SI1902CDL-T1-BE3

Si1902CDL www.vishay.com Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES SC-70 (6 leads) SOT-363 Dual D1 6 • TrenchFET® power MOSFET S2 4 G2 5 • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S1 Top View 2 G1 APPLICATIONS 3 D2 • Load switch and DC/DC converter for portable devices • High speed switching Marking code: PE D2 D1 G1 G2 PRODUCT SUMMARY VDS (V) 20 RDS(on) max. () at VGS = 4.5 V 0.235 RDS(on) max. () at VGS = 2.5 V 0.306 Qg typ. (nC) ID (A) a Configuration S2 S1 N-Channel MOSFET 0.9 N-Channel MOSFET 1.1 Dual ORDERING INFORMATION Package SC-70 Lead (Pb)-free and halogen-free Si1902CDL-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 20 Gate-source voltage VGS ± 12 TC = 25 °C Continuous drain current (TJ = 150 °C) TC = 70 °C TA = 25 °C Continuous source-drain diode current 0.9 ID 1 b, c 0.8 b, c IDM TC = 25 °C TA = 25 °C Maximum power dissipation TA = 25 °C 0.35 IS 0.25 b, c 0.42 0.27 PD W 0.30 b, c 0.23 b, c TA = 70 °C Operating junction and storage temperature range A 2 TC = 25 °C TC = 70 °C V 1.1 TA = 70 °C Pulsed drain current (t = 300 μs) UNIT TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient b, d t5s RthJA 290 350 Maximum junction-to-foot (drain) Steady state RthJF 250 300 UNIT °C/W Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 410 °C/W S20-0818-Rev. C, 26-Oct-2020 Document Number: 67876 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1902CDL www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 20 - - - V 25 - - -2.6 - Static Drain-source breakdown voltage VDS/TJ VDS temperature coefficient VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 0.6 - 1.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 12 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance RDS(on) gfs VDS = 20 V, VGS = 0 V - - 1 VDS = 20 V, VGS = 0 V, TJ = 85 °C - - 10 VDS  5 V, VGS = 4.5 V 2 - - A  VGS = 4.5 V, ID = 1 A - 0.195 0.235 VGS = 2.5 V, ID = 0.3 A - 0.255 0.306 VDS = 10 V, ID = 1 A - 3 - - 62 - VDS = 10 V, VGS = 0 V, f = 1 MHz - 20 - - 7 - VDS = 10 V, VGS = 10 V, ID = 1 A - 2 3 - 0.9 1.4 VDS = 10 V, VGS = 4.5 V, ID = 1 A - 0.2 - - 0.2 - f = 1 MHz 2.4 12 24 - 4 8 μA ms Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD = 10 V, RL = 12.5  ID  0.8 A, VGEN = 10 V, Rg = 1  tf td(on) tr td(off) VDD = 10 V, RL = 12.5  ID  0.8 A, VGEN = 4.5 V, Rg = 1  tf - 13 20 - 11 20 - 9 18 - 6 12 - 16 24 - 13 20 - 10 20 pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD TC = 25 °C IS = 0.8 A - - 0.35 - - 2 - 0.8 1.2 V nC Body diode reverse recovery time trr - 2 4 Body diode reverse recovery charge Qrr - 8 16 Reverse recovery fall time ta - 5 - Reverse recovery rise time tb - 3 - IF = 0.8 A, di/dt = 100 A/μs A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2% b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0818-Rev. C, 26-Oct-2020 Document Number: 67876 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1902CDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 1.0 VGS = 5 V thru 2.5 V 0.8 ID - Drain Current (A) ID - Drain Current (A) 1.5 VGS = 2 V 1.0 0.6 0.4 TC = 25 °C 0.5 0.2 TC = 125 °C VGS = 1.5 V TC = - 55 °C 0 0 0 0.5 1.0 1.5 0 2.0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.40 80 Ciss 60 0.28 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.34 VGS = 2.5 V 0.22 VGS = 4.5 V 40 Coss 20 0.16 Crss 0.10 0 0.5 1 1.5 0 2 0 5 10 15 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.8 10 ID = 1 A RDS(on) - On-Resistance (Normalized) ID = 1 A VGS - Gate-to-Source Voltage (V) 20 VDS = 10 V 8 6 VDS = 5 V VDS = 16 V 4 2 0 0 0.5 1 1.5 Qg - Total Gate Charge (nC) Gate Charge S20-0818-Rev. C, 26-Oct-2020 2 VGS = 4.5 V 1.5 1.2 VGS = 2.5 V 0.9 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 67876 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1902CDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.5 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 1 A TJ = 150 °C 1 0.4 TJ = 125 °C 0.3 TJ = 25 °C 0.2 TJ = 25 °C 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.8 2.6 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 4.2 5 On-Resistance vs. Gate-to-Source Voltage 1.20 10 8 Power (W) 1.05 VGS(th) (V) 3.4 VGS - Gate-to-Source Voltage (V) ID = 250 μA 0.90 6 4 0.75 2 0.60 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 Time (s) 1 10 Single Pulse Power (Junction-to-Ambient) 10 ID - Drain Current (A) Limited by RDS(on)* 100 μs 1 1 ms 10 ms 0.1 100 ms TC = 25 °C Single Pulse 0.01 0.1 BVDSS Limited DC, 10s, 1s 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient S20-0818-Rev. C, 26-Oct-2020 Document Number: 67876 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1902CDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.2 ID - Drain Current (A) 0.9 0.6 0.3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a 0.4 0.5 0.4 0.3 Power (W) Power (W) 0.3 0.2 0.2 0.1 0.1 0.0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0818-Rev. C, 26-Oct-2020 Document Number: 67876 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1902CDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67876. S20-0818-Rev. C, 26-Oct-2020 Document Number: 67876 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000