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VND830LSP-E

VND830LSP-E

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    POWERSO-10_7.5X9.4MM-EP

  • 描述:

    IC PWR DRIVER N-CHAN 1:1 PWRSO10

  • 数据手册
  • 价格&库存
VND830LSP-E 数据手册
VND830LSP-E Double channel high-side driver Features Type RDS(on) IOUT VCC VND830LSP-E 60 mΩ 18 A(1) 36 V(1) 10 1. Per channel 1 PowerSO-10 ■ ECOPACK®: lead free and RoHS compliant ■ Automotive Grade: compliance with AEC guidelines ■ Very low standby current ■ CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection ■ Thermal shutdown protection and diagnosis ■ Undervoltage shutdown ■ Overvoltage clamp ■ Output stuck to VCC detection ■ Load current limitation ■ Reverse battery protection ■ Electrostatic discharge protection Description The VND830LSP-E is a monolithic device made using STMicroelectronics™ VIPower™ M0-3 technology. It is intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The device detects open-load condition both in on-state and off-state. The open-load threshold is aimed at detecting the 5 W/12 V standard bulb as an open-load fault in the on-state. Device automatically turns off in case of ground pin disconnection. Table 1. Device summary Order codes Package Power-SO-10™ September 2013 Tube Tape and reel VND830LSP-E VND830LSPTR-E Doc ID 10882 Rev 4 1/27 www.st.com 1 Contents VND830LSP-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.1 4 6 2/27 3.1.1 Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 16 3.1.2 Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 17 3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.3 MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.4 Open-load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.5 PowerSO-10 maximum demagnetization energy (VCC = 13.5 V) 19 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.1 5 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 16 PowerSO-10 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5.2 PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5.3 PowerSO-10 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Doc ID 10882 Rev 4 VND830LSP-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 5 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Power output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 VCC - output diode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Status pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Switching (VCC = 13 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Open-load detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical transient requirements on VCC pin (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical transient requirements on VCC pin (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical transient requirements on VCC pin (part 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Doc ID 10882 Rev 4 3/27 List of figures VND830LSP-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. 4/27 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Status timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Off-state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Status low output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Satus clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 On-state resistance vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 On-state resistance vs VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Open-load on-state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Open-load off-state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 ILIM vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Open-load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Maximum turn- off current versus load inductance(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 PowerSO-10 PC board(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . . 20 PowerSO-10 thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . 21 Thermal fitting model of a double channel HSD in PowerSO-10 . . . . . . . . . . . . . . . . . . . . 21 PowerSO-10 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 PowerSO-10 suggested pad layout and tube shipment (no suffix). . . . . . . . . . . . . . . . . . . 25 Tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Doc ID 10882 Rev 4 VND830LSP-E 1 Block diagram and pin description Block diagram and pin description Figure 1. Block diagram Vcc Vcc CLAMP OVERVOLTAGE UNDERVOLTAGE GND CLAMP 1 OUTPUT1 INPUT1 DRIVER 1 CLAMP 2 STATUS1 CURRENT LIMITER 1 DRIVER 2 LOGIC OUTPUT2 OVERTEMP. 1 OPEN LOAD ON 1 CURRENT LIMITER 2 INPUT2 OPEN LOAD OFF 1 OPEN LOAD ON 2 STATUS2 OPEN LOAD OFF 2 OVERTEMP. 2 Figure 2. Configuration diagram (top view) GROUND INPUT 1 STATUS 1 STATUS 2 INPUT 2 6 7 8 9 5 4 3 10 1 OUTPUT 1 OUTPUT 1 N.C. OUTPUT 2 OUTPUT 2 2 11 VCC PowerSO-10 Table 2. Suggested connections for unused and not connected pins Connection / pin Status N.C. Output Input Floating X X X X To ground X Doc ID 10882 Rev 4 Through 10KΩ resistor 5/27 Electrical specifications 2 VND830LSP-E Electrical specifications Figure 3. Current and voltage conventions IS VCC IIN1 VF1(1) VCC IOUT1 INPUT1 VIN1 OUTPUT1 VOUT1 ISTAT1 STATUS 1 VSTAT1 IOUT2 IIN2 VIN2 OUTPUT2 INPUT2 ISTAT2 VOUT2 STATUS 2 VSTAT2 GND IGND 1. VFn = VCCn - VOUTn during reverse battery condition. 2.1 Absolute maximum ratings Stressing the device above the rating listed in Table 3 may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics sure program and other relevant quality document. Table 3. Absolute maximum ratings Symbol Value Unit 41 V VCC DC supply voltage -VCC Reverse DC supply voltage -0.3 V - IGND DC reverse ground pin current -200 mA Internally limited A -6 A IOUT DC output current -IOUT Reverse DC output current IIN DC input current +/- 10 mA ISTAT CD status current +/- 10 mA VESD Electrostatic discharge (Human Body Model: R = 1.5 KΩ; C = 100 pF) – INPUT – STATUS – OUTPUT – VCC 4000 4000 5000 5000 V V V V 74 W Ptot 6/27 Parameter Power dissipation at Tc = 25 °C Doc ID 10882 Rev 4 VND830LSP-E Electrical specifications Table 3. Absolute maximum ratings (continued) Symbol EMAX Value Unit 52 mJ Internally limited °C Maximum switching energy (L = 0.14 mH; RL = 0 Ω; Vbat= 13.5 V; Tjstart = 150 °C; IL = 14 A) Tj Junction operating temperature Tc Case operating temperature -40 to 150 °C Storage temperature -55 to 150 °C TSTG 2.2 Parameter Thermal data Table 4. Symbol Rthj-case Rthj-amb Thermal data Parameter Value Thermal resistance junction-case Thermal resistance junction-ambient Unit 2 52 (1) °C/W (2) 37 °C/W 1. When mounted on a standard single sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick). Horizontal mounting and no artificial air flow. 2. When mounted on a standard single sided FR-4 board with 6 cm2 of Cu (at least 35 µm thick). Horizontal mounting and no artificial air flow. Doc ID 10882 Rev 4 7/27 Electrical specifications 2.3 VND830LSP-E Electrical characteristics Values specified in this section are for 8 V < VCC < 36 V; -40 °C < Tj < 150 °C, unless otherwise specified. (Per each channel). Table 5. Power output Symbol Parameter VCC(1) VUSD(1) VOV(1) RON IS(1) Test conditions Min. Typ. Max. Unit Operating supply voltage 5.5 13 36 V Undervoltage shutdown 3 4 5.5 V Overvoltage shutdown 36 On-state resistance Supply current V IOUT = 2 A; Tj = 25 °C 60 mΩ IOUT = 2 A; VCC > 8 V 120 mΩ Off-state; VCC = 13 V; VIN = VOUT = 0 V 12 40 µA Off-state; VCC=13V; VIN = VOUT = 0 V; Tj = 25 °C 12 25 µA On-state; VCC = 13 V 5 7 mA 0 50 µA -75 0 µA IL(off1) Off-state output current VIN = VOUT = 0 V; VCC = 36 V; Tj = 125 °C IL(off2) Off-state output current VIN = 0 V; VOUT = 3.5 V IL(off3) Off-state output current VIN = VOUT = 0 V; VCC = 13 V; Tj = 125 °C 5 µA IL(off4) Off-state output current VIN = VOUT = 0 V; VCC = 13 V; Tj = 25 °C 3 µA 1. Per device. Table 6. Symbol Protection(1) Min. Typ. Max. Unit Shutdown temperature 150 175 200 °C TR Reset temperature 135 Thyst Thermal hysteresis 7 15 18 23 TTSD Ilim Vdemag Parameter Test conditions VCC = 13 V Current limitation °C 5.5 V < VCC VOL VINn OVER TEMP STATUS TIMING Tj > TTSD VINn VSTATn VSTATn tSDL tDOL(off) Table 12. tDOL(on) Truth table Conditions Input Output Sense Normal operation L H L H H H Current limitation L H H L X X H (Tj < TTSD) H (Tj > TTSD) L Overtemperature L H L L H L Undervoltage L H L L X X Overvoltage L H L L H H Output voltage > VOL L H H H L H Output current < IOL L H L H H L Figure 5. 10/27 tSDL Switching time waveforms Doc ID 10882 Rev 4 VND830LSP-E Electrical specifications Table 13. Electrical transient requirements on VCC pin (part 1) Test levels ISO T/R 7637/1 test pulse I II III IV Delays and impedance 1 -25 V -50 V -75 V -100 V 2 ms, 10 Ω 2 +25 V +50 V +75 V +100 V 0.2 ms, 10 Ω 3a -25 V -50 V -100 V -150 V 0.1 µs, 50 Ω 3b +25 V +50 V +75 V +100 V 0.1 µs, 50 Ω 4 -4 V -5 V -6 V -7 V 100 ms, 0.01 Ω 5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2 Ω Table 14. Electrical transient requirements on VCC pin (part 2) Test levels results ISO T/R 7637/1 Test pulse I II III IV 1 C C C C 2 C C C C 3a C C C C 3b C C C C 4 C C C C 5 C E E E Table 15. Electrical transient requirements on VCC pin (part 3) Class Contents C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device. Doc ID 10882 Rev 4 11/27 Electrical specifications Figure 6. VND830LSP-E Waveforms NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn UNDERVOLTAGE VUSDhyst VCC VUSD INPUTn OUTPUT VOLTAGEn STATUS undefined OVERVOLTAGE VCC VOV VCC INPUTn OUTPUT VOLTAGEn STATUSn OPEN LOAD with external pull-up INPUTn VOUT > VOL OUTPUT VOLTAGEn VOL STATUSn OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn Tj TTSD TR OVERTEMPERATURE INPUTn OUTPUT CURRENTn STATUSn 12/27 Doc ID 10882 Rev 4 VND830LSP-E 2.4 Electrical specifications Electrical characteristics curves Figure 7. Off-state output current Figure 8. IL(off1) High level input current Iih (µA) 1.35 6 1.2 5.25 Off State Vcc=13V Vin=Vout=0V 1.05 Vin=3.25V 4.5 0.9 3.75 0.75 3 0.6 2.25 0.45 1.5 0.3 0.75 0.15 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (ºC) Figure 9. 50 75 100 125 150 175 125 150 175 125 150 175 Tc (ºC) Input clamp voltage Figure 10. Status leakage current Ilstat (µA) Vicl (V) 0.07 8 7.75 0.06 Iin=1mA Vstat=5V 7.5 0.05 7.25 0.04 7 0.03 6.75 0.02 6.5 0.01 6.25 0 6 -50 -25 0 25 50 75 100 125 150 -50 175 -25 0 25 Figure 11. 50 75 100 Tc (ºC) Tc (ºC) Status low output current Figure 12. Satus clamp voltage Vscl (V) Vstat (V) 8 0.8 7.75 0.7 Istat=1mA Istat=1.6mA 0.6 7.5 0.5 7.25 0.4 7 0.3 6.75 0.2 6.5 0.1 6.25 6 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 Tc (ºC) Tc (ºC) Doc ID 10882 Rev 4 13/27 Electrical specifications VND830LSP-E Figure 13. On-state resistance vs Tcase Figure 14. On-state resistance vs VCC Ron (mOhm) Ron (mOhm) 100 160 90 140 Iout=2A Vcc=13V 80 Iout=2A 120 70 100 60 Tc=150ºC 80 50 40 60 Tc=25ºC 30 40 Tc= -40ºC 20 20 10 0 0 -50 -25 0 25 50 75 100 125 150 0 175 5 10 15 20 25 30 35 40 Vcc (V) Tc (ºC) Figure 15. Open-load on-state detection threshold Iol (A) Figure 16. Open-load off-state detection threshold Vol (V) 2 5 4.5 1.75 Vin=0V Vin=5V 4 1.5 3.5 1.25 3 1 2.5 2 0.75 1.5 0.5 1 0.25 0.5 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (ºC) 50 75 100 125 150 175 100 125 150 175 Tc (ºC) Figure 17. Input high level Figure 18. Input low level Vil (V) Vih (V) 4 2.25 3.8 2.125 3.6 2 3.4 1.875 3.2 3 1.75 2.8 1.625 2.6 1.5 2.4 1.375 2.2 1.25 2 -50 -25 0 25 50 75 100 125 150 175 14/27 -50 -25 0 25 50 75 Tc (ºC) Tc (ºC) Doc ID 10882 Rev 4 VND830LSP-E Electrical specifications Figure 19. Input hysteresis voltage Figure 20. Overvoltage shutdown Vihyst (V) Vov 1.4 50 1.3 47.5 1.2 45 1.1 42.5 1 40 0.9 37.5 0.8 35 0.7 32.5 0.6 0.5 30 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (ºC) 100 125 150 175 150 175 Figure 22. Turn-off voltage slope dVout/dt(on) (V/ms) dVout/dt(off) (V/ms) 800 800 700 Vcc=13V Rl=6.5Ohm 600 75 Tc (ºC) Figure 21. Turn-on voltage slope 700 50 Vcc=13V Rl=6.5Ohm 600 500 500 400 400 300 300 200 200 100 100 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 Tc (ºC) -25 0 25 50 75 100 125 Tc (ºC) Figure 23. ILIM vs Tcase Ilim (A) 35 32.5 Vcc=13V 30 27.5 25 22.5 20 17.5 15 12.5 10 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) Doc ID 10882 Rev 4 15/27 Application information 3 VND830LSP-E Application information Figure 24. Application schematic +5V +5V +5V VCC Rprot STATUS1 Dld μC Rprot INPUT1 OUTPUT1 Rprot STATUS2 Rprot INPUT2 OUTPUT2 GND RGND VGND DGND 3.1 GND protection network against reverse battery 3.1.1 Solution 1: resistor in the ground line (RGND only) This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1. RGND ≤ 600 mV / IS(on)max 2. RGND ≥ (-VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device’s datasheet. Power dissipation in RGND (when VCC < 0: during reverse battery situations) is: PD = (-VCC)2/ RGND This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not shared by the device ground then the RGND produces a shift (IS(on)max * RGND) in the input thresholds and the status output 16/27 Doc ID 10882 Rev 4 VND830LSP-E Application information values. This shift varies depending on how many devices are ON in the case of several high-side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize solution 2 (see Section 3.1.2). 3.1.2 Solution 2: diode (DGND) in the ground line A resistor (RGND = 1 kΩ) should be inserted in parallel to DGND if the device drives an inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network produces a shift (∼600 mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground. This shift does not vary if more than one HSD shares the same diode/resistor network. Series resistor in INPUT and STATUS lines are also required to prevent that, during battery voltage transient, the current exceeds the absolute maximum rating. Safest configuration for unused INPUT and STATUS pin is to leave them unconnected. 3.2 Load dump protection Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the VCC max DC rating. The same applies if the device is subject to transients on the VCC line that are greater than the ones shown in Table 13. 3.3 MCU I/Os protection If a ground protection network is used and negative transient are present on the VCC line, the control pins are pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the microcontroller I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of microcontroller and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of microcontroller I/Os. -VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax Calculation example: For VCCpeak = -100 V and Ilatchup ≥ 20 mA; VOHµC ≥ 4.5 V 5 kΩ ≤ Rprot ≤ 65 kΩ. Recommended values: Rprot =10 kΩ. 3.4 Open-load detection in off-state Off-state open-load detection requires an external pull-up resistor (RPU) connected between OUTPUT pin and a positive supply voltage (VPU) like the +5 V line used to supply the microprocessor. Doc ID 10882 Rev 4 17/27 Application information VND830LSP-E The external resistor has to be selected according to the following requirements: 1. No false open-load indication when load is connected: in this case we have to avoid VOUT to be higher than VOlmin; this results in the following condition VOUT = (VPU/(RL + RPU))RL < VOlmin. 2. No misdetection when load is disconnected: in this case the VOUT has to be higher than VOLmax; this results in the following condition RPU < (VPU – VOLmax)/IL(off2). Because Is(OFF) may significantly increase if VOUT is pulled high (up to several mA), the pullup resistor RPU should be connected to a supply that is switched OFF when the module is in standby. The values of VOLmin, VOLmax and IL(off2) are available in Section 2.3: Electrical characteristics. Figure 25. Open-load detection in off-state V batt. VPU VCC RPU INPUT DRIVER + LOGIC IL(off2) OUT + R STATUS VOL GROUND 18/27 Doc ID 10882 Rev 4 RL VND830LSP-E 3.5 Application information PowerSO-10 maximum demagnetization energy (VCC = 13.5 V) Figure 26. Maximum turn- off current versus load inductance(1) I LM AX (A) 100 10 A C 1 0,01 0,1 1 10 B 100 L( mH) A: Single pulse at Tjstart = 150 °C B: Repetitive pulse at Tjstart = 100 °C C: Repetitive pulse at Tjstart = 125 °C Condition: VCC = 13.5 V VIN, IL Demagnetization Demagnetization Demagnetization t 1. Values are generated with RL = 0 Ω In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. Doc ID 10882 Rev 4 19/27 Package and PCB thermal data VND830LSP-E 4 Package and PCB thermal data 4.1 PowerSO-10 thermal data Figure 27. PowerSO-10 PC board(1) 1. Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB thickness = 2 mm, Cu thickness = 35 µm, Copper areas: from minimum pad lay-out to 8 cm2). Figure 28. Rthj-amb vs PCB copper area in open box free air condition RTHj_amb (°C/W) 55 Tj-Tamb=50°C 50 45 40 35 30 0 2 4 6 PCB Cu heatsink area (cm^2) 20/27 Doc ID 10882 Rev 4 8 10 VND830LSP-E Package and PCB thermal data Figure 29. PowerSO-10 thermal impedance junction ambient single pulse ZTH (°C/W) 1000 100 0.5 cm2 6 cm2 10 1 0.1 0.0001 0.001 0.01 0.1 1 Time (s) 10 100 1000 Equation 1: pulse calculation formula Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ ) where δ = tp ⁄ T Figure 30. Thermal fitting model of a double channel HSD in PowerSO-10 Tj_1 C1 C2 C3 C4 C5 C6 R1 R2 R3 R4 R5 R6 Pd1 Tj_2 C1 C2 R1 R2 Pd2 T_amb Doc ID 10882 Rev 4 21/27 Package and PCB thermal data Table 16. 22/27 VND830LSP-E Thermal parameter Area/island (cm2) Footprint R1 (°C/ W) 0.15 R2 (°C/ W) 0.8 R3 (°C/ W) 0.7 R4 (°C/ W) 0.8 R5 (°C/ W) 12 R6 (°C/ W) 37 C1 (W.s/ °C) 0.0006 C2 (W.s /°C) 2.1E-03 C3 (W.s/ °C) 0.013 C4 (W.s/ °C) 0.3 C5 (W.s/ °C) 0.75 C6 (W.s/ °C) 3 Doc ID 10882 Rev 4 6 22 5 VND830LSP-E Package and packing information 5 Package and packing information 5.1 ECOPACK® packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 5.2 PowerSO-10 mechanical data Figure 31. PowerSO-10 package dimensions B 0.10 A B 10 H E E E2 1 SEATING PLANE e B DETAIL "A" A C 0.25 h E4 D = D1 = = = SEATING PLANE A F A1 A1 L DETAIL "A" α Doc ID 10882 Rev 4 23/27 Package and packing information Table 17. VND830LSP-E PowerSO-10 mechanical data Millimeters Dim. Min. Max. A 3.35 3.65 A(1) 3.4 3.6 A1 0 0.10 B 0.40 0.60 B(1) 0.37 0.53 C 0.35 0.55 C(1) 0.23 0.32 D 9.40 9.60 D1 7.40 7.60 E 9.30 9.50 E2 7.20 7.60 E2(1) 7.30 7.50 E4 5.90 6.10 E4(1) 5.90 6.30 e 1.27 F 1.25 1.35 F(1) 1.20 1.40 H 13.80 14.40 H(1) 13.85 14.35 h 0.50 L 1.20 1.80 L(1) 0.80 1.10 α 0° 8° α(1) 2° 8° 1. Muar only POA P013P. 24/27 Typ. Doc ID 10882 Rev 4 VND830LSP-E 5.3 Package and packing information PowerSO-10 packing information Figure 32. PowerSO-10 suggested pad layout and tube shipment (no suffix) 14.6 - 14.9 B 10.8 - 11 C 6.30 A 0.67 - 0.73 1 9.5 2 3 4 5 10 9 8 7 6 0.54 - 0.6 All dimensions are in mm. 1.27 Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) Casablanca 50 1000 532 10.4 16.4 0.8 Muar 50 1000 532 4.9 17.2 0.8 Figure 33. Tape and reel shipment (suffix “TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 600 600 330 1.5 13 20.2 24.4 60 30.4 All dimensions are in mm. TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) 24 4 24 1.5 1.5 11.5 6.5 2 All dimensions are in mm. End Start Top No components Components No components cover tape 500mm min Empty components pockets saled with cover tape. 500mm min User direction of feed Doc ID 10882 Rev 4 25/27 Revision history 6 VND830LSP-E Revision history Table 18. 26/27 Document revision history Date Revision Changes 1-Oct-2004 1 Initial release. 19-Jul-2010 2 Changed Features list. Reformatted entire document. No content change. 25-Feb-2011 3 Updated IOUT value in Features list. Updated Table 16: Thermal parameter. 19-Sep-2013 4 Updated Disclaimer. Doc ID 10882 Rev 4 VND830LSP-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 10882 Rev 4 27/27
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