IRFB9N60APBF-BE3

IRFB9N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D • Low gate charge Qg results in simple drive requirement TO-220AB • Improved gate, avalanche and dynamic dV/dt ruggedness G G D Available Available • Fully characterized capacitance and avalanche voltage and current S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S N-Channel MOSFET APPLICATIONS • Switch mode power supply (SMPS) PRODUCT SUMMARY VDS (V) • Uninterruptible power supply 600 RDS(on) (Ω) VGS = 10 V Qg max. (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • High speed power switching 0.75 APPLICABLE OFF LINE SMPS TOPOLOGIES • Active clamped forward • Main switch Single ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRFB9N60APbF Lead (Pb)-free and halogen-free IRFB9N60APbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 600 Gate-source voltage VGS ± 30 VGS at 10 V Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain currenta ID UNIT V 9.2 5.8 A IDM 37 1.3 W/°C Single pulse avalanche energy b EAS 290 mJ Repetitive avalanche current a IAR 9.2 A Repetitive avalanche energy a EAR 17 mJ PD 170 W dV/dt 5.0 V/ns TJ, Tstg -55 to +150 Linear derating factor Maximum power dissipation Peak diode recovery dV/dt TC = 25 °C c Operating junction and storage temperature range Soldering recommendations (peak temperature) d Mounting torque For 10 s 6-32 or M3 screw 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 6.8 mH, Rg = 25 Ω, IAS = 9.2 A (see fig. 12) c. ISD ≤ 9.2 A, dI/dt ≤ 50 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0867-Rev. E, 16-Aug-2021 Document Number: 91103 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB9N60A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - Maximum junction-to-case (drain) RthJC - 0.75 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage VDS VGS = 0 V, ID = 250 μA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 660 - mV/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 30 V - - ± 100 nA Zero gate voltage drain current IDSS VDS = 600 V, VGS = 0 V - - 25 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-source on-state resistance Forward transconductance μA - - 0.75 Ω gfs VDS = 50 V, ID = 5.5 A 5.5 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1400 - - 180 - - 7.1 - - 1957 - RDS(on) ID = 5.5 A b VGS = 10 V Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Output capacitance Coss Effective output capacitance Total gate charge Gate-source charge VDS = 1.0 V, f = 1.0 MHz VGS = 0 V Coss eff. VDS = 480 V, f = 1.0 MHz - 49 - VDS = 0 V to 480 V - 96 - - - 49 - - 13 Qg Qgs VGS = 10 V ID = 9.2 A, VDS = 400 V see fig. 6 and 13 b pF nC Gate-drain charge Qgd - - 20 Turn-on delay time td(on) - 13 - tr VDD = 300 V, ID = 9.2 A Rg = 9.1 Ω, RD = 35.5 Ω, see fig. 10 b - 25 - - 30 - - 22 - f = 1 MHz, open drain 0.5 - 3.2 - - 9.2 - - 37 - - 1.5 - 530 800 ns - 3.0 4.4 μC Rise time Turn-off delay time td(off) Fall time tf Gate input resistance Rg ns Ω Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Forward turn-on time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 9.2 A, VGS = 0 V b TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Coss effective is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS S21-0867-Rev. E, 16-Aug-2021 Document Number: 91103 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB9N60A www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 1 4.7V 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 TJ = 25 ° C 1 0.1 4.0 100 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) 10 4.7V 20µs PULSE WIDTH TJ = 150 ° C 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics S21-0867-Rev. E, 16-Aug-2021 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V 1 5.0 6.0 7.0 8.0 9.0 10.0 Fig. 3 - Typical Transfer Characteristics TOP 1 V DS = 50V 20µs PULSE WIDTH VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 100 TJ = 150 ° C ID = 9.2A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91103 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB9N60A www.vishay.com 10000 V GS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + C gd 1000 Ciss 100 ISD , Reverse Drain Current (A) C, Capacitance (pF) 100000 Vishay Siliconix Coss 100 10 Crss 1 10 TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.2 A 1 10 100 1000 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 1.0 1.2 Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 ID = 9.2A OPERATION IN THIS AREA LIMITED BY RDS(on) 400V VDS = 480V VDS = 300V VDS = 120V 16 100 ID , Drain Current (A) VGS , Gate-to-Source Voltage (V) 0.7 VSD ,Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) 20 V GS = 0 V 0.5 12 8 10us 10 100us 1ms 1 10ms 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 20 30 40 50 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area S21-0867-Rev. E, 16-Aug-2021 10000 Document Number: 91103 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB9N60A www.vishay.com Vishay Siliconix RD VDS 10.0 VGS D.U.T. RG + ID , Drain Current (A) 8.0 - VDD 10V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 6.0 Fig. 10a - Switching Time Test Circuit 4.0 VDS 90 % 2.0 0.0 25 50 75 100 125 150 10 % VGS TC , Case Temperature ( ° C) t d(on) tr t d(off) t f Fig. 10b - Switching Time Waveforms Fig. 9 - Maximum Drain Current vs. Case Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 t2 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.01 0.00001 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S21-0867-Rev. E, 16-Aug-2021 Document Number: 91103 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB9N60A www.vishay.com Vishay Siliconix V DS tp 15 V Driver L VDS D.U.T. RG + V - DD IAS 20 V tp A 0.01 W I AS Fig. 12b - Unclamped Inductive Waveforms EAS , Single Pulse Avalanche Energy (mJ) Fig. 12a - Unclamped Inductive Test Circuit 600 ID 4.1A 5.8A 9.2A TOP 500 BOTTOM 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. QG 50 kΩ 12 V 10 V 0.2 µF 0.3 µF QGS Q GD + D.U.T. VG - VDS VGS 3 mA Charge Fig. 13a - Basic Gate Charge Waveform S21-0867-Rev. E, 16-Aug-2021 IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91103 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB9N60A www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91103. S21-0867-Rev. E, 16-Aug-2021 Document Number: 91103 7 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) C b e J(1) e(1) MILLIMETERS DIM. INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 04-Nov-2021 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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