STWA70N60DM6

STW70N60DM6, STWA70N60DM6 Datasheet N-channel 600 V, 36 mΩ typ., 62 A, MDmesh DM6 Power MOSFETs in TO‑247 and TO‑247 long leads packages Features Order code STW70N60DM6 1 2 3 1 2 3 TO-247 long leads TO-247 D(2, TAB) STWA70N60DM6 VDS RDS(on) max. ID 600 V 42 mΩ 62 A • • Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications • S(3) AM01476v1_tab Switching applications Description These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status links STW70N60DM6, STWA70N60DM6 Product summary STW70N60DM6 Order code STW70N60DM6 Marking 70N60DM6 Package TO-247 Packing Tube STWA70N60DM6 Order code STWA70N60DM6 Marking 70N60DM6 Package TO-247 long leads Packing Tube DS12274 - Rev 5 - February 2023 For further information contact your local STMicroelectronics sales office. www.st.com STW70N60DM6, STWA70N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 62 A ID Drain current (continuous) at TC = 100 °C 39 A Drain current (pulsed) 220 A Total power dissipation at TC = 25 °C 390 W dv/dt(2) Peak diode recovery voltage slope 100 V/ns di/dt(2) Peak diode recovery current slope 1000 A/µs dv/dt(3) MOSFET dv/dt ruggedness 100 V/ns Tstg Storage temperature range VGS IDM (1) PTOT TJ Parameter Operating junction temperature range -55 to 150 °C °C 1. Pulse width is limited by safe operating area. 2. ISD ≤ 62 A, VDS (peak) < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 480 V. Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value Unit 0.32 °C/W 50 °C/W Value Unit 7 A 1850 mJ Table 3. Avalanche characteristics Symbol DS12274 - Rev 5 Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) page 2/14 STW70N60DM6, STWA70N60DM6 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. 600 Zero gate voltage drain current IGSS 1 VGS = 0 V, VDS = 600 V, TJ = 125 100 °C(1) Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance VGS = 10 V, ID= 31 A Unit V VGS = 0 V, VDS = 600 V IDSS Max. μA ±5 μA 4 4.75 V 36 42 mΩ Min. Typ. Max. Unit - 4360 - - 235 - - 13 - 3.25 1. Specified by design, not tested in production. Table 5. Dynamic characteristics Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 697 - RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.5 - Qg Total gate charge VDD = 480 V, ID = 62 A, - 99 - Qgs Gate-source charge - 28 - Qgd Gate-drain charge VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) - 44 - VDS = 100 V, f = 1 MHz, VGS = 0 V pF Ω nC 1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 6. Switching times Symbol td(on) tr td(off) tf DS12274 - Rev 5 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 31 A, - 28 - ns Rise time RG = 4.7 Ω , VGS = 10 V - 49 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 96 - ns - 12 - ns Fall time page 3/14 STW70N60DM6, STWA70N60DM6 Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 62 A ISDM Source-drain current (pulsed) - 220 A VSD(2) Forward on voltage VGS = 0 V, ISD = 62 A - 1.6 V trr Reverse recovery time ISD = 62 A, di/dt = 100 A/μs, - 138 - ns Qrr Reverse recovery charge VDD = 60 V - 0.69 - µC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 10 - A Reverse recovery time ISD = 62 A, di/dt = 100 A/μs, - 340 - ns Reverse recovery charge VDD = 60 V, TJ = 150 °C - 4.6 - µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 27 - A (1) trr Qrr IRRM 1. Pulse width is limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DS12274 - Rev 5 page 4/14 STW70N60DM6, STWA70N60DM6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) GADG081020181656SOA AM09125v1 K d=0.5 Operation in this area is limited by RDS(on) 10 2 0.2 0.1 tp =10 µs 10 1 0.05 -1 tp =100 µs 10 0 10 0.01 tp =1 ms 10 -1 10 0.02 Single pulse, TC = 25 °C, TJ ≤ 150 °C, VGS = 10 V tp =10 ms -2 10 -1 10 0 10 1 VDS (V) 10 2 tp t -2 10 -4 10 Figure 3. Output characteristics ID (A) Zth =k * RthJC d=t p/t Single pulse -2 -3 -1 10 10 t p(s) 10 Figure 4. Transfer characteristics ID (A) GADG081020181655OCH VGS = 9, 10 V 200 GADG081020181655TCH 200 VGS = 8 V 160 160 VDS = 18 V VGS = 7 V 120 120 80 80 VGS = 6 V 40 40 VGS = 5 V 0 0 4 8 12 16 VDS (V) Figure 5. Gate charge vs gate-source voltage VDS (V) GADG081020181656QVG VDD = 480 V, ID = 62 A 600 VGS (V) 0 4 10 38 8 37 300 6 36 200 4 35 100 2 34 400 0 0 DS12274 - Rev 5 20 40 60 80 100 120 0 Qg (nC) 7 RDS(on) (mΩ) 39 VDS 6 8 9 VGS (V) Figure 6. Static drain-source on-resistance 12 500 5 33 0 GADG081020181654RID VGS = 10 V 10 20 30 40 50 60 ID (A) page 5/14 STW70N60DM6, STWA70N60DM6 Electrical characteristics (curves) Figure 8. Coss stored energy vs VDS Figure 7. Capacitance variations C (pF) E (μJ) GADG081020181655CVR GADG081020181656EOS 40 10 4 CISS 10 3 10 2 32 24 COSS f = 1 MHz 16 8 10 1 10 -1 CRSS 10 0 10 1 10 2 VDS (V) Figure 9. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG081020181654VTH 100 200 300 400 500 600 VDS (V) Figure 10. Normalized on-resistance vs temperature RDS(on) (norm.) GADG081020181654RON 2.5 1.1 2.0 1.0 VGS = 10 V 1.5 0.9 ID = 250 µA 0.8 1.0 0.5 0.7 0.6 -75 0 0 -25 25 75 125 Tj (°C) Figure 11. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) GADG081020181655BDV 0.0 -75 -25 25 75 Tj (°C) Figure 12. Source-drain diode forward characteristics VSD (V) GADG081020181655SDF Tj = -50 °C 1.1 1.10 125 1.0 1.05 0.9 Tj = 25°C 1.00 ID = 1 mA 0.8 0.95 0.90 0.85 -75 DS12274 - Rev 5 Tj = 150 °C 0.7 0.6 -25 25 75 125 Tj (°C) 0.5 0 10 20 30 40 50 60 ISD (A) page 6/14 STW70N60DM6, STWA70N60DM6 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD RL RL 2200 + μF 3.3 μF VDD VD IG= CONST VGS + pulse width RG VGS D.U.T. D.U.T. 100 Ω 2.7 kΩ 2200 μF pulse width VG 47 kΩ 1 kΩ AM01469v10 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A L 100 µH fast diode B B B G RG VD 3.3 µF D + Figure 16. Unclamped inductive load test circuit 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD VDD VGS 0 AM01472v1 DS12274 - Rev 5 10% 0 ID VDS 10% 90% 10% AM01473v1 page 7/14 STW70N60DM6, STWA70N60DM6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 19. TO-247 package outline aaa 0075325_10 DS12274 - Rev 5 page 8/14 STW70N60DM6, STWA70N60DM6 TO-247 package information Table 8. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 aaa DS12274 - Rev 5 Typ. 5.50 5.70 0.04 0.10 page 9/14 STW70N60DM6, STWA70N60DM6 TO-247 long leads package information 4.2 TO-247 long leads package information Figure 20. TO-247 long leads package outline 8463846_3 DS12274 - Rev 5 page 10/14 STW70N60DM6, STWA70N60DM6 TO-247 long leads package information Table 9. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 P 3.50 Q 5.60 S 6.05 aaa DS12274 - Rev 5 4.30 3.60 3.70 6.00 6.15 6.25 0.04 0.10 page 11/14 STW70N60DM6, STWA70N60DM6 Revision history Table 10. Document revision history Date Revision 02-Nov-2017 1 Changes First release. Removed maturity status indication from cover page. The document status is production data. 10-Oct-2018 2 Updated Section 1 Electrical ratings and Section 2 Electrical characteristics. Added Section 2.1 Electrical characteristics (curves). Minor text changes. 02-May-2019 3 01-Jun-2020 4 Updated Table 6. Switching times. Minor text changes. Updated Table 1. Absolute maximum ratings and Table 7. Source drain diode. Updated Table 4. On/off states. 21-Feb-2023 5 Updated Coss eq. on Table 5. Dynamic characteristics. Updated Section 4 Package information. Minor text changes. DS12274 - Rev 5 page 12/14 STW70N60DM6, STWA70N60DM6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS12274 - Rev 5 page 13/14 STW70N60DM6, STWA70N60DM6 IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2023 STMicroelectronics – All rights reserved DS12274 - Rev 5 page 14/14