAK (TO-251) type A package information Figure 24. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev15 DS3646 - Rev 7 page 15/21 STD2HNK60Z, STD2HNK60Z-1 IPAK (TO-251) type A package information Table 11. IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H DS3646 - Rev 7 Max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° 1.00 page 16/21 STD2HNK60Z, STD2HNK60Z-1 IPAK (TO-251) type C package information 4.5 IPAK (TO-251) type C package information Figure 25. IPAK (TO-251) type C package outline 0068771_IK_typeC_rev15 DS3646 - Rev 7 page 17/21 STD2HNK60Z, STD2HNK60Z-1 IPAK (TO-251) type C package information Table 12. IPAK (TO-251) type C package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 DS3646 - Rev 7 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.80 1.00 1.20 L2 0.90 1.08 1.25 θ1 3° 5° 7° θ2 1° 3° 5° page 18/21 STD2HNK60Z, STD2HNK60Z-1 Revision history Table 13. Document revision history Date Revision Changes 09-Mar-2004 1 First release. 23-Mar-2004 2 Modified title 02-Apr-2005 3 Added new section: Electrical characteristics (curves) 06-Mar-2006 4 Inserted DPAK. The document has been reformatted 25-May-2012 5 Corrected unit in Table 5: On/off states Removed maturity status indication from cover page. The document status is production data. 04-Jun-2018 6 Updated title and features in cover page, Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 4 Package information. Minor text changes. The part numbers STF2HNK60Z and STQ2HNK60ZR-AP have been moved to a separate datasheet and the document has been updated accordingly. Modified Table 7. Source-drain diode. 06-Oct-2021 7 Modified Figure 1. Safe operating area , Figure 2. Thermal impedance, Figure 5. Normalized V(BR)DSS vs temperature and Figure 10. Normalized on-resistance vs temperature. Updated Section 4 Package information. DS3646 - Rev 7 page 19/21 STD2HNK60Z, STD2HNK60Z-1 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.4 IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.5 IPAK (TO-251) type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 DS3646 - Rev 7 page 20/21 STD2HNK60Z, STD2HNK60Z-1 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS3646 - Rev 7 page 21/21