STTH602CBY-TR

STTH602C-Y Automotive ultrafast recovery diode Datasheet - production data Description A1 K A2 This dual center tap diode is suited for switch mode power supplies and high frequency DC to DC converters. Packaged in DPAK, this device is intended for use in low voltage high frequency inverters, freewheeling and polarity protection for automotive applications. A2 K Table 1: Device summary A1 Symbol Value IF(AV) 2x3A VRRM 200 V Features VF(typ.) 0.80 V        Tj(max.) 175 °C Trr(typ.) 14 ns DPAK AEC-Q101 qualified Suited for SMPS Low losses Low forward and reverse recovery time High surge current capability High junction temperature PPAP capable March 2017 DocID023250 Rev 2 This is information on a product in full production. 1/9 www.st.com Characteristics 1 STTH602C-Y Characteristics Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) Forward rms current 11 A IF(AV) Average forward current δ = 0.5, square wave Tc = 160 °C 3 Tc = 155 °C 6 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 60 A Tstg Storage temperature range -65 to +175 °C Operating junction temperature range -40 to +175 °C Max. value Unit Tj A Table 3: Thermal parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Per diode 5 Per device 3 °C/W 1 When the two diodes 1 and 2 are used simultaneously: ΔTj(diode 1) = P (diode 1) x Rth(j-c) (Per diode) + P (diode 2) x Rth(c) Table 4: Static electrical characteristics Symbol IR(1) Parameter Test conditions Reverse leakage current Tj = 25 °C Tj = 125 °C Tj = 25 °C VF(2) Forward voltage drop Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 3 A IF = 6 A Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.85 x IF(AV) + 0.033 x IF2(RMS) 2/9 DocID023250 Rev 2 Min. Typ. - Max. 3 - 3 30 - 0.98 1.1 - 0.8 0.95 - 1.1 1.25 - 0.9 1.05 Unit µA V STTH602C-Y Characteristics Table 5: Dynamic characteristics Symbol trr IRM tfr VFP Parameter Test conditions Min. Typ. Max. IF = 1 A, dIF/dt = -100 A/μs, VR = 30 V, Tj = 25 °C - 14 20 IF = 1 A, dIF/dt = -50 A/μs, VR = 30 V, Tj = 25 °C - 21 30 Reverse recovery current IF = 3 A, dIF/dt = 200 A/μs, VR = 160 V, Tj = 125 °C - 4 5.5 Forward recovery time IF = 3 A, dIF/dt = 200 A/μs VFR = 1.1 x VFmax, Tj = 25 °C - 24 ns Forward recovery voltage IF = 3 A, dIF/dt = 200 A/μs, Tj = 25 °C - 3.7 V Reverse recovery time DocID023250 Rev 2 Unit ns A 3/9 Characteristics 1.1 STTH602C-Y Characteristics (curves) Figure 2: Forward voltage drop versus forward current (typical values, per diode) Figure 1: Peak current versus duty cycle (per diode) 100 IM(A) T IM δ = tp/T 80 tp 60 P = 10 W 40 P = 5W P = 3W 20 δ 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Figure 3: Forward voltage drop versus forward current (maximum values, per diode) Figure 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode) 1.0 Zth(j-c)/Rth(j-c) Single - pulse tp(s) 0.1 1.E-03 Figure 5: Junction capacitance versus reverse applied voltage (typical values, per diode) 100 F = 1 MHz Vosc = 30 mVRM S Tj = 25 °C 10 VR(V) 1 4/9 10 100 1.E-01 1.E+00 Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) C(pF) 1 1.E-02 1000 DocID023250 Rev 2 STTH602C-Y Characteristics Figure 7: Reverse recovery time versus dIF/dt (typical values, per diode) Figure 8: Reverse recovery current versus dIF/dt (typical values, per diode) Figure 9: Dynamic parameters versus junction temperature Figure 10: Thermal resistance junction to ambient versus copper surface under tab for DPAK package (typical values) Rth(j-a) (°C/W) 100 DPAK 90 80 70 60 50 40 30 Epoxy printed board FR4, eCu= 35 µm 20 10 SCu(cm²) 0 0 DocID023250 Rev 2 5 10 15 20 25 30 35 5/9 40 Package information 2 STTH602C-Y Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.   2.1 Epoxy meets UL94, V0 Cooling method: by conduction (C) DPAK package information Figure 11: DPAK package outline 6/9 DocID023250 Rev 2 STTH602C-Y Package information Table 6: DPAK mechanical data Dimensions Dim. Millimeters Min. Typ. Inches Max. Min. Typ. Max. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b4 5.20 5.40 0.205 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 D1 4.95 5.25 0.195 E 6.40 6.60 0.252 E1 5.10 5.20 5.30 0.201 0.205 0.209 e 2.16 2.28 2.40 0.085 0.090 0.094 e1 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L 1.00 1.50 0.039 0.059 (L1) 2.60 2.80 3.00 0.102 0.110 0.118 L2 0.65 0.80 0.95 0.026 0.031 0.037 L4 0.60 1.00 0.024 R V2 5.10 0.20 0° 0.201 0.207 0.260 0.039 0.008 8° 0° 8° Figure 12: DPAK recommended footprint (dimensions are in mm) DocID023250 Rev 2 7/9 Ordering information 3 STTH602C-Y Ordering information Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STTH602CBY-TR STTH6 02CBY DPAK 0.30 g 2500 Tape and reel Revision history Table 8: Document revision history 8/9 Date Revision Changes 24-Oct-2012 1 First issue. 16-Mar-2017 2 Updated Table 3: "Thermal parameters". Minor text changes. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID023250 Rev 2 9/9