VND830TR-E

VND830-E DOUBLE CHANNEL HIGH SIDE DRIVER Table 1. General Features Type VND830-E Figure 1. Package RDS(on) Iout VCC 60mΩ (*) 6A (*) 36V ) s t( (*) Per each channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS ■ ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION ■ SHORTED LOAD PROTECTION ■ UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN ■ LOSS OF GROUND PROTECTION ■ VERY LOW STAND-BY CURRENT c u d ■ ■ REVERSE BATTERY PROTECTION (**) ■ IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE ■ ) s ( ct so e t le b O - DESCRIPTION The VND830-E is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active V CC pin voltage clamp protects the devices against low energy spikes (see ISO7637 transient compatibility table). u d o o r P SO-16L Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The device detects open load condition both is on and off state. Output shorted to VCC is detected in the off state. Device automatically turns off in case of ground pin disconnection. r P e t e l o s b O Table 2. Order Codes Package SO-16L Tube VND830-E Tape and Reel VND830TR-E Note: (*) See application schematic at page 9 Rev. 3 February 2005 1/20 VND830-E Figure 2. Block Diagram VCC VCC CLAMP OVERVOLTAGE UNDERVOLTAGE CLAMP 1 GND OUTPUT1 INPUT1 DRIVER 1 CLAMP 2 STATUS1 CURRENT LIMITER 1 ) s t( DRIVER 2 LOGIC OVERTEMP. 1 c u d OPENLOAD ON 1 CURRENT LIMITER 2 INPUT2 OPENLOAD OFF 1 OUTPUT2 o r P OPENLOAD ON 2 STATUS2 OPENLOAD OFF 2 e t le OVERTEMP. 2 O ) Table 3. Absolute Maximum Ratings Symbol VCC s ( t c DC Supply Voltage Value Unit 41 V - VCC Reverse DC Supply Voltage - 0.3 V - IGND DC Reverse Ground Pin Current - 200 mA Internally Limited A -6 A DC Input Current +/- 10 mA DC Status Current +/- 10 mA 4000 V 4000 V 5000 V 5000 V (L=1.8mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=9A) 102 mJ Power Dissipation Tlead=25°C 8.3 W Internally Limited °C IOUT - IOUT u d o ISTAT o s b VESD Pr DC Output Current Reverse DC Output Current e t e l IIN O Parameter o s b Electrostatic Discharge (Human R=1.5KΩ; C=100pF) Body Model: - INPUT - STATUS - OUTPUT - VCC Maximum Switching Energy EMAX Ptot Tj Junction Operating Temperature Tc Case Operating Temperature - 40 to 150 °C Storage Temperature - 55 to 150 °C Tstg 2/20 VND830-E Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins 1 VCC VCC 16 N.C. OUTPUT 1 GND OUTPUT 1 INPUT 1 OUTPUT 1 STATUS 1 OUTPUT 2 STATUS 2 OUTPUT 2 OUTPUT 2 INPUT 2 8 VCC Connection / Pin Status Floating X To Ground VCC 9 N.C. X X Output X Input X Through 10KΩ resistor c u d Figure 4. Current and Voltage Conventions IIN1 ISTAT1 VIN1 b O - VIN2 P e ct STATUS 2 VSTAT2 IS VF1 (*) VCC VCC IOUT1 VOUT1 INPUT 2 IOUT2 ISTAT2 du ro (s) IIN2 o r P OUTPUT 1 STATUS 1 VSTAT1 e t le so INPUT 1 ) s t( OUTPUT 2 VOUT2 GND IGND t e l o s b O (*) VFn = VCCn - VOUTn during reverse battery condition Table 4. Thermal Data Symbol Rthj-lead Rthj-amb Parameter Thermal resistance junction-lead Thermal resistance junction-ambient (MAX) (MAX) Value 15 65 (*) 48 (**) Unit °C/W °C/W Note: (*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal mounting and no artificial air flow. Note: (**) When mounted on a standard single-sided FR-4 board with 6 cm 2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal mounting and no artificial air flow. 3/20 VND830-E ELECTRICAL CHARACTERISTICS (8V TTSD) L Overtemperature L H L L H L Undervoltage L H L L X X Overvoltage L H L L H H Output Voltage > VOL L H H H Output Current < IOL L H L H ) s t( c u d e t le Figure 5. Switching time Waveforms o r P L H H L o s b O ) s ( t c VOUTn du e t e ol o r P 80% 90% dVOUT/dt(off) dVOUT/dt(on) s b O VINn 10% t td(on) td(off) t 6/20 VND830-E Table 13. Electrical Transient Requirements On V CC Pin ISO T/R 7637/1 Test Pulse I II TEST LEVELS III IV 1 2 3a 3b 4 5 -25 V +25 V -25 V +25 V -4 V +26.5 V -50 V +50 V -50 V +50 V -5 V +46.5 V -75 V +75 V -100 V +75 V -6 V +66.5 V -100 V +100 V -150 V +100 V -7 V +86.5 V ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 CLASS C E TEST LEVELS RESULTS II III C C C C C C C C C C E E I C C C C C C e t le Delays and Impedance 2 ms 10 Ω 0.2 ms 10 Ω 0.1 µs 50 Ω 0.1 µs 50 Ω 100 ms, 0.01 Ω 400 ms, 2 Ω ) s t( o r P c u d IV C C C C C E CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device. o s b O ) s ( t c u d o r P e t e l o s b O 7/20 VND830-E Figure 6. Waveforms NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn ) s t( UNDERVOLTAGE VUSDhyst VCC c u d VUSD INPUTn OUTPUT VOLTAGEn STATUSn undefined e t le OVERVOLTAGE o s b VCCVOL VOL OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj TTSD TR INPUTn OUTPUT CURRENTn STATUSn 8/20 o r P VND830-E Figure 7. Application Schematic +5V +5V +5V VCC Rprot STATUS1 Dld µC Rprot ) s t( INPUT1 OUTPUT1 Rprot STATUS2 Rprot INPUT2 c u d e t le so GND ) s ( ct r P e u d o GND PROTECTION REVERSE BATTERY t e l o NETWORK b O - RGND VGND AGAINST Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND ≤ 600mV / IS(on)max. 2) RGND ≥ (−VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the of the device’s datasheet. Power Dissipation in RGND (when VCC