STS1HNK60

STS1HNK60 N-CHANNEL 600V - 8Ω - 0.3A SO-8 SuperMESH™Power MOSFET TYPE STS1HNK60 ■ ■ ■ ■ ■ VDSS RDS(on) ID Pw 600 V < 8.5 Ω 0.3 A 2W TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK SO-8 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. ) s ( ct APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) ■ LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) ■ LOW POWER BATTERY CHARGERS ■ c u d e t le ) s t( o r P INTERNAL SCHEMATIC DIAGRAM o s b O - u d o r P e t e l o s b O ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STS1HNK60 S1HNK60 SO-8 TAPE & REEL August 2003 1/8 STS1HNK60 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 0.3 A ID Drain Current (continuous) at TC = 100°C 0.19 A Drain Current (pulsed) 1.2 A IDM (
) PTOT Total Dissipation at TC = 25°C 2 W 0.016 W/°C 3 V/ns -65 to 150 °C Derating Factor dv/dt (1) Tj Tstg Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature (
) Pulse width limited by safe operating area (1) ISD ≤0.3A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. c u d THERMAL DATA Rthj-amb e t le Thermal Resistance Junction-ambient Max ) s ( ct ) s t( o r P 62.5 °C/W o s b O - ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS Parameter o r P e Zero Gate Voltage Drain Current (VGS = 0) t e l o Test Conditions ID = 1 mA, VGS = 0 VGS = ± 30 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 0.5 A s b O Min. Typ. Max. 600 2.25 Unit V VDS = Max Rating VDS = Max Rating, TC = 125 °C Gate-body Leakage Current (VDS = 0) IGSS 2/8 du Drain-source Breakdown Voltage 1 50 µA µA ±100 nA 3 3.7 V 8 8.5 Ω STS1HNK60 ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Test Conditions Forward Transconductance Min. Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS > ID(on) x RDS(on)max, ID = 0.5 A Typ. VDS = 25V, f = 1 MHz, VGS = 0 Max. Unit 1 S 156 23.5 3.8 pF pF pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 0.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 6.5 5 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480 V, ID = 1 A, VGS = 10V, RG = 4.7Ω 7 1.1 3.4 Parameter Test Conditions P e let Turn-off Delay Time Fall Time VDD = 300 V, ID = 0.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 1.0 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current r P e (s) ct u d o Forward On Voltage ro Min. td(off) tf o s b O Test Conditions Min. Typ. ) s t( 10 Max. nC nC nC Unit 19 25 ns ns 24 25 44 ns ns ns Typ. ISD = 0.3 A, VGS = 0 ISD = 0.3 A, di/dt = 100 A/µs VDD = 25 V, Tj = 150°C (see test circuit, Figure 5) Unit ns ns c u d SWITCHING OFF Symbol Max. Max. Unit 0.3 1.2 A A 1.6 229 377 3.3 V ns µC A t e l o Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. s b O 3/8 STS1HNK60 Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics c u d e t le Transconductance r P e u d o t e l o s b O 4/8 ) s ( ct o r P o s b O - Static Drain-source On Resistance ) s t( STS1HNK60 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. c u d e t le ) s ( ct u d o Source-drain Diode Forward Characteristics r P e ) s t( Normalized On Resistance vs Temperature o r P o s b O - Normalized BVDSS vs Temperature t e l o s b O 5/8 STS1HNK60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit c u d e t le ) s ( ct u d o Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times r P e t e l o s b O 6/8 o s b O - o r P ) s t( STS1HNK60 SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. MAX. a1 1.75 0.1 0.068 0.25 a2 0.003 0.009 a3 1.65 0.65 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 L 0.4 1.27 0.015 M e t le 0.6 S 8 (max.) ) s ( ct c u d ) s t( 0.244 o r P 0.157 0.050 0.023 o s b O - u d o r P e t e l o s b O 0016023 7/8 STS1HNK60 c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics s b O © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8