VNS3NV04D-E

VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance (per ch.) RON 120m Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 ) s ( ct u d o ■ Linear current limitation ■ Thermal shut down ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ Esd protection ■ Direct access to the gate of the power mosfet (analog driving) ■ Compatible with standard power mosfet r P e t e l o Description ) (s t c u d o r P e The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. s b O Fault feedback can be detected by monitoring the voltage at the input pin. t e l o s b O Table 1. Device summary Package Tube Tape and Reel SO-8 VNS3NV04D-E VNS3NV04DTR-E September 2013 Rev 3 1/21 www.st.com 21 Contents VNS3NV04D-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 u d o Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4 3.1 Overvoltage clamp protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.2 Linear current limiter circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.3 Overtemperature and short circuit protection . . . . . . . . . . . . . . . . . . . . . . 16 3.4 Status feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 r P e t e l o s b O Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 ) (s 4.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.2 SO-8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.3 SO-8 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 t c u d o r 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 P e t e l o s b O 2/21 ) s ( ct VNS3NV04D-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Source Drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Protections (-40°C < Tj < 150°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . 9 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 3/21 List of figures VNS3NV04D-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Source-Drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Static Drain-Source On resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Static Drain-Source On resistance vs. Input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Static Drain-Source On resistance Vs. Input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Static Drain-Source On resistance Vs. Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn On current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn On current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Input voltage Vs. Input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn off Drain source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn off Drain-Source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Normalized On resistance Vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Normalized Input threshold voltage Vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Normalized current limit Vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 SO-8 Package mechanical data & package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 SO-8 Tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 SO-8 Tape and reel shipment (suffix “TR”). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 ) s ( ct u d o r P e t e l o ) (s t c u t e l o P e s b O 4/21 d o r s b O VNS3NV04D-E 1 Block diagram and pin description Block diagram and pin description Figure 1. Block diagram DRAIN2 DRAIN1 OVERVOLTAGE CLAMP OVERVOLTAGE CLAMP INPUT1 LINEAR CURRENT LIMITER OVER TEMPERATURE LINEAR CURRENT LIMITER SOURCE1 Figure 2. INPUT2 GATE CONTROL GATE CONTROL ) (s INPUT 1 SOURCE 2 INPUT 2 t c u 4 r P e t e l o s b O 1 u d o SOURCE2 Configuration diagram (top view) SOURCE 1 ) s ( ct OVER TEMPERATURE 8 DRAIN 1 DRAIN 1 DRAIN 2 5 DRAIN 2 d o r P e t e l o s b O 5/21 Electrical specifications 2 VNS3NV04D-E Electrical specifications Figure 3. Current and voltage conventions RIN1 IIN1 ID1 INPUT 1 IIN2 VIN1 DRAIN 1 RIN2 ID2 INPUT 2 VIN2 VDS1 DRAIN 2 SOURCE 1 VDS1 SOURCE 2 ) s ( ct u d o 2.1 r P e t e l o Absolute maximum ratings s b O Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to Absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE program and other relevant quality document. ) (s t c u d o r Table 2. Symbol Absolute maximum ratings P e Unit Drain-Source Voltage (VINn=0V) Internally clamped V VINn Input voltage Internally clamped V IINn Input current +/-20 mA 220  Internally limited A RIN MINn Minimum input series impedance IDn Drain current IRn Reverse DC output current -5.5 A VESD1 Electrostatic discharge (R=1.5K, C=100pF) 4000 V VESD2 Electrostatic discharge on output pins only (R=330, C=150pF) 16500 V 4  Ptot Total dissipation at Tc=25°C Tj Operating junction temperature Internally limited °C Tc Case operating temperature Internally limited °C -55 to 150 °C Tstg 6/21 Value VDSn t e l o s b O Parameter Storage temperature VNS3NV04D-E 2.2 Electrical specifications Thermal data Table 3. Thermal data Symbol Parameter Rthj-lead Thermal resistance junction-lead (per channel) Rthj-amb Thermal resistance junction-ambient Max value Unit 30 °C/W 80(1) °C/W 1. When mounted on a standard single-sided FR4 board with 50mm of Cu (at least 35 m thick) connected to all DRAIN pins of the relative channel 2 2.3 ) s ( ct Electrical characteristics Values specified in this section are for -40°C< Tj Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit. 16/21 VNS3NV04D-E Package and packing information 4 Package and packing information 4.1 ECOPACK® packages In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second-level interconnect. The category of Second-Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 17/21 Package and packing information 4.2 VNS3NV04D-E SO-8 Package mechanical data Figure 30. SO-8 Package mechanical data & package outline mm inch DIM. MIN. TYP. A MAX. MIN. TYP. 1.750 0.0689 0.250 0.0039 0.0098 A1 0.100 A2 1.250 0.0492 b 0.280 0.480 0.0110 0.0189 0.230 0.0067 0.0091 c 0.170 D (1) 4.800 4.900 5.000 0.1890 0.1929 0.1969 E 5.800 6.000 6.200 0.2283 0.2362 0.2441 3.800 3.900 4.000 0.1496 0.1535 0.1575 (2) E1 e 1.270 0.250 0.500 0.0098 0.0197 L 0.400 1.270 0.0157 0.0500 k 1.040 0˚ u d o r P e 0.0409 8˚ ccc ) s ( ct 0.0500 h L1 OUTLINE AND MECHANICAL DATA MAX. 0˚ 0.100 8˚ t e l o 0.0039 Notes: 1. Dimensions D does not include mold flash, protrusions or gate burrs. Mold flash, potrusions or gate burrs shall not exceed 0.15mm in total (both side). 2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25mm per side. bs SO-8 O ) s ( t c u d o r P e t e l o s b O 0016023 D 18/21 VNS3NV04D-E 4.3 Package and packing information SO-8 Packing information Figure 31. SO-8 Tube shipment (no suffix) B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) C A 100 2000 532 3.2 6 0.6 All dimensions are in mm. ) s ( ct Figure 32. SO-8 Tape and reel shipment (suffix “TR”) REEL DIMENSIONS u d o r P e t e l o )- s b O Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4 All dimensions are in mm. s ( t c TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 u d o Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing r P e s b O t e l o W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) 12 4 8 1.5 1.5 5.5 4.5 2 All dimensions are in mm. End Start Top cover tape No components Components No components 500mm min Empty components pockets saled with cover tape. 500mm min User direction of feed 19/21 Revision history 5 VNS3NV04D-E Revision history Table 10. Document revision history Date Revision Changes 28-Oct-2005 1 Initial release. 25-Jun-2007 2 Document reformatted and converted into new ST template. Table 4: Off - IDSS unit corrected 25-Sep-2013 3 Updated disclaimer. ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 20/21 s b O VNS3NV04D-E ) s ( ct Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. u d o r P e All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. t e l o No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. ) (s s b O UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. t c u ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. d o r P e t e l o s b O Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 21/21