SI1079X-T1-GE3

Si1079X www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) MAX. ID (A) 0.100 at VGS = -4.5 V -1.44 0.112 at VGS = -3.7 V -1.36 0.140 at VGS = -2.5 V -1.22 Qg (TYP.) • Typical ESD performance 2500 V 8.1 nC D 6 • 100 % Rg tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SC-89 Single (6 leads) D 5 • TrenchFET® power MOSFET S 4 APPLICATIONS • Load switch for portable devices • Power management 1 D Top View 2 D S 3 G G Marking Code: C Ordering Information: Si1079X-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Maximum Power Dissipation TA = 25 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range UNIT V -1.44 b, c ID -1.15 b, c IDM -8 IS -0.28 b, c A 0.33 b, c PD W 0.21 b, c TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, b SYMBOL t≤5s Steady State RthJA TYPICAL MAXIMUM 300 375 360 450 UNIT °C/W Notes a. Maximum under steady state conditions is 450 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. S14-1436-Rev. A, 14-Jul-14 Document Number: 62966 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1079X www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -30 - - V Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a ID = -250 μA -21 - 3 - VDS = VGS, ID = -250 μA -0.6 - -1.5 VDS = 0 V, VGS = ± 12 V - - ± 10 VDS = 0 V, VGS = ± 4.5 V - - ±1 VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 85 °C - - -10 VDS = ≥ -5 V, VGS = -4.5 V -8 - - VGS = -4.5 V, ID = -1.4 A - 0.083 0.100 VGS = -3.7 V, ID = -1.3 A - 0.093 0.112 VGS = -2.5 V, ID = -0.7 A - 0.108 0.140 VDS = -15 V, ID = -1.4 A - 10 - - 750 - VDS = -15 V, VGS = 0 V, f = 1 MHz - 67 - - 60 - - 17 26 - 8.1 13 VDS = -15 V, VGS = -4.5 V, ID = -1.4 A - 1.2 - - 2.2 - f = 1 MHz 3.6 18 36 td(on) - 22 33 tr VDD = -15 V, RL = 13 Ω ID ≅ -1.15 A, VGEN = -4.5 V, Rg = 1 Ω - 33 50 - 58 87 tf - 30 45 td(on) - 5 10 RDS(on) Forward Transconductance - gfs mV/°C V μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) tr td(off) VDS = -15 V, VGS = -10 V, ID = -1.4 A VDD = -15 V, RL = 13 Ω ID ≅ -1.15 A, VGEN = -10 V, Rg = 1 Ω tf - 20 30 - 80 120 - 30 45 pF nC Ω ns Drain-Source Body Diode Characteristics Pulse Diode Forward Current a ISM Body Diode Voltage VSD IS = -1.15 A - - -8 A - -0.75 -1.2 V Body Diode Reverse Recovery Time trr - 16 24 ns Body Diode Reverse Recovery Charge Qrr - 7 14 nC Reverse Recovery Fall Time ta - 9 - Reverse Recovery Rise Time tb - 7 - IF = -1.15 A, dI/dt = 100 A/μs ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1436-Rev. A, 14-Jul-14 Document Number: 62966 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1079X www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10-4 0.05 TJ = 25 °C 10-5 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.04 0.03 0.02 TJ = 150 °C 10-6 10-7 TJ = 25 °C 10-8 0.01 10-9 0 0 4 8 12 16 0 4 8 12 16 VGS - Gate-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-to-Source Voltage 2 8 VGS = 5 V thru 3 V VGS = 2.5 V 1.5 ID - Drain Current (A) ID - Drain Current (A) 6 VGS = 2 V 4 2 1 TC = 25 °C 0.5 TC = 125 °C TC = - 55 °C VGS = 1.5 V 0 0 0.5 1 1.5 2 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Curves vs. Temperature 0.2 1200 0.15 900 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0 VGS = 2.5 V VGS = 3.7 V 0.1 VGS = 4.5 V Ciss 600 300 0.05 Coss Crss 0 0 0 2 4 ID - Drain Current (A) 6 On-Resistance vs. Drain Current S14-1436-Rev. A, 14-Jul-14 8 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62966 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1079X www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) VGS = 4.5 V; 1.4A/ VDS = 8 V ID = 1.4 A 8 VDS = 15 V 6 4 VDS = 24 V 2 0 1.4 VGS = 2.5 V; 0.7 A 1 0.6 0 5 10 15 Qg - Total Gate Charge (nC) 20 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 0.20 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 1.4 A TJ = 150 °C 1 TJ = 25 °C 0.1 TJ = 125 °C 0.10 TJ = 25 °C 0.05 0 0.0 0.3 0.6 0.9 1.2 0 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 12 ID = 250 μA 9 Power (W) 0.9 0.7 0.5 0.3 - 50 2 VSD - Source-to-Drain Voltage (V) 1.1 VGS(th) (V) 0.15 6 3 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient S14-1436-Rev. A, 14-Jul-14 100 Document Number: 62966 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1079X www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Limited by IDM 10 0.35 Limited by RDS(on)* 0.28 100 μs 1 ms Power (W) ID - Drain Current (A) 1 10 ms 0.1 100 ms 0.21 0.14 1s DC, 10s 0.01 0.07 TA = 25 °C BVDSS Limited 0.001 0 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Safe Operating Area, Junction-to-Ambient Power Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 450 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62966. S14-1436-Rev. A, 14-Jul-14 Document Number: 62966 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000